IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0530383
(2012-06-22)
|
등록번호 |
US-8395261
(2013-03-12)
|
우선권정보 |
JP-2007-038912 (2007-02-20); JP-2007-337436 (2007-12-27) |
발명자
/ 주소 |
- Tanaka, Takekazu
- Takahashi, Kouhei
- Okabe, Seiji
|
출원인 / 주소 |
- Renesas Electronics Corporation
|
대리인 / 주소 |
McGinn IP Law Group, PLLC
|
인용정보 |
피인용 횟수 :
3 인용 특허 :
3 |
초록
▼
A semiconductor device includes an electrode pad provided on a semiconductor chip, the electrode pad includes aluminum (Al) of between 50% wt. and 99.9% wt. and further includes copper (Cu), a coupling ball that primarily includes Cu, the coupling ball being coupled to the electrode pad so that a Cu
A semiconductor device includes an electrode pad provided on a semiconductor chip, the electrode pad includes aluminum (Al) of between 50% wt. and 99.9% wt. and further includes copper (Cu), a coupling ball that primarily includes Cu, the coupling ball being coupled to the electrode pad so that a CuAl2 layer, a CuAl layer, a layer including one of Cu9Al4 and Cu3Al2, and the coupling ball are vertically stacked in this order on the electrode pad, and an encapsulating resin that includes a halogen of less than or equal to 1000 ppm, the encapsulating resin covering at least the electrode pad and a junction between the electrode pad and the coupling ball.
대표청구항
▼
1. A semiconductor device, comprising: an electrode pad provided on a semiconductor chip, the electrode pad comprising aluminum (Al) of between 50% wt. and 99.9% wt. and further comprising copper (Cu);a coupling ball primarily comprising Cu, the coupling ball being coupled to the electrode pad so th
1. A semiconductor device, comprising: an electrode pad provided on a semiconductor chip, the electrode pad comprising aluminum (Al) of between 50% wt. and 99.9% wt. and further comprising copper (Cu);a coupling ball primarily comprising Cu, the coupling ball being coupled to the electrode pad so that a CuAl2 layer, a CuAl layer, a layer including one of Cu9Al4 and Cu3Al2, and the coupling ball are vertically stacked in this order on the electrode pad; andan encapsulating resin comprising a halogen of less than or equal to 1000 ppm, the encapsulating resin covering at least the electrode pad and a junction between the electrode pad and the coupling ball. 2. The semiconductor device according to claim 1, wherein the encapsulating resin substantially includes no antimony. 3. The semiconductor device according to claim 1, wherein the coupling ball is configured to form a distal end of a bonding wire. 4. The semiconductor device according to claim 1, wherein a content ratio of the Cu in the electrode pad is between 0.1% wt. and 5.0% wt. 5. The semiconductor device according to claim 1, wherein the electrode pad further comprises Si. 6. The semiconductor device according to claim 1, wherein the coupling ball further comprises P. 7. The semiconductor device according to claim 1, wherein the encapsulating resin comprises at least one of a metal hydrate, a spherical silica, a phenolic resin, and an epoxy resin. 8. The semiconductor device according to claim 7, wherein the metal hydrate comprises at least one of an aluminum hydroxide and a magnesium hydroxide. 9. The semiconductor device according to claim 7, wherein the phenolic resin comprises at least one of a phenolic biphenylene aralkyl resin, a phenolic phenylene aralkyl resin, a phenolic diphenyl ether aralkyl resin, a bisphenol fluorene-containing phenolic novolac resin, a bisphenol S-containing phenolic novolac resin, a bisphenol-F containing phenolic novolac resin, a bisphenol-A containing phenolic novolac resin, a naphthalene-containing phenolic novolac resin, an anthracene-containing phenolic novolac resin, a fluorene-containing phenolic novolac resin, and a condensed polycyclic aromatic phenolic resin. 10. The semiconductor device according to claim 7, wherein the epoxy resin comprises at least one of a phenolic biphenylene aralkyl epoxy resin, a phenolic phenylene aralkyl epoxy resin, a phenolic diphenyl ether aralkyl epoxy resin, a bisphenol fluorene-containing novolac epoxy resin, a bisphenol-S-containing novolac epoxy resin, a bisphenol-F-containing novolac epoxy resin, a bisphenol-A-containing novolac epoxy resin, a naphthalene-containing novolac epoxy resin, an anthracene-containing novolac epoxy resin, a fluorene-containing novolac epoxy resin, and a condensed polycyclic aromatic epoxy resin. 11. The semiconductor device according to claim 1, wherein a thickness of the electrode pad at the junction between the electrode pad and the coupling hall is equal to or larger than ¼ of a thickness of the electrode pad in a region peripheral to the junction between the electrode pad and the coupling ball. 12. The semiconductor device according to claim 1, wherein the encapsulating resin further covers the semiconductor chip and the coupling ball. 13. The semiconductor device according to claim 12, further comprising: a die pad carrying the semiconductor chip thereon; andan outer terminal coupled to the coupling ball.
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