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An atomic layer deposition apparatus and an atomic layer deposition method increase productivity. The atomic layer deposition apparatus includes a reaction chamber, a heater for supporting a plurality of semiconductor substrates with a given interval within the reaction chamber and to heat the plura

An atomic layer deposition apparatus and an atomic layer deposition method increase productivity. The atomic layer deposition apparatus includes a reaction chamber, a heater for supporting a plurality of semiconductor substrates with a given interval within the reaction chamber and to heat the plurality of semiconductor substrates and a plurality of injectors respectively positioned within the reaction chamber and corresponding to the plurality of semiconductor substrates supported by the heater. The plurality of injectors are individually swept above the plurality of semiconductor substrates to spray reaction gas.

대표청구항 ▼

1. An atomic layer deposition apparatus, comprising: a reaction chamber;a heater which supports a plurality of semiconductor substrates with a given interval within the reaction chamber and heats the plurality of semiconductor substrates;a plurality of injectors respectively positioned within the re

1. An atomic layer deposition apparatus, comprising: a reaction chamber;a heater which supports a plurality of semiconductor substrates with a given interval within the reaction chamber and heats the plurality of semiconductor substrates;a plurality of injectors respectively positioned within the reaction chamber and corresponding to the plurality of semiconductor substrates supported by the heater, the plurality of injectors being individually swept above the plurality of semiconductor substrates to spray reaction gas; anda plurality of vertical pipes formed inserted into the inside of the reaction chamber from the outside to connect in a vertical direction with the plurality of semiconductor substrates so as to fix the plurality of injectors in parallel with the plurality of semiconductor substrates at one side of the plurality of semiconductor substrates, the plurality of vertical pipes being for flowing the reaction gas into the plurality of injectors. 2. The apparatus of claim 1, wherein the plurality of injectors individually sweep above the plurality of semiconductor substrates by a rotation of the plurality of vertical pipes provided on both sides of the plurality of semiconductor substrates. 3. An atomic layer deposition apparatus comprising: a reaction chamber for providing a space independent of the outside;a slit valve through which a plurality of semiconductor substrates are inserted from one side of the reaction chamber;a heater supported by a support structure positioned adjacent to a sidewall of another side of the reaction chamber opposite to the slit valve and the heater supporting a plurality of semiconductor substrates with a given interval in a center part of the reaction chamber;a plurality of vertical pipes positioned adjacent to an edge of the plurality of semiconductor substrates supported by the heater and connected between the inside and outside of the reaction chamber in parallel with the support structure of the heater, the plurality of vertical pipes for providing a flowing reaction gas for reacting on the plurality of semiconductor substrates; anda plurality of injectors positioned within the reaction chamber and individually connected above the plurality of semiconductor substrates in the plurality of vertical pipes, the plurality of injectors for spraying the reaction gas flowing through the plurality of vertical pipes onto the plurality of semiconductor substrates, wherein the plurality of injectors being individually swept above the plurality of semiconductor substrates to spray reaction gas. 4. The apparatus of claim 3, further comprising an elevator for raising and lowering the heater. 5. The apparatus of claim 4, further comprising a bellows surrounding a periphery of the elevator inside the reaction chamber. 6. The apparatus of claim 3, wherein the heater comprises a plurality of flat plates having one side fixed by the support structure and wherein the plurality of flat plates support the plurality of semiconductor substrates. 7. The apparatus of claim 3, wherein the reaction chamber comprises a body having an internal space to load the plurality of semiconductor substrates, and a lid for covering an upper part of the body. 8. The apparatus of claim 7, comprising a plurality of rotary bodies fastened to the lid for rotating the plurality of vertical pipes in an azimuth angle. 9. The apparatus of claim 3, wherein the plurality of vertical pipes and injectors are formed in a comb shape and rotate passing between the plurality of semiconductor substrates supported with a given interval by the heater. 10. The apparatus of claim 9, wherein the plurality of injectors have a length of at least from an edge of the plurality of semiconductor substrates to a center of the plurality of semiconductor substrates. 11. The apparatus of claim 10, wherein the pluralities of injectors comprise a plurality of spray holes for individually discharging the reaction gas. 12. The apparatus of claim 3, wherein the plurality of injectors individually sweep above the plurality of semiconductor substrates by a rotation of the plurality of vertical pipes provided on both sides centering on the plurality of semiconductor substrates. 13. The apparatus of claim 3, wherein the plurality of vertical pipes and the plurality of injectors are positioned corresponding to a vertex of square with at least a similar side length as a diameter of the plurality of semiconductor substrates. 14. The apparatus of claim 13, wherein the plurality of vertical pipes and the plurality of injectors comprises a plurality of first vertical pipes and a plurality of first injectors opposed mutually in a first diagonal direction of the square centering on the plurality of semiconductor substrates, and a plurality of second vertical pipes and a plurality of second injectors opposed mutually in a second diagonal direction crossed with the first direction. 15. The apparatus of claim 14, wherein the plurality of first and second injectors are overlapped with one another in the center of respective semiconductor substrates.