초록 ▼

The invention provides a switching circuit of a power semiconductor device having connected in parallel SiC diodes with a small recovery current, capable of significantly reducing turn-on loss and recovery loss without increasing the noise in the MHz band, and contributing to reducing the loss and n

The invention provides a switching circuit of a power semiconductor device having connected in parallel SiC diodes with a small recovery current, capable of significantly reducing turn-on loss and recovery loss without increasing the noise in the MHz band, and contributing to reducing the loss and noise of inverters. The present invention provides a switching circuit and an inverter circuit of a power semiconductor device comprising a module combining Si-IGBT and SiC diodes, wherein an on-gate resistance is set smaller than an off-gate resistance.

대표청구항 ▼

1. An inverter device comprising: a power semiconductor switching device;a freewheeling diode connected in parallel with the power semiconductor switching device, the freewheeling diode comprising a Schottky barrier diode of a wide bandgap semiconductor of SiC, GaN or diamond, a PiN diode, or a MPS

1. An inverter device comprising: a power semiconductor switching device;a freewheeling diode connected in parallel with the power semiconductor switching device, the freewheeling diode comprising a Schottky barrier diode of a wide bandgap semiconductor of SiC, GaN or diamond, a PiN diode, or a MPS diode in which a Schottky barrier diode and a PiN diode are combined; anda gate drive circuit of the power semiconductor switching device,wherein an on-gate resistance of the power semiconductor switching device is set smaller than an off-gate resistance thereof,wherein when a line inductance of the power semiconductor switching device and the gate drive circuit is denoted by Lg, a buried resistance of the power semiconductor switching device is denoted by Rgin, an input capacitance of the power semiconductor switching device is denoted by Cies, and an on-gate resistance of the power, semiconductor switching device is denoted by Rgon, the following condition is satisfied: Rgon>2⁢LgCies-Rginand wherein a capacitor is provided in parallel with the on-gate resistance of the power semiconductor switching device. 2. An inverter device comprising: a power semiconductor switching device;a freewheeling diode connected in parallel with the power semiconductor switching device, the freewheeling diode comprising a Schottky barrier diode of a wide bandgap semiconductor of SiC, GaN or diamond, a PiN diode, or a MPS diode in which a Schottky barrier diode and a PiN diode are combined; anda gate drive circuit of the power semiconductor switching device,wherein a first high-voltage side terminal of the power semiconductor switching device and a second high-voltage side terminal of the freewheeling diode are disposed independently, and a first inductance is disposed between the first high-voltage side terminal and the second high-voltage side terminal, andwherein a first low-voltage side terminal of the power semiconductor switching device and a second low-voltage side terminal of the freewheeling diode are disposed independently, and a second inductance is disposed between the first low-voltage side terminal and the second low-voltage side terminal. 3. The inverter device according to claim 2, wherein when a sum of a parasitic inductance is denoted by Ls, an output capacitance of the power semiconductor switching device and the freewheeling diode is denoted by Coes, an on resistance of the power semiconductor switching device is denoted by Ron IGBT, and an inductance between the high-voltage side terminal of the power semiconductor switching device and the high-voltage side terminal of the freewheeling diode is denoted by Lm, Ron IGBT satisfies the following condition: RonIGBT>2·LS+LmCoes. 4. An inverter device comprising: a power semiconductor switching device;a freewheeling diode connected in parallel with the power semiconductor switching device, the freewheeling diode comprising a Schottky barrier diode of a wide bandgap semiconductor of SiC, GaN or diamond, a PiN diode, or a MPS diode in which a Schottky barrier diode and a PiN diode are combined; anda gate drive circuit of the power semiconductor switching device,wherein a first high-voltage side terminal of the power semiconductor switching device and a second high-voltage side terminal of the freewheeling diode are disposed independently, and a first inductance is disposed between the first high-voltage side terminal and the second high-voltage side terminal, andwherein when a sum of a parasitic inductance is denoted by Ls, an output capacitance of the power semiconductor switching device and the freewheeling diode is denoted by Coes, an on resistance of the power semiconductor switching device is denoted by Ron IGBT, and an inductance between the high-voltage side terminal of the power semiconductor switching device and the high-voltage side terminal of the freewheeling diode is denoted by Lm, Ron IGBT satisfies the following condition: RonIGBT>2·LS+LmCoes.