IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0519249
(2011-01-18)
|
등록번호 |
US-8461011
(2013-06-11)
|
우선권정보 |
KR-10-2010-0004272 (2010-01-18) |
국제출원번호 |
PCT/KR2011/000354
(2011-01-18)
|
§371/§102 date |
20120626
(20120626)
|
국제공개번호 |
WO2011/087341
(2011-07-21)
|
발명자
/ 주소 |
- Jeon, Min Sung
- Lee, Won Jae
- Cho, Eun Chel
- Lee, Joon Sung
|
출원인 / 주소 |
- Hyundai Heavy Industries Co., Ltd.
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
2 인용 특허 :
1 |
초록
▼
The present disclosure relates to a method for manufacturing a back electrode-type solar cell. The method for manufacturing a back electrode-type solar cell disclosed herein includes: A method for manufacturing a back electrode-type solar cell, comprising: preparing an n-type crystalline silicon sub
The present disclosure relates to a method for manufacturing a back electrode-type solar cell. The method for manufacturing a back electrode-type solar cell disclosed herein includes: A method for manufacturing a back electrode-type solar cell, comprising: preparing an n-type crystalline silicon substrate; forming a thermal diffusion control film on a front surface, a back surface and a side surface of the substrate; forming a p-type impurity region by implanting p-type impurity ions onto the back surface of the substrate; patterning the thermal diffusion control film so that the back surface of the substrate is selectively exposed; and forming a high-concentration back field layer (n+) at an exposed region of the back surface of the substrate and a low-concentration front field layer (n−) at the front surface of the substrate by performing a thermal diffusion process, and forming a p+ emitter region by activating the p-type impurity region.
대표청구항
▼
1. A method for manufacturing a back electrode-type solar cell, comprising: preparing an n-type crystalline silicon substrate;forming a thermal diffusion control film on a front surface, a back surface and a side surface of the substrate;forming a p-type impurity region by implanting p-type impurity
1. A method for manufacturing a back electrode-type solar cell, comprising: preparing an n-type crystalline silicon substrate;forming a thermal diffusion control film on a front surface, a back surface and a side surface of the substrate;forming a p-type impurity region by implanting p-type impurity ions onto the back surface of the substrate;patterning the thermal diffusion control film so that the back surface of the substrate is selectively exposed; andforming a high-concentration back field layer (n+) at an exposed region of the back surface of the substrate and a low-concentration front field layer (n−) at the front surface of the substrate by performing a thermal diffusion process, and forming a p+ emitter region by activating the p-type impurity region. 2. The method for manufacturing a back electrode-type solar cell according to claim 1, wherein, in said patterning of the thermal diffusion control film so that the back surface of the substrate is selectively exposed, comprising removing the thermal diffusion control film and a predetermined depth of the substrate at a region where the high-concentration back field layer (n+) is to be formed. 3. The method for manufacturing a back electrode-type solar cell according to claim 2, wherein, in said removing of the thermal diffusion control film and a predetermined depth of the substrate at a region where the high-concentration back field layer (n+) is to be formed, comprising irradiating laser onto the thermal diffusion control film at a region where the high-concentration back field layer (n+) is to be formed. 4. The method for manufacturing a back electrode-type solar cell according to claim 2, wherein, in said removing of the thermal diffusion control film and a predetermined depth of the substrate at a region where the high-concentration back field layer (n+) is to be formed, comprising applying an etching paste onto the thermal diffusion control film at a region where the high-concentration back field layer (n+) is to be formed. 5. The method for manufacturing a back electrode-type solar cell according to claim 2, wherein, in said removing of the thermal diffusion control film and a predetermined depth of the substrate at a region where the high-concentration back field layer (n+) is to be formed, comprising removing the thermal diffusion control film and the predetermined depth of the substrate at a region where the high-concentration back field layer (n+) is to be formed by means of reactive ion etching. 6. The method for manufacturing a back electrode-type solar cell according to claim 2, wherein the thickness of the removed substrate corresponds to a depth of the p-type impurity region. 7. A method for manufacturing a back electrode-type solar cell, comprising: preparing an n-type crystalline silicon substrate;forming a thermal diffusion control film on a front surface, a back surface and a side surface of the substrate;forming a p-type impurity region by implanting p-type impurity ions onto the back surface of the substrate;forming an anti-diffusion film on the back surface of the substrate;patterning the thermal diffusion control film and the anti-diffusion film so that the back surface of the substrate is selectively exposed; andforming a high-concentration back field layer (n+) at an exposed region of the back surface of the substrate and a low-concentration front field layer (n−) at the front surface of the substrate by performing a thermal diffusion process, and forming a p+ emitter region by activating the p-type impurity region. 8. The method for manufacturing a back electrode-type solar cell according to claim 7, wherein, in said patterning of the thermal diffusion control film and the anti-diffusion film so that the back surface of the substrate is selectively exposed, comprising removing the thermal diffusion control film, the anti-diffusion film and a predetermined depth of the substrate at a region where the high-concentration back field layer (n+) is to be formed. 9. The method for manufacturing a back electrode-type solar cell according to claim 8, wherein, when the thermal diffusion control film, the anti-diffusion film and the predetermined depth of the substrate are removed at a region where the high-concentration back field layer (n+) is to be formed, comprising irradiating laser onto the thermal diffusion control film at a region where the high-concentration back field layer (n+) is to be formed. 10. The method for manufacturing a back electrode-type solar cell according to claim 8, wherein, when the thermal diffusion control film, the anti-diffusion film and the predetermined depth of the substrate are removed at a region where the high-concentration back field layer (n+) is to be formed, comprising removing the thermal diffusion control film and the predetermined depth of the substrate at a region where the high-concentration back field layer (n+) is to be formed by means of reactive ion etching. 11. The method for manufacturing a back electrode-type solar cell according to claim 8, wherein the thickness of the removed substrate corresponds to a depth of the p-type impurity region. 12. The method for manufacturing a back electrode-type solar cell according to claim 1, wherein the thickness of the thermal diffusion control film formed at the front surface of the substrate is relatively smaller than that of the thermal diffusion control films formed at the back surface and the side surface of the substrate. 13. The method for manufacturing a back electrode-type solar cell according to claim 1, wherein the p+ emitter region has a sheet resistance of 10 to 60 Ω/sq. 14. The method for manufacturing a back electrode-type solar cell according to claim 1, wherein the high-concentration back field layer (n+) has a sheet resistance of 10 to 80 Ω/sq. 15. The method for manufacturing a back electrode-type solar cell according to claim 1, wherein the low-concentration front field layer (n−) has a sheet resistance of 50 to 150 Ω/sq. 16. The method for manufacturing a back electrode-type solar cell according to claim 7, wherein the thickness of the thermal diffusion control film formed at the front surface of the substrate is relatively smaller than that of the thermal diffusion control films formed at the back surface and the side surface of the substrate. 17. The method for manufacturing a back electrode-type solar cell according to claim 7, wherein the p+ emitter region has a sheet resistance of 10 to 60 Ω/sq. 18. The method for manufacturing a back electrode-type solar cell according to claim 7, wherein the high-concentration back field layer (n+) has a sheet resistance of 10 to 80 Ω/sq. 19. The method for manufacturing a back electrode-type solar cell according to claim 7, wherein the low-concentration front field layer (n−) has a sheet resistance of 50 to 150 Ω/sq.
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