$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Materials, systems and methods for optoelectronic devices

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-027/146
출원번호 US-0218802 (2011-08-26)
등록번호 US-8441090 (2013-05-14)
발명자 / 주소
  • Tian, Hui
  • Sargent, Edward
출원인 / 주소
  • InVisage Technologies, Inc.
대리인 / 주소
    Schwegman Lundberg & Woessner, P.A.
인용정보 피인용 횟수 : 29  인용 특허 : 43

초록

A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensiti

대표청구항

1. A photodetector comprising: a pixel region comprising an optically sensitive material;pixel circuitry electrically coupled to the optically sensitive material, the pixel circuitry establishing a voltage over an integration period of time, wherein a signal is generated based on the voltage after t

이 특허에 인용된 특허 (43)

  1. Kindt,Willem Johannes, Automatically balanced exposure time and gain in an image sensor.
  2. Martin, Robert J.; Loefer, Gene Raymond, Clutter discriminating focal plane arrays.
  3. Narasimhan Murali K. ; Ngan Kenny King-Tai ; Khurana Nitin ; Stimson Bradley O., Continuous process for forming improved titanium nitride barrier layers.
  4. Martin Eric A. (Medford MA) Vaccaro Kenneth (Acton MA) Waters William (Glassborn NJ) Lorenzo Joseph P. (Stow MA) Spaziani Stephen (Nashua NH), FET optical receiver using backside illumination, indium materials species.
  5. Lester J. Kozlowski ; Gerard J. Sullivan ; Roger E. Dewames ; Brian T. McDermott, High performance ultraviolet imager for operation at room temperature.
  6. Yu Gang, Image sensors made from organic semiconductors.
  7. Yamanobe Masato (Machida JPX) Takeda Shinichi (Hiratsuka JPX) Ishii Takayuki (Hiratsuka JPX) Saika Toshihiro (Zama JPX) Kobayashi Isao (Atsugi JPX), Information processing apparatus including a photoelectric conversion element having a semiconductor layer with a varyin.
  8. Nishigaki Satoshi (Nara JPX) Itoh Masataka (Tenri JPX) Katoh Shohichi (Yamatokoriyama JPX), Large scale contact type image reading unit using two-dimensional sensor array.
  9. Yamazaki,Shunpei; Konuma,Toshimitsu; Yamazaki,Hiroko, Light emitting device.
  10. Jang,Eun Joo; Kim,Sang Sig; Cho,Kyoung Ah; Kim,Hyun Suk, Light receiving element using interconnected nanoparticles.
  11. Augusto, Carlos J. R. P., Light-sensing device.
  12. Varadarajan, John; Resan, Mirna; Wu, Fanxin; Pfenninger, William M.; Vockic, Nemanja; Kenney, John, Luminescent materials that emit light in the visible range or the near infrared range.
  13. Ivanov, Igor Constantin; Sargent, Edward Hartley; Tian, Hui, Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom.
  14. Ivanov, Igor Constantin; Sargent, Edward Hartley; Tian, Hui, Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom.
  15. Tian, Hui, Materials, systems and methods for optoelectronic devices.
  16. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.
  17. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.
  18. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.
  19. Tian, Hui; Sargent, Edward Hartley, Materials, systems and methods for optoelectronic devices.
  20. Czubatyj Wolodymyr (Warren MI) Hack Michael G. (Clawson MI) Shur Michael (Golden Valley MN), Method of making a double injection field effect transistor.
  21. Audas Robert D. (250 Lester Street Waterloo ; Ontario CAX N2L 3W5) Brodie Donald E. (R.R. #3 Waterloo ; Ontario CAX N2J 3Z4), Method of operating a liquid crystal light valve.
  22. Chen Zhizhang (Duluth GA) Rohatgi Ajeet (Marietta GA), Methods for passivating silicon devices at low temperature to achieve low interface state density and low recombination.
  23. Lee, Howard Wing Hoon; Gao, Bingshen; Keshavarz, Majid, Methods of forming quantum dots of Group IV semiconductor materials.
  24. Lee, Howard Wing Hoon; Keshavarz, Majid, Nanocomposite materials with engineered properties.
  25. Scher, Erik; Buretea, Mihai A.; Chow, Calvin; Empedocles, Stephen; Meisel, Andreas; Parce, J. Wallace, Nanostructure and nanocomposite based compositions and photovoltaic devices.
  26. Lee,Howard W. H., Nanostructured materials and photovoltaic devices including nanostructured materials.
  27. Lee, Howard Wing Hoon; Chin, Alan Hap; Pfenninger, William Matthew, Optical devices with engineered nonlinear nanocomposite materials.
  28. Lee, Howard Wing Hoon; Chin, Alan Hap; Pfenninger, William Matthew, Optical devices with engineered nonlinear nanocomposite materials.
  29. Lee,Howard Wing Hoon; Chin,Alan Hap; Pfenninger,William Matthew, Optical devices with engineered nonlinear nanocomposite materials.
  30. Chabinyc, Michael L.; Lujan, Rene A; Arias, Ana Claudia; Ho, Jackson H., Organic thin-film transistor backplane with multi-layer contact structures and data lines.
  31. Halas, Nancy J.; Bradley, Robert K., Partial coverage metal nanoshells and method of making same.
  32. Nakajima, Kazutoshi; Niigaki, Minoru; Mochizuki, Tomoko; Hirohata, Toru, Photocathode comprising a plurality of openings on an electron emission layer.
  33. Shimada Tetsuya (Zama JPX) Itabashi Satoshi (Atsugi JPX) Hatanaka Katsunori (Yokohama JPX), Photosensor with charge storage unit and switch unit formed on a single-crystal semiconductor film.
  34. Chand Naresh (Berkeley Heights NJ), Phototransistor with quantum well base structure.
  35. Lee,Howard Wing Hoon, Quantum dots of group IV semiconductor materials.
  36. Lee,Howard Wing Hoon, Quantum dots of group IV semiconductor materials.
  37. Lee,Howard Wing Hoon, Quantum dots, nanocomposite materials with quantum dots, devices with quantum dots, and related fabrication methods.
  38. Michon Gerald J. (Waterford NY) Brown Dale M. (Schenectady NY), Quiescent signal compensated photodetector system for large dynamic range and high linearity.
  39. Yamada Shinichi,JPX ; Honda Michitaka,JPX ; Nishiki Masayuki,JPX ; Aoki Kunio,JPX ; Sakaguchi Takuya,JPX, Radiation detector, radiation detecting method and X-ray diagnosing apparatus with same radiation detector.
  40. Fujii Hiroyuki (Hyogo) Harada Shigeru (Hyogo JPX), Semiconductor device having multilayer interconnection structure.
  41. Jeremy A Theil, Stacked multiple photosensor structure including independent electrical connections to each photosensor.
  42. Bhargava Rameshwar N. (5 Morningside Ct. Ossining NY 10562), Ultra-fast detectors using doped nanocrystal insulators.
  43. Verhulst, Anne S.; Vandervorst, Wilfried, Wavelength-sensitive detector with elongate nanostructures.

