Printable semiconductor structures and related methods of making and assembling
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/30
H01L-021/46
출원번호
US-0270954
(2011-10-11)
등록번호
US-8394706
(2013-03-12)
발명자
/ 주소
Nuzzo, Ralph G.
Rogers, John A.
Menard, Etienne
Lee, Keon Jae
Khang, Dahl-Young
Sun, Yugang
Meitl, Matthew
Zhu, Zhengtao
Ko, Heung Cho
Mack, Shawn
출원인 / 주소
The Board of Trustees of the University of Illinois
대리인 / 주소
Greenlee Sullivan P.C.
인용정보
피인용 횟수 :
111인용 특허 :
137
초록▼
The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high preci
The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.
대표청구항▼
1. A method for registered assembly of a plurality of printable semiconductor elements on a receiving surface of a substrate, said method comprising the steps of: providing a plurality of printable semiconductor structures having preselected spatial orientations relative to each other; wherein each
1. A method for registered assembly of a plurality of printable semiconductor elements on a receiving surface of a substrate, said method comprising the steps of: providing a plurality of printable semiconductor structures having preselected spatial orientations relative to each other; wherein each of said printable semiconductor structures comprises a printable semiconductor element, and a bridge element connected to said printable semiconductor element and connected to a mother wafer, wherein each of said printable semiconductor elements and said bridge elements are at least partially undercut from said mother wafer;contacting said printable semiconductor elements with a transfer device having a contact surface, wherein contact between said contact surface and said printable semiconductor elements binds at least a portion of said printable semiconductor elements to said contact surface of said transfer device;moving said transfer device in a manner resulting in the fracture of at least a portion of said bridge elements, thereby providing for registered transfer of at least a portion of said printable semiconductor elements from said mother wafer to said transfer device, thereby forming said contact surface having at least a portion of said printable semiconductor elements disposed thereon;contacting said receiving surface of said substrate with said printable semiconductor elements disposed on said contact surface; andseparating said contact surface of said transfer device and said printable semiconductor elements, wherein said printable semiconductor elements are transferred onto said receiving surface, thereby providing for registered assembly of said plurality of printable semiconductor elements on said receiving surface of said substrate. 2. The method of claim 1, wherein said relative spatial orientations of said printable semiconductor elements assembled on said receiving surface are maintained to within 5 microns. 3. The method of claim 1, wherein said relative spatial orientations of said printable semiconductor elements assembled on said receiving surface are maintained to within 0.1 microns. 4. The method of claim 1, wherein said printable semiconductor elements are assembled on to specific regions of said receiving substrate preselected to within 5 microns. 5. The method of claim 1, wherein said printable semiconductor elements are assembled on to specific regions of said receiving substrate preselected to within 500 nanometers. 6. The method of claim 1, wherein said steps of contacting said printable semiconductor elements with a transfer device, moving said transfer device, contacting said receiving surface of said substrate with said printable semiconductor elements disposed on said contact surface and separating said contact surface of said transfer device and said printable semiconductor elements are carried out using dry transfer printing. 7. The method of claim 1, wherein conformal contact is established between said contact surface having said printable semiconductor elements disposed thereon and said receiving surface of said substrate. 8. The method of claim 1, wherein said transfer device is a conformable transfer device. 9. The method of claim 1, wherein said bridge elements, said printable semiconductor elements and said mother wafer comprise a unitary structure. 10. The method of claim 1, wherein said bridge elements are connected to said printable semiconductor elements via an adhesive. 11. The method of claim 1, wherein said bridge elements are connected to said mother wafer via an adhesive. 12. The method of claim 1, wherein said bridge elements are connected to said printable semiconductor elements via an adhesive and wherein said bridge elements are connected to said mother wafer via an adhesive. 13. The method of claim 1, wherein a plurality of said bridge elements are connected to each of said printable semiconductor elements. 14. The method of claim 1, wherein each of said bridge elements has an average width selected from the range of 100 nanometers to 1000 microns, an average thickness selected from the range of 1 nanometers to 1000 microns and an average length selected from the range of 100 nanometers to 1000 microns. 15. The method of claim 1, wherein each of said bridge elements has an average width that is at least 2 times smaller than the average width of the printable semiconductor element to which it is connected. 16. The method of claim 1, wherein each of said bridge elements has an average width that is at least 10 times smaller than the average width of the printable semiconductor element to which it is connected. 17. The method of claim 1, wherein each of said bridge elements has an average thickness that is 1.5 times smaller than the average thickness of the printable semiconductor element to which it is connected. 18. The method of claim 1, wherein said printable semiconductor elements are functionalized to enhance said registered transfer to said transfer device. 19. The method of claim 1, wherein each of said printable semiconductor elements comprises a semiconductor ribbon extending a length along a principle longitudinal axis terminating in a first end and a second end, wherein said bridge element is connected to said first end and an additional bridge element is connected to said second end and to said mother wafer. 20. The method of claim 1 comprising a method of making an array of light emitting diodes or an array of solar cells. 21. The method of claim 1 comprising a method of making an array of diodes, an array of transistors or an integrated electronic circuit. 22. The method of claim 8, wherein said transfer device is an elastomeric stamp. 23. The method of claim 8, wherein said transfer device is a PDMS stamp. 24. The method of claim 18, wherein hydrophilic groups are added to the surfaces of the printable semiconductor elements or wherein the surfaces of the printable semiconductor elements are coated with a metal to enhance bonding to the contact surface of said transfer device.
