IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0519109
(2007-12-13)
|
등록번호 |
US-8453936
(2013-06-04)
|
우선권정보 |
GB-0624915.5 (2006-12-14) |
국제출원번호 |
PCT/GB2007/004778
(2007-12-13)
|
§371/§102 date |
20100707
(20100707)
|
국제공개번호 |
WO2008/071971
(2008-06-19)
|
발명자
/ 주소 |
- Johnson, Daniel Robert
- Clarke, Paul Richard
- Lawrence, Christopher Robert
- Brown, James Robert
- Damerell, William Norman
- Duncombe, Richard James
|
출원인 / 주소 |
|
대리인 / 주소 |
McDonnell Boehnen Hulbert & Berghoff LLP
|
인용정보 |
피인용 횟수 :
4 인용 특허 :
53 |
초록
▼
A device capable of enhancing an electric field to drive an electromagnetic tag into operation is switchable between states to control operation of the tag. Enhancement is provided by a dielectric cavity structure defined between first and second conducting layers. Different states of the device may
A device capable of enhancing an electric field to drive an electromagnetic tag into operation is switchable between states to control operation of the tag. Enhancement is provided by a dielectric cavity structure defined between first and second conducting layers. Different states of the device may have different resonant frequencies and read ranges according to the characteristics of the enhancement. As such a container can be provided which includes a tag which switches states on opening, allowing improved tracking characteristics.
대표청구항
▼
1. Apparatus comprising a resonant dielectric cavity defined between first and second conducting layers, said apparatus having a first state in which an electromagnetic field of a first frequency is enhanced adjacent to said first layer, and a second state in which an electromagnetic field of said f
1. Apparatus comprising a resonant dielectric cavity defined between first and second conducting layers, said apparatus having a first state in which an electromagnetic field of a first frequency is enhanced adjacent to said first layer, and a second state in which an electromagnetic field of said first frequency is substantially unaffected, said component being switchable between said first state and said second state by an external stimulus. 2. Apparatus according to claim 1, wherein said stimulus is the removal of at least part of said first or second conducting layer. 3. Apparatus according to claim 2, wherein removal results in a change of length of said first layer. 4. Apparatus according to claim 1, wherein either said first or said second conducting layer comprises a weakened or perforated portion to facilitate said removal of material. 5. Apparatus according to claim 1, wherein a release layer is included between said dielectric and either of said first or second conducting portions to facilitate said removal. 6. Apparatus according to claim 1, wherein said first layer is adapted to be removable by scratching. 7. Apparatus according to claim 1, wherein at least a portion of said dielectric is adapted to change between a substantially non conducting state and a conducting state on application of said stimulus. 8. Apparatus according to claim 7, wherein said stimulus comprises applying an RF field of a predetermined frequency. 9. Apparatus according to claim 7, wherein said stimulus comprises exposure to UV radiation. 10. Apparatus according to claim 7, wherein the stimulus comprises an applied electric potential. 11. Apparatus according to claim 7, wherein said dielectric is porous. 12. Apparatus according to claim 1, wherein at least a portion of said dielectric is adapted to change dielectric constant on application of said stimulus. 13. Apparatus according to claim 1, wherein said electromagnetic field is enhanced by a factor greater than or equal to 50, 100, or 200. 14. Apparatus according to claim 1, wherein an electromagnetic field of a second frequency is enhanced at said mounting site in said second state. 15. Apparatus according to claim 1 including an EM tag located at an edge of said cavity in a field enhancement region wherein in the first state the field enhancement is sufficient for the EM tag to be readable, and in the second state the field enhancement is insufficient for the EM tag to be readable at a given frequency and read range. 16. A device according to claim 15, wherein said tag is powered by differential capacitive coupling. 17. A device according to claim 15, wherein the EM tag is a low Q RFID tag. 18. The apparatus of claim 15 wherein the electromagnetic properties of said dielectric vary in response to a change in environmental conditions, thereby changing the degree of enhancement between a first state in which the EM tag is readable, and a second state in which the tag is unreadable, at a given frequency and read range. 19. Apparatus according to claim 15, wherein said EM tag is electrically isolated from said first conductor layer. 20. Apparatus according to claim 1, wherein said apparatus can be returned to said first state by a further external stimulus. 21. Apparatus according to claim 1, wherein the first conducting layer does not overlie the second conducting layer in at least one area of absence. 22. Apparatus according to claim 21, wherein a tag is mounted or adapted to be mounted at said area of absence. 23. Apparatus according to claim 22 wherein the spacing G between at least one edge of the first conductor layer and the area of absence is determined by G=λ/2n where n is the refractive index of the dielectric, and A is the intended wavelength of operation of the decoupler. 24. Apparatus according to claim 23 wherein the areas of absence are slit structures. 25. Apparatus according to claim 24 wherein the slit width is less than 500 microns. 26. Apparatus according to claim 1, wherein said first layer and said second layer are electrically connected at one edge. 27. Apparatus according to claim 26, wherein the length of the first conducting layer is approximately λ/4 measured from the conducting edge portion, where λ is the wavelength, in the dielectric material, of EM radiation at the frequency of operation v. 28. Apparatus according to claim 26, wherein the second conducting side wall has a continuous length measured from the conducting base portion which is at least as long as the length of the first conducting side wall. 29. Apparatus according to claim 1, wherein the total thickness of the component is less than λ/4, or λ/10, or λ/300 or λ/1000, where λ is the intended wavelength of operation at said first frequency. 30. Apparatus according to claim 1, wherein the total thickness of the component or is 1 mm or less, or 500 μm or less, or 100 μm or less. 31. Apparatus according to claim 1, wherein one of the conductor layers forms part, or substantially all of a metallic body.
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