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It is an object to provide a semiconductor device integrating various elements without using a semiconductor substrate, and a method of manufacturing the same. According to the present invention, a layer to be separated including an inductor, a capacitor, a resistor element, a TFT element, an embedd

It is an object to provide a semiconductor device integrating various elements without using a semiconductor substrate, and a method of manufacturing the same. According to the present invention, a layer to be separated including an inductor, a capacitor, a resistor element, a TFT element, an embedded wiring and the like, is formed over a substrate, separated from the substrate, and transferred onto a circuit board 100. An electrical conduction with a wiring pattern 114 provided in the circuit board 100 is made by a wire 112 or a solder 107, thereby forming a high frequency module or the like.

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1. A semiconductor device comprising: a circuit board;a transistor comprising source and drain electrodes;a first layer comprising the transistor over the circuit board;a capacitor comprising a first electrode, a dielectric thin film and a second electrode, wherein the dielectric thin film is interp

1. A semiconductor device comprising: a circuit board;a transistor comprising source and drain electrodes;a first layer comprising the transistor over the circuit board;a capacitor comprising a first electrode, a dielectric thin film and a second electrode, wherein the dielectric thin film is interposed between the first electrode and the second electrode,a second layer comprising the capacitor over the first layer;a third electrode over the second layer; anda fourth electrode over the circuit board, the fourth electrode being electrically connected to the third electrode,wherein the third electrode is electrically connected to one of the source and the drain electrodes, andwherein the fourth electrode is not covered with the first layer. 2. The semiconductor device according to claim 1, wherein the circuit board is a ceramic board or a resin substrate. 3. The semiconductor device according to claim 1, wherein at least one selected from the group consisting of a CPU, a memory element, a thin film diode, a photoelectric transducer and a resistor element is provided on the circuit board. 4. The semiconductor device according to claim 1, wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation, a DVD player, an electronic game machine, a card or a personal digital assistant. 5. A semiconductor device comprising: a circuit board;a transistor comprising source and drain electrodes;a first layer comprising the transistor over the circuit board;a capacitor comprising a first electrode, a dielectric thin film and a second electrode, wherein the dielectric thin film is interposed between the first electrode and the second electrode,a second layer comprising the capacitor over the first layer;a third layer comprising a wiring over the second layer;a third electrode over the second layer; anda fourth electrode over the circuit board, the fourth electrode being electrically connected to the third electrode,wherein the third electrode is electrically connected to one of the source and the drain electrodes,wherein the wiring is electrically connected to the third electrode, andwherein the fourth electrode is not covered with the first layer. 6. The semiconductor device according to claim 5, wherein the circuit board is a ceramic board or a resin substrate. 7. The semiconductor device according to claim 5, wherein at least one selected from the group consisting of a CPU, a memory element, a thin film diode, a photoelectric transducer and a resistor element is provided on the circuit board. 8. The semiconductor device according to claim 5, wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation, a DVD player, an electronic game machine, a card or a personal digital assistant. 9. A semiconductor device comprising: a circuit board;a transistor comprising source and drain electrodes;a first layer comprising the transistor over the circuit board;a capacitor comprising a first electrode, a dielectric thin film and a second electrode, wherein the dielectric thin film is interposed between the first electrode and the second electrode,a second layer comprising the capacitor over the first layer;a third layer comprising a wiring over the second layer;a third electrode over the second layer; anda fourth electrode over the circuit board, the fourth electrode being electrically connected to the third electrode,wherein the third electrode is electrically connected to one of the source and the drain electrodes,wherein the wiring is electrically connected to one of the first and the second electrode, andwherein the fourth electrode is not covered with the first layer. 10. The semiconductor device according to claim 9, wherein the circuit board is a ceramic board or a resin substrate. 11. The semiconductor device according to claim 9, wherein at least one selected from the group consisting of a CPU, a memory element, a thin film diode, a photoelectric transducer and a resistor element is provided on the circuit board. 12. The semiconductor device according to claim 9, wherein the semiconductor device is one selected from the group consisting of a video camera, a digital camera, a goggle type display, a car navigation, a DVD player, an electronic game machine, a card or a personal digital assistant.