초록 ▼

This invention provides composite semiconductor substrates and methods for fabricating such substrates. The composite structures include a semiconductor substrate, a semiconductor superstrate and an intermediate layer interposed between the substrate and the superstrate that comprises a material tha

This invention provides composite semiconductor substrates and methods for fabricating such substrates. The composite structures include a semiconductor substrate, a semiconductor superstrate and an intermediate layer interposed between the substrate and the superstrate that comprises a material that undergoes a structural transformation when subject to a suitable heat treatment. The methods provide such a heat treatment so that the intermediate layer becomes spongy or porous, being filled with numerous micro-bubbles or micro-cavities containing a gaseous phase. The composite semiconductor substrates with structurally-transformed intermediate layers have numerous applications.

대표청구항 ▼

1. A method for fabricating a composite semiconductor structure, the method comprising: providing an initial composite structure comprising at least one intermediate layer interposed between a substrate and a superstrate, the substrate and a superstrate comprising the same or different semiconductor

1. A method for fabricating a composite semiconductor structure, the method comprising: providing an initial composite structure comprising at least one intermediate layer interposed between a substrate and a superstrate, the substrate and a superstrate comprising the same or different semiconductor materials, and the intermediate layer comprising a CVD-deposited glass material having a composition whereby, when subjected to a suitable heat treatment, the material undergoes a structural transformation becoming spongy; andapplying a suitable heat treatment to the initial composite structure at a temperature in the range from 900° C. to 1200° C. so that the as-deposited intermediate layer becomes spongy consequent to the structural transformation,wherein the glass material comprises silicon oxide doped with phosphorous or silicon oxide doped with phosphorous and boron, andwherein the spongy transformation comprises the formation of microbubbles or microcavities containing a gaseous phase. 2. The method of claim 1 wherein the conditions of the suitable heat treatment are selected so that the composite structure does not split. 3. The method of claim 1 wherein at least some of the microbubbles or microcavities coalesce to form channels extending through the composite structure. 4. The method of claim 1 wherein intermediate layer, at the temperature of the suitable heat treatment, becomes plastically deformable. 5. The method of claim 1 wherein, during application of the suitable heat treatment, the thickness of the intermediate layer increases. 6. The method of claim 5 wherein the thickness of the intermediate layer subsequent to the heat treatment is between about 2 and about 4 times the thickness prior to the heat treatment. 7. The method of claim 1 wherein the glass material comprises silicon oxide doped with phosphorous. 8. The method of claim 1 wherein the glass material comprises silicon oxide doped with phosphorous so that the concentration of phosphorus is in the range from about 6% to about 14%. 9. The method of claim 8 wherein the silicon oxide is further doped with boron so that the concentration of boron is up to about 4%. 10. The method of claim 1 further comprising reducing the thickness of the superstrate. 11. The method of claim 1 further comprising applying forces to the composite structure to bring about splitting of the superstrate from the substrate at the intermediate layer. 12. The method of claim 11 wherein the forces are applied by a blade or water jet that is directed at the intermediate layer. 13. The method of claim 1 further comprising chemically attacking the intermediate layer to at least partially remove the intermediate layer between the substrate and the superstrate. 14. A method for fabricating a composite semiconductor structure, the method comprising: providing a substrate comprising a first semiconductor material;CVD-depositing an intermediate layer on a surface of the substrate, the intermediate layer comprising a glass material having a composition whereby, when subjected to a suitable heat treatment, the material undergoes a structural transformation becoming spongy; andapplying a suitable heat treatment at a temperature in the range from 900° C. to 1200° C. to the substrate and as-deposited intermediate layer so that the intermediate layer becomes spongy consequent to the structural transformation,wherein the glass material comprises silicon oxide doped with phosphorous or silicon oxide doped with phosphorous and boron, andwherein the spongy transformation comprises the formation of microbubbles or microcavities containing a gaseous phase. 15. The method of claim 14 further comprising: providing a superstrate comprising a second semiconductor material, the first and second semiconductor materials being the same or different; andbonding the superstrate to the structurally-transformed intermediate layer. 16. The method of claim 15 wherein the first and second semiconductor materials comprise one or more of Si, Ge, a III-V compound, GaN, or SiC. 17. The method of claim 15 further comprising: providing a thermal oxide film on the surface of the substrate layer prior to depositing the intermediate layer; andproviding a thermal oxide film on the surface of the superstrate prior to bonding to the intermediate layer. 18. The method of claim 15, wherein the intermediate layer comprises a phosphosilicate glass material having a thickness between one and ten microns. 19. The method of claim 18, wherein the superstrate has a thickness less than one micron. 20. The method of claim 15, wherein the intermediate layer comprises a borophosphosilicate glass material having a thickness between one and ten microns.