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Mickelsen Reid A. (Bellevue WA) Chen Wen S. (Seattle WA), Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI2.
Amundson,Karl R.; Chen,Yu; Denis,Kevin L.; Drzaic,Paul S.; Kazlas,Peter T.; Ritenour,Andrew P., Backplanes for display applications, and components for use therein.
Abramson, Justin; Amundson, Karl R.; Danner, Guy M.; Duthaler, Gregg M.; Gates, Holly G.; Honeyman, Charles H.; Knaian, Ara N.; Morrison, Ian D.; O'Neil, Steven J.; Paolini, Jr., Richard J.; Pullen, , Electro-optic displays, and methods for driving same.
Credelle, Thomas Lloyd; Gengel, Glenn; Stewart, Roger Green; Joseph, William Hill, Electronic devices with small functional elements supported on a carrier.
James Gregory Bentsen ; Rolf Werner Biernath, Film based addressable programmable electronic matrix articles and methods of manufacturing and using the same.
Gazdik Charles E. (Endicott NY) McBride Donald G. (Binghamton NY) Seraphim Donald P. (Vestal NY) Toole Patrick A. (Westport CT), Full panel electronic packaging structure and method of making same.
Tachibana,Takeshi; Hayashi,Kazushi; Inoue,Kenichi; Yokota,Yoshihiro; Kobashi,Koji; Kawakami,Nobuyuki; Kobori,Takashi, Heat spreader and semiconductor device and package using the same.
Bassous Ernest (Riverdale NY) Kuhn Lawrence (Ossining NY) Taub Howard H. (Mount Kisco NY), Jet nozzle structure for electrohydrodynamic droplet formation and ink jet printing system therewith.
Chan Kevin Kok ; D'Emic Christopher Peter ; Jones Erin Catherine ; Solomon Paul Michael ; Tiwari Sandip, Method for making bonded metal back-plane substrates.
Cann Gordon L. (Laguna Beach) Shephard ; Jr. Cecil B. (Laguna Beach) McKevitt Frank X. (Anaheim Hills CA), Method for plasma deposition on apertured substrates.
Smith, John Stephen; Hadley, Mark A.; Craig, Gordon S. W.; Nealey, Paul F., Methods and apparatuses for improved flow in performing fluidic self assembly.
John Stephen Smith ; Mark A. Hadley ; Gordon S. W. Craig ; Frank Lowe, Methods for forming openings in a substrate and apparatuses with these openings and methods for creating assemblies with openings.
Bakhit Gabriel G. (Huntington Beach CA) Pillai Vincent A. (Irvine CA) Averkiou George (Upland CA) Trask Philip A. (Laguna Hills CA), Methods of forming two-sided HDMI interconnect structures.
William A. Clark ; Mark A. Lemkin ; Thor N. Juneau ; Allen W. Roessig, Microfabricated structures with trench-isolation using bonded-substrates and cavities.
Kang Sung-gyu,KRX ; Lee Ki Bang,KRX ; Choi Jae-joon,KRX ; Jeong Hee-moon,KRX, Multilayered wafer with thick sacrificial layer using porous silicon or porous silicon oxide and fabrication method thereof.
Scher, Erik; Buretea, Mihai A.; Chow, Calvin; Empedocles, Stephen; Meisel, Andreas; Parce, J. Wallace, Nanostructure and nanocomposite based compositions and photovoltaic devices.
Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao, Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp.
Gregg Duthaler ; Karl R. Amundson ; Paul S. Drzaic ; Peter T. Kazlas ; Jianna Wang, Preferred methods for producing electrical circuit elements used to control an electronic display.
Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn, Printable semiconductor structures and related methods of making and assembling.
Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn, Printable semiconductor structures and related methods of making and assembling.
Hara Kazukuni,JPX ; Tokura Norihito,JPX ; Miyajima Takeshi,JPX ; Fuma Hiroo,JPX ; Kano Hiroyuki,JPX, Process for producing a semiconductor device having a single thermal oxidizing step.
Rogers, John A.; Nuzzo, Ralph G.; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J., Release strategies for making transferable semiconductor structures, devices and device components.
Cole ; Jr. Herbert S. (Burnt Hills NY) Sitnik-Nieters Theresa A. (Scotia NY) Wojnarowski Robert J. (Ballston Lake NY) Lupinski John H. (Vienna VA), Reworkable high density interconnect structure incorporating a release layer.
