초록 ▼

Methods of forming a capping layer on conductive lines in a semiconductor device may be characterized by the following operations: (a) providing a semiconductor substrate comprising a dielectric layer having (i) exposed conductive lines (e.g., copper lines) disposed therein, and (ii) an exposed barr

Methods of forming a capping layer on conductive lines in a semiconductor device may be characterized by the following operations: (a) providing a semiconductor substrate comprising a dielectric layer having (i) exposed conductive lines (e.g., copper lines) disposed therein, and (ii) an exposed barrier layer disposed thereon; and (b) depositing a capping layer material on at least the exposed conductive lines of the semiconductor substrate. In certain embodiments, the method may also involve removing at least a portion of a conductive layer (e.g., overburden) disposed over the barrier layer and conductive lines to expose the barrier layer.

대표청구항 ▼

1. An apparatus for forming a capping layer on interconnect conductive lines in a semiconductor device, the apparatus comprising: (a) a first planarization module configured to remove a portion of an interconnect overburden from a semiconductor substrate to expose a diffusion barrier layer on a diel

1. An apparatus for forming a capping layer on interconnect conductive lines in a semiconductor device, the apparatus comprising: (a) a first planarization module configured to remove a portion of an interconnect overburden from a semiconductor substrate to expose a diffusion barrier layer on a dielectric field;(b) a wet etching module configured for forming recesses in the interconnect conductive lines without removing the diffusion barrier layer;(c) a capping layer material deposition module for depositing said capping layer material on at least the exposed recessed conductive lines produced by the wet etching module. 2. The apparatus of claim 1, further comprising: (d) a second polishing or planarization module configured to remove at least excess capping layer material deposited by the capping layer deposition module. 3. The apparatus of claim 1, wherein the first planarization module is a chemical mechanical polishing module. 4. The apparatus of claim 1, wherein the capping layer material deposition module is an electroless deposition module configured for selective electroless deposition of the capping layer onto the interconnect conductive lines. 5. The apparatus of claim 1, wherein the capping layer material deposition module is an electrolytic deposition module configured for selective electrolytic deposition of the capping layer onto the interconnect conductive lines. 6. The apparatus of claim 1 wherein at least the first planarization module and the wet etching module are integrated in one tool.