Sealing technique for decreasing the time it takes to hermetically seal a device and the resulting hermetically sealed device
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B05D-003/02
C23C-014/00
출원번호
US-0755023
(2010-04-06)
등록번호
US-8435604
(2013-05-07)
발명자
/ 주소
Aitken, Bruce Gardiner
An, Chong Pyung
Quesada, Mark Alejandro
출원인 / 주소
Corning Incorporated
대리인 / 주소
Able, Kevin M.
인용정보
피인용 횟수 :
8인용 특허 :
73
초록▼
A sealing method for decreasing the time it takes to hermetically seal a device and the resulting hermetically sealed device (e.g., a hermetically sealed OLED device) are described herein. The sealing method includes the steps of: (1) cooling an un-encapsulated device; (2) depositing a sealing mater
A sealing method for decreasing the time it takes to hermetically seal a device and the resulting hermetically sealed device (e.g., a hermetically sealed OLED device) are described herein. The sealing method includes the steps of: (1) cooling an un-encapsulated device; (2) depositing a sealing material over at least a portion of the cooled device to form an encapsulated device; and (3) heat treating the encapsulated device to form a hermetically sealed device. In one embodiment, the sealing material is a low liquidus temperature inorganic (LLT) material such as, for example, tin-fluorophosphate glass, tungsten-doped tin fluorophosphate glass, chalcogenide glass, tellurite glass, borate glass and phosphate glass. In another embodiment, the sealing material is a Sn2+-containing inorganic oxide material such as, for example, SnO, SnO+P2O5 and SnO+BPO4.
대표청구항▼
1. A method for hermetically sealing a device, said method comprising the steps of: cooling an un-encapsulated device;sputtering a target material consisting of SnO and BPO4 to deposit a single thin film layer of a sealing material over at least a portion of said cooled device to form an encapsulate
1. A method for hermetically sealing a device, said method comprising the steps of: cooling an un-encapsulated device;sputtering a target material consisting of SnO and BPO4 to deposit a single thin film layer of a sealing material over at least a portion of said cooled device to form an encapsulated device; andwherein the thin film sealing material layer forms a hermetic barrier on the device. 2. The method of claim 1, wherein said low liquidus temperature inorganic material has a liquidus temperature ≦1000° C. 3. The method of claim 1, wherein said low liquidus temperature inorganic material has a liquidus temperature ≦600° C. 4. The method of claim 1, wherein said low liquidus temperature inorganic material has a liquidus temperature ≦400° C. 5. The method of claim 1, wherein said cooling step further includes cooling said un-encapsulated device to a temperature <15° C. 6. The method of claim 1, wherein said cooling step further includes cooling said un-encapsulated device to a temperature <10° C. 7. The method of claim 1, wherein said cooling step further includes cooling said un-encapsulated device to a temperature <1° C. 8. The method of claim 1, wherein said sputtering step further includes depositing the sealing material at a deposition rate of about 5 Å/second over said at least a portion of said cooled device. 9. The method of claim 1, wherein said sputtering step further includes depositing the sealing material at a deposition rate of about 25 Å/second over said at least a portion of said cooled device. 10. The method of claim 1, wherein said sputtering step further includes depositing the sealing material at a deposition rate of about 75 Å/second over said at least a portion of said cooled device. 11. The method of claim 1, further comprising the encapsulated device. 12. The method of claim 11, wherein said heat treating step is performed at a temperature <400° C. 13. The method of claim 11, wherein said heat treating step is performed at a temperature <200° C. 14. The method of claim 11, wherein said heat treating step at a temperature <100° C. 15. The method of claim 11, wherein said heat treating step at a temperature <40° C. 16. The method of claim 1, wherein said hermetically sealed device has an oxygen permeance of less than 0.01 cc/m2/atm/day and a water permeance of less than 0.01 g/m2/day. 17. The method of claim 1, wherein said device is a selected one of: an organic-electronic device including: an organic emitting light diode (OLED),a polymer light emitting diode (PLED),a photovoltaic,a metamaterial,a thin film transistor; anda waveguide;an inorganic-electronic device including: a light emitting diode (LED),a photovoltaic,a metamaterial,a thin film transistor; anda waveguide;an optoelectronic device including: an optical switch;a waveguide;a flexible substrate;a food container; anda medical container.
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