IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0792177
(2010-06-02)
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등록번호 |
US-8416400
(2013-04-09)
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발명자
/ 주소 |
- Cui, Xiquan
- Yang, Changhuei
|
출원인 / 주소 |
- California Institute of Technology
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
5 인용 특허 :
37 |
초록
▼
Embodiments of the present invention relate to a wavefront imaging sensor (WIS) comprising an aperture layer having an aperture, a light detector having a surface and a transparent layer between the aperture layer and the light detector. The light detector can receive a light projection at the surfa
Embodiments of the present invention relate to a wavefront imaging sensor (WIS) comprising an aperture layer having an aperture, a light detector having a surface and a transparent layer between the aperture layer and the light detector. The light detector can receive a light projection at the surface from light passing through the aperture. The light detector can also separately measure amplitude and phase information of a wavefront at the aperture based on the received light projection. The transparent layer has a thickness designed to locate the surface of the light detector approximately at a self-focusing plane in a high Fresnel number regime to narrow the light projection.
대표청구항
▼
1. A wavefront imaging sensor comprising, an aperture layer having an aperture of set dimensions;a light detector having a surface, the light detector configured to receive a light projection at the surface from light passing through the aperture, the light detector further configured to separately
1. A wavefront imaging sensor comprising, an aperture layer having an aperture of set dimensions;a light detector having a surface, the light detector configured to receive a light projection at the surface from light passing through the aperture, the light detector further configured to separately measure amplitude and phase information of a wavefront based on the received light projection; anda transparent layer between the aperture layer and the light detector, the transparent layer having a thickness locating the surface of the light detector approximately at a self-focusing plane in a high Fresnel number regime to narrow the light projection. 2. The wavefront imaging sensor of claim 1, wherein the light detector measures the phase information of the wavefront at the aperture by estimating a lateral shift of the light projection and determining the phase information based on the estimated lateral shift. 3. The wavefront imaging sensor of claim 2, wherein the light detector comprises a plurality of light detecting elements, each light detecting element receiving a signal, andwherein the light detector estimates a lateral shift of the light projection by estimating a center of the projection on the surface of the light detector. 4. The wavefront imaging sensor of claim 2, wherein the light detector is configured to measure the phase information of the wavefront at one of the apertures by estimating a lateral shift of the light projection corresponding to the one of the apertures. 5. The wavefront imaging sensor of claim 1, wherein the light detector measures the amplitude information of the wavefront at the aperture by summing up the intensity signals over the light projection. 6. The wavefront imaging sensor of claim 1, wherein the light detector comprises a plurality of light detecting elements, each light detecting element receiving a signal, andwherein the light detector measures the amplitude information of the wavefront at the aperture by summing up the signals received by the light detecting elements. 7. The wavefront imaging sensor of claim 1, further comprising a processor communicatively coupled to the light detector, the processor configured to generate a phase image based on the measured phase information of the wavefront along a user defined direction. 8. The wavefront imaging sensor of claim 1, further comprising a processor communicatively coupled to the light detector, the processor configured to generate a phase image based on the measured phase information of the wavefront along an axis of the aperture layer. 9. The wavefront imaging sensor of claim 1, further comprising a processor communicatively coupled to the light detector, the processor configured to generate a phase image based on a magnitude of the phase gradient vector of the wavefront determined from the measured phase information of the wavefront. 10. The wavefront imaging sensor of claim 1, further comprising a lens at the aperture. 11. The wavefront imaging sensor of claim 1, wherein the light projection is a minimum light projection associated with the self-focusing plane. 12. The wavefront imaging sensor of claim 1, wherein the transparent layer extends from the aperture layer to the surface of the light detector. 13. The wavefront imaging sensor of claim 1, wherein the wavefront imaging sensor is in the form of a wavefront imaging sensor chip. 14. A wavefront imaging sensor comprising, an aperture layer having an array of apertures of set dimensions;a light detector having a surface, the light detector configured to receive one or more light projections at the surface from light passing through the array of apertures, the light detector further configured to separately measure amplitude and phase information of a wavefront based on the received one or more light projections; anda transparent layer between the aperture layer and the light detector, the transparent layer having a thickness locating the surface of the light detector approximately at a self-focusing plane in a high Fresnel number regime to narrow the one or more light projections. 15. The wavefront imaging sensor of claim 14, wherein the apertures in the array of apertures are closely spaced. 16. The wavefront imaging sensor of claim 14, wherein the light detector includes a plurality of arrays of light detecting elements, wherein each array of light detecting elements is assigned to an aperture. 17. The wavefront imaging sensor of claim 14, wherein the light detector measures the amplitude information of the wavefront at one of the apertures by summing up the intensity signals received by the array of light detecting elements assigned to the one of the apertures. 18. The wavefront imaging sensor of claim 14, wherein the transparent layer extends from the aperture layer to the surface of the light detector. 19. A method for separately measuring the amplitude and phase gradient of a wavefront using a wavefront imaging sensor having an aperture layer, a light detector and a transparent layer between the aperture layer and the light detector, the method comprising: receiving a light projection at a surface of the light detector, the light projection from light passing through an aperture of the aperture layer, wherein the aperture has set dimensions, and wherein the surface is located approximately at a self-focusing plane in a high Fresnel number regime to narrow the light projection;estimating a lateral shift of the light projection by estimating a center of the light projection on the surface;measuring the phase gradient of the wavefront at the aperture using the estimated lateral shift of the light projection; andmeasuring the amplitude of the wavefront at the aperture by summing up intensity signals received by the light detecting elements assigned to the aperture. 20. The method of claim 19, wherein the transparent layer extends from the aperture layer to the surface of the light detector.
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