Semiconductor device and method for manufacturing the same
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-027/12
H01L-021/30
출원번호
US-0251641
(2011-10-03)
등록번호
US-8470688
(2013-06-25)
우선권정보
JP-2007-181762 (2007-07-11)
발명자
/ 주소
Isobe, Atsuo
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson, Eric J.
인용정보
피인용 횟수 :
5인용 특허 :
40
초록▼
A semiconductor device and a method for manufacturing a semiconductor device are provided. A semiconductor device comprises a first single-crystal semiconductor layer including a first channel formation region and a first impurity region over a substrate having an insulating surface, a first gate in
A semiconductor device and a method for manufacturing a semiconductor device are provided. A semiconductor device comprises a first single-crystal semiconductor layer including a first channel formation region and a first impurity region over a substrate having an insulating surface, a first gate insulating layer over the first single-crystal semiconductor layer, a gate electrode over the first gate insulating layer, a first interlayer insulating layer over the first gate insulating layer, a second gate insulating layer over the gate electrode and the first interlayer insulating layer, and a second single-crystal semiconductor layer including a second channel formation region and a second impurity region over the second gate insulating layer. The first channel formation region, the gate electrode, and the second channel formation region are overlapped with each other.
대표청구항▼
1. A method for manufacturing a semiconductor device comprising the steps of: forming a first damaged region in a first single-crystal semiconductor substrate;bonding the first single-crystal semiconductor substrate and a substrate having an insulating surface with a bonding layer interposed therebe
1. A method for manufacturing a semiconductor device comprising the steps of: forming a first damaged region in a first single-crystal semiconductor substrate;bonding the first single-crystal semiconductor substrate and a substrate having an insulating surface with a bonding layer interposed therebetween;separating the first single-crystal semiconductor substrate, so that a first single-crystal semiconductor layer is left over the substrate having the insulating surface;forming a first gate insulating layer over the first single-crystal semiconductor layer;forming a gate electrode over the first gate insulating layer, wherein the gate electrode overlaps the first single-crystal semiconductor layer;forming a first interlayer insulating layer over the gate electrode;planarizing an upper surface of the first interlayer insulating layer, so that a surface of the gate electrode is exposed;forming a second gate insulating layer over the exposed surface of the gate electrode and the first interlayer insulating layer;forming a second damaged region in a second single-crystal semiconductor substrate;bonding the second single-crystal semiconductor substrate and the substrate having the insulating surface with the second gate insulating layer interposed therebetween; andseparating the second single-crystal semiconductor substrate, so that a second single-crystal semiconductor layer is left over the second gate insulating layer, wherein the second single-crystal semiconductor layer overlaps the gate electrode and the first single-crystal semiconductor layer,wherein the first single-crystal semiconductor layer and the gate electrode are formed so as to form a first transistor of a complementary circuit,wherein the second single-crystal semiconductor layer and the gate electrode are formed so as to form a second transistor of the complementary circuit, andwherein the gate electrode is a common gate electrode of the first transistor and the second transistor including the second single-crystal semiconductor layer. 2. The method for manufacturing a semiconductor device according to claim 1, wherein the first damaged region is formed by irradiating the first single-crystal semiconductor substrate with first ions, and wherein the second damaged region is formed by irradiating the second single-crystal semiconductor substrate with second ions. 3. The method for manufacturing a semiconductor device according to claim 1, wherein each of the bonding layer and the second gate insulating layer is a silicon oxide film. 4. The method for manufacturing a semiconductor device according to claim 1, wherein each of the bonding layer and the second gate insulating layer is a silicon oxide film, and wherein the silicon oxide film is formed by a chemical vapor deposition method with the use of organic silane gas. 5. The method for manufacturing a semiconductor device according to claim 1, wherein the first interlayer insulating layer includes an organic insulating material. 6. A method for manufacturing a semiconductor device comprising the steps of: forming a first damaged region in a first single-crystal semiconductor substrate;bonding the first single-crystal semiconductor substrate and a substrate having an insulating surface with a bonding layer interposed therebetween;separating the first single-crystal semiconductor substrate, so that a first single-crystal semiconductor layer is left over the substrate having the insulating surface;forming a first gate insulating layer over the first single-crystal semiconductor layer;forming a gate electrode over the first gate insulating layer, wherein the gate electrode overlaps the first single-crystal semiconductor layer;forming a first interlayer insulating layer over the gate electrode;planarizing an upper surface of the first interlayer insulating layer, so that a surface of the gate electrode is exposed;forming a second gate insulating layer over the exposed surface of the gate electrode and the first interlayer insulating layer;forming a second damaged region in a second single-crystal semiconductor substrate;bonding the second single-crystal semiconductor substrate and the substrate having the insulating surface with the second gate insulating layer interposed therebetween;separating the second single-crystal semiconductor substrate, so that a second single-crystal semiconductor layer is left over the second gate insulating layer, wherein the second single-crystal semiconductor layer overlaps the gate electrode and the first single-crystal semiconductor layer;forming a second interlayer insulating layer over the second single-crystal semiconductor layer;forming a first opening in the first gate insulating layer, the first interlayer insulating layer, the second gate insulating layer, and the second interlayer insulating layer and forming a second opening in the second interlayer insulating layer, andforming a plurality of wirings over at least one of the first opening and the second opening,wherein a first transistor of a complementary circuit is formed by at least the steps of separating the first single-crystal semiconductor substrate, forming the first gate insulating layer and forming the gate electrode,wherein a second transistor of the complementary circuit is formed by at least the steps of forming the gate electrode, forming the second gate insulating layer, and separating the second single-crystal semiconductor substrate, andwherein the gate electrode is a common gate electrode of the first transistor and the second transistor including the second single-crystal semiconductor layer. 