Inverter control system
원문보기
IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
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출원번호 |
US-0961267
(2010-12-06)
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등록번호 |
US-8451045
(2013-05-28)
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우선권정보 |
KR-10-2010-0092054 (2010-09-17) |
발명자
/ 주소 |
- Yim, Jeongbin
- Han, Daewoong
- Kang, Gu Bae
- Min, Byungsoon
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출원인 / 주소 |
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대리인 / 주소 |
Edwards Wildman Palmer LLP
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인용정보 |
피인용 횟수 :
4 인용 특허 :
5 |
초록
▼
An inverter control apparatus is provided that offers a ‘soft turn off’ to a gate operation of the inverter so as to securely protect the IGBT. In particular, an inverter control system according to the present invention may include a gate operating portion that controls turn on/off of an IGBT and f
An inverter control apparatus is provided that offers a ‘soft turn off’ to a gate operation of the inverter so as to securely protect the IGBT. In particular, an inverter control system according to the present invention may include a gate operating portion that controls turn on/off of an IGBT and forcibly turns off the IGBT if a short circuit or an over current is detected from the IGBT, a current buffer that amplifies a control current for the turn on/off of the IGBT that is outputted from the gate operating portion, and a filter that delays the forcible turn off control current that is outputted from the gate operating portion.
대표청구항
▼
1. An inverter control system, comprising: a gate operating portion that controls turn on/off of an IGBT and forcibly turns off the IGBT, if a short circuit or an over current is detected from the IGBT;a current buffer configured to amplify a control current for the turn on/off of the IGBT that is o
1. An inverter control system, comprising: a gate operating portion that controls turn on/off of an IGBT and forcibly turns off the IGBT, if a short circuit or an over current is detected from the IGBT;a current buffer configured to amplify a control current for the turn on/off of the IGBT that is outputted from the gate operating portion;a filter configured to delay the forcible turn off control current that is outputted from the gate operating portion. 2. The inverter control system of claim 1, wherein the current buffer comprises: a first transistor having a base terminal in connection with an output of the filter, a collector terminal in connection with a power source, and an emitter terminal in connection with a gate terminal of the IGBT;a second transistor having a base terminal in connection with an output of the filter, an emitter terminal in connection with a gate terminal of the IGBT, and a collector terminal in connection with a ground; anda voltage dividing resistance configured to stabilize control current amplified according to an ‘on/off’ condition of the first transistor and the second transistor to securely operated the IGBT. 3. The inverter control system of claim 1, wherein the filter includes an RC filter in which a capacitor and a resistance are coupled in parallel, wherein the RC filter is configured so as to not delay on/off response speed if the IGBT is normal. 4. The inverter control system of claim 1, wherein the filter delays a forcible turn-off control current of the IGBT outputted from the gate operating portion to delay a turn on time of a second transistor forming a current buffer. 5. An inverter control system, comprising: a gate operating portion that controls turn on/off of an IGBT and turns off the IGBT if a short circuit or over current detected from the IGBT;a current buffer configured to amplify turn on/off control current of the IGBT outputted from the gate operating portion;a filter resistance configured to form a separate line for directly supplying a forcible turn-off control current of the IGBT outputted from the gate operating portion with a gate terminal of the IGBT such that the forcible turn-off control current of the IGBT is not supplied to the current buffer. 6. The inverter control system of claim 5, wherein the filter resistance is configured such that the forcible turn-off control current outputted from the gate operating portion is not amplified in the current buffer. 7. The inverter control system of claim 5, wherein the filter resistance is in connection with a base terminal and an emitter terminal of the first transistor and the second transistor forming the current buffer. 8. The inverter control system of claim 5, wherein the filter resistance has a characteristic of (Iflt×Rflt)VQ_on, wherein Iflt is a forcible turn-off control current of the IGBT, Rflt is a filter resistance value, VQ_on is a minimum voltage for turning on the first transistor and the second transistor of the current buffer, and Io is a control current for operating turn on/off of the IGBT in a normal IGBT condition. 