초록 ▼

In some embodiments, an improved mechanical adhesion of copper metallization to dielectric with partially cured epoxy fillers is presented. In this regard, a substrate build-up film is introduced having epoxy material and a plurality of epoxy microspheres, wherein an interior of the microspheres is

In some embodiments, an improved mechanical adhesion of copper metallization to dielectric with partially cured epoxy fillers is presented. In this regard, a substrate build-up film is introduced having epoxy material and a plurality of epoxy microspheres, wherein an interior of the microspheres is not fully cured. Other embodiments are also disclosed and claimed.

대표청구항 ▼

1. A method comprising: laminating a build-up film to a metallization layer of a substrate, wherein the build-up film includes epoxy micro spheres at least partially embedded within a separate matrix, wherein the micro spheres include an interior that is substantially uncured, and an exterior formed

1. A method comprising: laminating a build-up film to a metallization layer of a substrate, wherein the build-up film includes epoxy micro spheres at least partially embedded within a separate matrix, wherein the micro spheres include an interior that is substantially uncured, and an exterior formed from the same material as the interior, is more cured than the interior; andforming vias through a top surface of the build-up film to expose portions of the metallization layer. 2. The method of claim 1, further comprising performing desmear on the top surface of the build-up film to etch off a portion of the build-up film and to remove the interior of exposed micro spheres. 3. The method of claim 2, further comprising performing electroless plating on the top surface of the build-up film to form a seed layer for a subsequent metallization layer. 4. The method of claim 3, further comprising forming additional build-up and metallization layers to form an integrated circuit package substrate. 5. The method of claim 4, further comprising coupling an integrated circuit device with the substrate to form an integrated circuit package. 6. The method of claim 5, further comprising integrating the integrated circuit package into an electronic appliance. 7. A method comprising: laminating a build-up film to a metallization layer of a substrate, wherein the build-up film includes epoxy micro spheres at a concentration of from about 3 to about 5 volume percent, wherein the micro spheres include an interior that is substantially uncured;forming vias through a top surface of the build-up film to expose portions of the metallization layer;performing desmear on the top surface of the build-up film to etch off a portion of the build-up film and to remove the interior of exposed micro spheres; andperforming electroless plating on the top surface of the build-up film to form a seed layer for a subsequent metallization layer. 8. The method of claim 7, wherein the micro spheres comprise a diameter of from about 1 to about 2 micrometers. 9. The method of claim 7, wherein performing desmear comprises exposing the build-up film to potassium permanganate. 10. The method of claim 7, wherein to etch off a portion of the build-up film comprises to etch off from about 3 to about 4 micrometers of the build-up film.