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Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H04B-001/28
  • H01L-029/76
  • H01L-007/20
  • H04M-001/00
출원번호 US-0412529 (2012-03-05)
등록번호 US-8405147 (2013-03-26)
발명자 / 주소
  • Brindle, Christopher N.
  • Stuber, Michael A.
  • Kelly, Dylan J.
  • Kemerling, Clint L.
  • Imthurn, George P.
  • Welstand, Robert B.
  • Burgener, Mark L.
출원인 / 주소
  • Peregrine Semiconductor Corporation
대리인 / 주소
    Jaquez & Associates
인용정보 피인용 횟수 : 22  인용 특허 : 257

초록

A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET perfo

대표청구항

1. An RF switch, comprising: a first RF port;a second RF port;a first switch transistor grouping coupled with the first and second RF ports, and controlled by a first switch control signal, the first switch transistor grouping comprising a first plurality of switch NMOSFETs arranged in a stacked con

이 특허에 인용된 특허 (257)

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