A semiconductor device and a process for producing the same, the semiconductor device comprising two conductive layers provided as separate layers, and an insulating layer sandwiched by the two conductive layers, in which the two conductive layers are electrically connected to each other with an emb
A semiconductor device and a process for producing the same, the semiconductor device comprising two conductive layers provided as separate layers, and an insulating layer sandwiched by the two conductive layers, in which the two conductive layers are electrically connected to each other with an embedded conductive layer or an oxide conductive layer provided as filling an opening formed in the insulating layer, and the embedded conductive layer comprises an organic resin film containing a conductive material dispersed therein or an inorganic film containing a conductive material dispersed therein.
대표청구항▼
1. A method for producing a semiconductor device comprising steps of: forming a first conductive layer over a substrate;forming a second conductive layer over the first conductive layer;forming a metallic film which has a function of a black mask over the second conductive layer;forming an interlaye
1. A method for producing a semiconductor device comprising steps of: forming a first conductive layer over a substrate;forming a second conductive layer over the first conductive layer;forming a metallic film which has a function of a black mask over the second conductive layer;forming an interlayer insulating film over the metallic film;forming an opening in the interlayer insulating film to expose the first conductive layer at a bottom of the opening;forming an oxide conductive layer by a spin coating method so that the oxide conductive layer is in direct contact with the first conductive layer and fills the opening;removing part of the oxide conductive layer, thereby flattening an unevenness of the interlayer insulating film at an upper surface of the interlayer insulating film so that the upper surface of the interlayer insulating film and the oxide conductive layer filled in the opening provide a flattened surface; andforming a third conductive layer on and in direct contact with the oxide conductive layer and the interlayer insulating film at the flattened surface,wherein the first conductive layer and the third conductive layer are electrically connected to each other through the oxide conductive layer. 2. The method according to claim 1, wherein the third conductive layer is light reflective. 3. The method according to claim 1, further comprising a step of: forming a fourth conductive layer between the first conductive layer and the third conductive layer. 4. The method according to claim 1, wherein the substrate is a silicon substrate. 5. The method according to claim 1, wherein the semiconductor device is one of the group consisting of a cellular phone, a camcorder, a portable computer, a head mounted display, a rear type projector, a front type projector, and an EL display device. 6. The method according to claim 1, wherein the oxide conductive layer is subjected to an etch back process. 7. The method according to claim 1, wherein the oxide conductive layer is subjected to a polishing treatment. 8. The method according to claim 1, wherein the oxide conductive layer comprises an ITO film. 9. The method according to claim 8, wherein the ITO film includes a carbon series material or a pigment. 10. A method for producing a semiconductor device comprising steps of: forming a thin film transistor comprising a source or drain electrode over a substrate;forming a first conductive layer over the source or drain electrode;forming a metallic film which has a function of a black mask over the first conductive layer;forming an interlayer insulating film over the metallic film;forming an opening in the interlayer insulating film to expose the source or drain electrode at a bottom of the opening;forming an oxide conductive layer by a spin coating method so that the oxide conductive layer is in direct contact with the source or drain electrode and fills the opening;removing part of the oxide conductive layer, thereby flattening an unevenness of the interlayer insulating film at an upper surface of the interlayer insulating film so that the upper surface of the interlayer insulating film and the oxide conductive layer filled in the opening provide a flattened surface; andforming a pixel electrode on and in direct contact with the oxide conductive layer and the interlayer insulating film at the flattened surface,wherein the source or drain electrode and the pixel electrode are electrically connected to each other through the oxide conductive layer. 11. The method according to claim 10, wherein the pixel electrode is light reflective. 12. The method according to claim 10, further comprising a step of: forming a second conductive layer between the source or drain electrode and the pixel electrode. 13. The method according to claim 10, wherein the substrate is a quartz substrate. 14. The method according to claim 10, wherein the semiconductor device is one of the group consisting of a cellular phone, a camcorder, a portable computer, a head mounted display, a rear type projector, a front type projector, and an EL display device. 15. The method according to claim 10, wherein the oxide conductive layer is subjected to an etch back process. 16. The method according to claim 10, wherein the oxide conductive layer is subjected to a polishing treatment. 17. The method according to claim 10, wherein the oxide conductive layer comprises an ITO film. 18. The method according to claim 17, wherein the ITO film includes a carbon series material or a pigment. 19. A method for producing a semiconductor device comprising steps of: forming a first conductive layer over a substrate;forming a second conductive layer over the first conductive layer;forming a metallic film which has a function of a black mask over the second conductive layer;forming an interlayer insulating film over the metallic film;forming an opening in the interlayer insulating film to expose the first conductive layer at a bottom of the opening;forming an oxide conductive layer by a spin coating method so that the oxide conductive layer is in direct contact with the first conductive layer and fills the opening;removing part of the oxide conductive layer, thereby flattening an unevenness of the interlayer insulating film at an upper surface of the interlayer insulating film so that the upper surface of the interlayer insulating film and the oxide conductive layer filled in the opening provide a flattened surface; andforming a third conductive layer on and in direct contact with the oxide conductive layer and the interlayer insulating film at the flattened surface,wherein the first conductive layer and the third conductive layer are electrically connected to each other through the oxide conductive layer, andwherein the interlayer insulating film comprises a polyimide film. 20. The method according to claim 19, wherein the third conductive layer is light reflective. 21. The method according to claim 19, further comprising a step of: forming a fourth conductive layer between the first conductive layer and the third conductive layer. 22. The method according to claim 19, wherein the substrate is a silicon substrate. 23. The method according to claim 19, wherein the semiconductor device is one of the group consisting of a cellular phone, a camcorder, a portable computer, a head mounted display, a rear type projector, a front type projector, and an EL display device. 24. The method according to claim 19, wherein the oxide conductive layer is subjected to an etch back process. 25. The method according to claim 19, wherein the oxide conductive layer is subjected to a polishing treatment. 26. The method according to claim 19, wherein the oxide conductive layer comprises an ITO film. 27. The method according to claim 26, wherein the ITO film includes a carbon series material or a pigment.
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