9. The inverter control system of claim 5, wherein the gate operating portion outputs a turn on/off control current (Io) higher than a forcible turn-off control current (Iflt) in a normal condition of the IGBT, such that a voltage (Io×Rflt) applied to the filter resistance becomes higher than a minimum voltage (VQ_on) for turning on the first transistor and the second transistor of the current buffer. 10. The inverter control system of claim 5, wherein the gate operating portion outputs a forcible turn-off control current (Iflt) of the IGBT lower than a normal control current (Io) in a transient condition of the IGBT, such that a voltage (Io×Rflt) applied to the filter resistance becomes lower than a minimum voltage (VQ_on) for turning on the second transistor of the current buffer. 11. An inverter control system, comprising: a gate operating portion that controls a turn on/off of an IGBT and forcibly turns off the IGBT if a short circuit or over current is detected from the IGBT;a first transistor and a second transistor that are configured so as to switch according to an on/off control current outputted from the gate operating portion to amplify a control current supplied to a gate terminal of the IGBT; anda filter resistance in connection with a base terminal and an emitter terminal of the first transistor and the second transistor to form a separate line through which a forcible turn-off control current of the IGBT is directly transferred to a gate of the IGBT, such that a forcible turn-off control current of the IGBT cannot be supplied to a base of the first transistor and the second transistor. 12. An inverter control system, comprising: a gate operating portion that controls a turn on/off of an IGBT and turns off the IGBT forcibly if a short circuit or over current is detected from the IGBT;a first transistor and a second transistor that are configured so as to switch according to an on/off control current outputted from the gate operating portion to amplify a control current supplied to a gate terminal of the IGBT;a first resistance in connection with a base terminal of the first transistor to adjust a switching slope;a second resistance in connection with a base terminal of the second transistor to adjust a switching slope;a third resistance that is coupled with the second resistance in series, and is connected to a base terminal and an emitter terminal of the second transistor to form a separate line through which the forcible turn-off control current of the IGBT is direct supplied to a gate of the IGBT, such that the forcible turn-off control current of the IGBT is not supplied to a base of the second transistor. 13. The inverter control system of claim 12, wherein the third resistance has a characteristic of (Iflt×Rflt)VQ_on wherein Iflt is a forcible turn-off control current of the IGBT, Rflt is a filter resistance value, VQ_on is a minimum voltage for turning on the first transistor and the second transistor of the current buffer, and Io is a control current for turning on/off the IGBT in a normal condition of the IGBT. 14. The inverter control system of claim 12, wherein the gate operating portion outputs a turn on/off control current (Io) higher than the forcible turn-off control current (Iflt) in a normal condition of the IGBT such that a voltage (Io×Rflt) applied to the third resistance becomes higher than a minimum voltage (VQ_on) for turning on the first transistor and the second transistor of the current buffer. 15. The inverter control system of claim 12, wherein the gate operating portion outputs a forcible turn-off control current for the IGBT (Iflt) lower than a normal control current (Io) in a transient condition of the IGBT such that a voltage (Io×Rflt) applied to the third resistance becomes lower than a minimum voltage (VQ_on) for turning on the second transistor of the current buffer.
이 특허에 인용된 특허 (5)
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Ohi, Takeshi; Nakayama, Yasushi; Tanaka, Takeshi, Drive circuit for driving power semiconductor device.
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He Jin ; Jacobs Mark E. ; Sridhar Kamakshi, Gate drive circuit for isolated gate devices and method of operation thereof.
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Igarashi Takashi,JPX, Semiconductor circuit and power transistor protection circuit.
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Miettinen Erkki,FIX, Stabilized gate drivers.
이 특허를 인용한 특허 (4)
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Chimento, Filippo; Hermansson, Willy; Norrga, Staffan, Gate control circuit, power module and associated method.
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Pang, Sung Man, Gate driver circuit.
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Jeong, In Wha; Suh, Bum Seok, Inverter with series connected gate driving circuits and voltage divider.
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Reiter, Tomas Manuel; Kett, Juergen; Doemel, Bernhard, Method for controlling a transistor and control circuit.
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