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Enhanced diffusion barrier for interconnect structures

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/4763
출원번호 US-0164929 (2011-06-21)
등록번호 US-8420531 (2013-04-16)
발명자 / 주소
  • Yang, Chih-Chao
  • Edelstein, Daniel C.
  • Molis, Steven E.
출원인 / 주소
  • International Business Machines Corporation
대리인 / 주소
    Scully, Scott, Murphy & Presser, P.C.
인용정보 피인용 횟수 : 19  인용 특허 : 61

초록

Alternative methods of fabricating an interconnect structure in which an enhanced diffusion barrier including an in-situ formed metal nitride liner formed between an interconnect dielectric material and an overlying metal diffusion barrier liner are provided. In one embodiment, the method includes f

대표청구항

1. A method of forming an interconnect structure, said method comprising: forming at least one opening into an interconnect dielectric material;forming a nitrogen enriched dielectric surface layer within exposed surfaces of said interconnect dielectric material, wherein said nitrogen enriched dielec

이 특허에 인용된 특허 (61)

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이 특허를 인용한 특허 (19)

  1. Edelstein, Daniel C; Yang, Chih-Chao, Advanced through substrate via metallization in three dimensional semiconductor integration.
  2. Edelstein, Daniel C; Yang, Chih-Chao, Formation of liner and metal conductor.
  3. Yang, Chih-Chao; Edelstein, Daniel C., High-nitrogen content metal resistor and method of forming same.
  4. Edelstein, Daniel C.; Yang, Chih-Chao, Metal resistors having nitridized dielectric surface layers and nitridized metal surface layers.
  5. Edelstein, Daniel C.; Yang, Chih-Chao, Metal resistors having nitridized metal surface layers with different nitrogen content.
  6. Edelstein, Daniel C.; Yang, Chih-Chao, Metal resistors having nitridized metal surface layers with different nitrogen content.
  7. Edelstein, Daniel C.; Yang, Chih-Chao, Metal resistors having varying resistivity.
  8. Edelstein, Daniel C.; Yang, Chih-Chao, Metal resistors having varying resistivity.
  9. Spooner, Terry A.; Wang, Wei; Yang, Chih-chao, Multiple pre-clean processes for interconnect fabrication.
  10. Briggs, Benjamin D.; Clevenger, Lawrence A.; Rizzolo, Michael; Yang, Chih-Chao, Neutral atom beam nitridation for copper interconnect.
  11. Briggs, Benjamin D.; Clevenger, Lawrence A.; Rizzolo, Michael; Yang, Chih-Chao, Neutral atom beam nitridation for copper interconnect.
  12. Clevenger, Lawrence A.; Quon, Roger A.; Shobha, Hosadurga K.; Spooner, Terry A.; Wang, Wei; Yang, Chi-Chao, Nitridization for semiconductor structures.
  13. Clevenger, Lawrence A.; Quon, Roger A.; Shobha, Hosadurga K.; Spooner, Terry A.; Wang, Wei; Yang, Chih-Chao, Nitridization for semiconductor structures.
  14. Edelstein, Daniel C.; Yang, Chih-Chao, Simultaneous formation of liner and metal conductor.
  15. Edelstein, Daniel C; Yang, Chih-Chao, Simultaneous formation of liner and metal conductor.
  16. Edelstein, Daniel C; Yang, Chih-Chao, Simultaneous formation of liner and metal conductor.
  17. Edelstein, Daniel C; Yang, Chih-Chao, Simultaneous formation of liner and metal conductor.
  18. Edelstein, Daniel C; Yang, Chih-Chao, Simultaneous formation of liner and metal conductor.
  19. Edelstein, Daniel C; Yang, Chih-Chao, Simultaneous formation of liner and metal conductor.
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