7. The method for manufacturing a semiconductor device according to claim 6, wherein the first damaged region is formed by irradiating the first single-crystal semiconductor substrate with first ions, and wherein the second damaged region is formed by irradiating the second single-crystal semiconductor substrate with second ions. 8. The method for manufacturing a semiconductor device according to claim 6, wherein each of the bonding layer and the second gate insulating layer is a silicon oxide film. 9. The method for manufacturing a semiconductor device according to claim 6, wherein each of the bonding layer and the second gate insulating layer is a silicon oxide film, and wherein the silicon oxide film is formed by a chemical vapor deposition method with the use of organic silane gas. 10. The method for manufacturing a semiconductor device according to claim 6, wherein the first interlayer insulating layer includes an organic insulating material. 11. The method for manufacturing a semiconductor device according to claim 6, wherein the second interlayer insulating layer includes an organic insulating material. 12. A method for manufacturing a semiconductor device comprising the steps of: forming a first damaged region in a first single-crystal semiconductor substrate;bonding the first single-crystal semiconductor substrate and a substrate having an insulating surface with a bonding layer interposed therebetween;separating the first single-crystal semiconductor substrate, so that a first single-crystal semiconductor layer is left over the substrate having the insulating surface;forming a first gate insulating layer over the first single-crystal semiconductor layer;forming a gate electrode over the first gate insulating layer, wherein the gate electrode overlaps the first single-crystal semiconductor layer;forming a first interlayer insulating layer over the gate electrode;planarizing an upper surface of the first interlayer insulating layer, so that a surface of the gate electrode is exposed;forming a second gate insulating layer over the exposed surface of the gate electrode and the first interlayer insulating layer; andforming a second single-crystal semiconductor layer over the second gate insulating layer, wherein the second single-crystal semiconductor layer overlaps the gate electrode and the first single-crystal semiconductor layer,wherein the first single-crystal semiconductor layer and the gate electrode are formed so as to form a first transistor,wherein the second single-crystal semiconductor layer and the gate electrode are formed so as to form a second transistor, andwherein the gate electrode is a common gate electrode of the first transistor and the second transistor including the second single-crystal semiconductor layer. 13. The method for manufacturing a semiconductor device according to claim 12, wherein the first damaged region is formed by irradiating the first single-crystal semiconductor substrate with first ions. 14. The method for manufacturing a semiconductor device according to claim 12, wherein each of the bonding layer and the second gate insulating layer is a silicon oxide film. 15. The method for manufacturing a semiconductor device according to claim 12, wherein each of the bonding layer and the second gate insulating layer is a silicon oxide film, and wherein the silicon oxide film is formed by a chemical vapor deposition method with the use of organic silane gas. 16. The method for manufacturing a semiconductor device according to claim 12, wherein the first interlayer insulating layer includes an organic insulating material. 17. A method for manufacturing a semiconductor device comprising the steps of: forming a first damaged region in a first single-crystal semiconductor substrate;bonding the first single-crystal semiconductor substrate and a substrate having an insulating surface with a bonding layer interposed therebetween;separating the first single-crystal semiconductor substrate, so that a first single-crystal semiconductor layer is left over the substrate having the insulating surface;forming a first gate insulating layer over the first single-crystal semiconductor layer;forming a gate electrode over the first gate insulating layer, wherein the gate electrode overlaps the first single-crystal semiconductor layer;forming a first interlayer insulating layer over the gate electrode;planarizing an upper surface of the first interlayer insulating layer, so that a surface of the gate electrode is exposed;forming a second gate insulating layer over the exposed surface of the gate electrode and the first interlayer insulating layer;forming a second single-crystal semiconductor layer over the second gate insulating layer, wherein the second single-crystal semiconductor layer overlaps the gate electrode and the first single-crystal semiconductor layer;forming a second interlayer insulating layer over the second single-crystal semiconductor layer;forming a first opening in the first gate insulating layer, the first interlayer insulating layer, the second gate insulating layer, and the second interlayer insulating layer and forming a second opening in the second interlayer insulating layer, andforming a plurality of wirings over at least one of the first opening and the second opening,wherein a first transistor is formed by at least the steps of separating the first single-crystal semiconductor substrate, forming the first gate insulating layer and forming the gate electrode,wherein a second transistor is formed by at least the steps of forming the gate electrode and forming the second gate insulating layer, andwherein the gate electrode is a common gate electrode of the first transistor and the second transistor including the second single-crystal semiconductor layer. 18. The method for manufacturing a semiconductor device according to claim 17, wherein the first damaged region is formed by irradiating the first single-crystal semiconductor substrate with first ions. 19. The method for manufacturing a semiconductor device according to claim 17, wherein each of the bonding layer and the second gate insulating layer is a silicon oxide film. 20. The method for manufacturing a semiconductor device according to claim 17, wherein each of the bonding layer and the second gate insulating layer is a silicon oxide film, and wherein the silicon oxide film is formed by a chemical vapor deposition method with the use of organic silane gas. 21. The method for manufacturing a semiconductor device according to claim 17, wherein the first interlayer insulating layer includes an organic insulating material. 22. The method for manufacturing a semiconductor device according to claim 17, wherein the second interlayer insulating layer includes an organic insulating material.
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