이 특허를 인용한 특허 (29)

  1. Lewis, John; Klem, Ethan, Integrated optical upconversion devices and related methods.
  2. Sargent, Edward Hartley; Koleilat, Ghada; Levina, Larissa, Materials for electronic and optoelectronic devices having enhanced charge transfer.
  3. Ivanov, Igor Constantin; Sargent, Edward Hartley; Tian, Hui, Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom.
  4. Ivanov, Igor Constantin; Sargent, Edward Hartley; Tian, Hui, Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom.
  5. Ivanov, Igor Constantin; Sargent, Edward Hartley; Tian, Hui, Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom.
  6. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.
  7. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.
  8. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.
  9. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.
  10. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.
  11. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.
  12. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.
  13. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.
  14. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.
  15. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.
  16. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.
  17. Nallon, Eric C., Method of sensing nitroaromatic electron accepting compounds using a photovoltaic sensor.
  18. Sargent, Edward Hartley; Jain, Rajsapan; Ivanov, Igor Constantin; Malone, Michael R.; Brading, Michael Charles; Tian, Hui; Della Nave, Pierre Henri Rene; Lee, Jess Jan Young, Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode.
  19. Sargent, Edward Hartley; Jain, Rajsapan; Ivanov, Igor Constantin; Malone, Michael R.; Brading, Michael Charles; Tian, Hui; Della Nave, Pierre Henri Rene; Lee, Jess Jan Young, Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode.
  20. Sargent, Edward Hartley; Jain, Rajsapan; Ivanov, Igor Constantin; Malone, Michael R.; Brading, Michael Charles; Tian, Hui; Nave, Pierre Henri Rene Della; Lee, Jess Jan Young, Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode.
  21. Sargent, Edward Hartley; Koleilat, Ghada; Levina, Larissa, Photodetectors and photovoltaics based on semiconductor nanocrystals.
  22. Sargent, Edward Hartley; Koleilat, Ghada; Levina, Larissa, Photodetectors and photovoltaics based on semiconductor nanocrystals.
  23. Sargent, Edward Hartley; Koleilat, Ghada; Levina, Larissa, Photodetectors and photovoltaics based on semiconductor nanocrystals.
  24. Klem, Ethan; Lewis, John, Quantum dot-fullerene junction based photodetectors.
  25. Sargent, Edward Hartley; Johnston, Keith William; Pattantyus-Abraham, Andras Geza; Clifford, Jason Paul, Schottky-quantum dot photodetectors and photovoltaics.
  26. Kobayashi, Shoji; Kudoh, Yoshiharu; Sano, Takuya, Semiconductor device and electronic equipment.
  27. Kobayashi, Shoji; Kudoh, Yoshiharu; Sano, Takuya, Semiconductor device and electronic equipment.
  28. Terashima, Tomohide, Semiconductor device supplying charging current to element to be charged.
  29. Dotsenko, Vladimir V., Superconductive multi-chip module for high speed digital circuits.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트