Chen, Shiuh-Hui Steven; Garza, Raymond; Ross, Carl; Turalski, Stefan, Semiconductor wafer having a thin die and tethers and methods of making the same.
Salerno Jack P. ; Zavracky Paul M. ; Spitzer Mark B. ; Dingle Brenda, Single crystal silicon arrayed devices with optical shield between transistor and substrate.
Chang Mike F. ; Owyang King ; Hshieh Fwu-Iuan ; Ho Yueh-Se ; Dun Jowei ; Fusser Hans-Jurgen,DEX ; Zachai Reinhard,DEX, Surface mount and flip chip technology with diamond film passivation for total integated circuit isolation.
Beyer Klaus D. (Poughkeepsie NY) Hsieh Chang-Ming (Fishkill NY) Hsu Louis L. (Fishkill NY) Kotecki David E. (Hopewell Junction NY) Yuan Tsoring-Dih (Hopewell Junction NY), Thermal dissipation of integrated circuits using diamond paths.
Ikemizu,Dai; Kataoka,Emiko; Suzuki,Takatugu; Yoshida,Kazuya; Yamashita,Hiroyuki, Thermal transfer recording material and thermal transfer recording method.
Suzuki,Taro; Fukui,Daisuke; Fujita,Masahiro, Thermally transferable image protective sheet, method for protective layer formation, and record produced by said method.
Hadley, Mark A.; Chiang, Ann; Craig, Gordon S. W.; Jacobsen, Jeffrey Jay; Smith, John Stephen; Tu, Jay; Stewart, Roger Green, Web fabrication of devices.
Jeffrey Jay Jacobsen ; Glenn Wilhelm Gengel ; Mark A. Hadley ; Gordon S. W. Craig ; John Stephen Smith, Web process interconnect in electronic assemblies.
Ghaffari, Roozbeh; Lee, Stephen; Work, John; Wright, Jr., John A.; Klinker, Lauren, Catheter or guidewire device including flow sensing and use thereof.
Ghaffari, Roozbeh; Lee, Stephen; Work, John; Wright, Jr., John A.; Klinker, Lauren, Catheter or guidewire device including flow sensing and use thereof.
Ghaffari, Roozbeh; Lee, Stephen; Work, John; Wright, Jr., John A.; Klinker, Lauren, Catheter or guidewire device including flow sensing and use thereof.
Rogers, John A.; Lee, Chi Hwan; Yin, Lan; Huang, Xian; Leal, Cecilia Maria das Neves Barbosa; Harburg, Daniel Vincent, Materials, electronic systems and modes for active and passive transience.
Bower, Christopher Andrew; Cok, Ronald S.; Meitl, Matthew; Prevatte, Jr., Carl Ray, Pressure-activated electrical interconnection by micro-transfer printing.
Bower, Christopher Andrew; Cok, Ronald S.; Meitl, Matthew; Prevatte, Jr., Carl Ray, Pressure-activated electrical interconnection by micro-transfer printing.
Rogers, John A.; Nuzzo, Ralph; Kim, Hoon-sik; Brueckner, Eric; Park, Sang Il; Kim, Rak Hwan, Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays.
Rogers, John A.; Wilson, William L.; Jin, Sung Hun; Dunham, Simon N.; Xie, Xu; Islam, Ahmad; Du, Frank; Huang, Yonggang; Song, Jizhou, Purification of carbon nanotubes via selective heating.
Rogers, John A.; Nuzzo, Ralph G.; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J., Release strategies for making transferable semiconductor structures, devices and device components.
Rogers, John A.; Fan, Jonathan; Yeo, Woon-Hong; Su, Yewang; Huang, Yonggang; Zhang, Yihui, Self-similar and fractal design for stretchable electronics.
Rogers, John A.; Fan, Jonathan; Yeo, Woon-Hong; Su, Yewang; Huang, Yonggang; Zhang, Yihui, Self-similar and fractal design for stretchable electronics.
Rogers, John A.; Khang, Dahl-Young; Sun, Yugang; Menard, Etienne, Stretchable form of single crystal silicon for high performance electronics on rubber substrates.
Rogers, John A.; Khang, Dahl-Young; Sun, Yugang; Menard, Etienne, Stretchable form of single crystal silicon for high performance electronics on rubber substrates.
Rogers, John A.; Khang, Dahl-Young; Sun, Yugang; Menard, Etienne, Stretchable form of single crystal silicon for high performance electronics on rubber substrates.
de Graff, Bassel; Ghaffari, Roozbeh; Arora, William J., Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy.
Ghaffari, Roozbeh; de Graff, Bassel; Callsen, Gilman; Arora, William J.; Schlatka, Benjamin; Kuznetsov, Eugene, Systems, methods, and devices using stretchable or flexible electronics for medical applications.
Ghaffari, Roozbeh; de Graff, Bassel; Callsen, Gilman; Arora, William J.; Schlatka, Benjamin; Kuznetsov, Eugene, Systems, methods, and devices using stretchable or flexible electronics for medical applications.
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