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An active region, a source region, and a drain region are formed on a single crystal semiconductor substrate or a single crystal semiconductor thin film. Impurity regions called pinning regions are formed in striped form in the active region so as to reach both of the source region and the drain reg

An active region, a source region, and a drain region are formed on a single crystal semiconductor substrate or a single crystal semiconductor thin film. Impurity regions called pinning regions are formed in striped form in the active region so as to reach both of the source region and the drain region. Regions interposed between the pinning regions serve as channel forming regions. A tunnel oxide film, a floating gate, a control gate, etc. are formed on the above structure. The impurity regions prevent a depletion layer from expanding from the source region toward the drain region.

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1. A semiconductor device comprising: a single crystal silicon substrate;a buried oxide film on the single crystal silicon substrate;a single crystal silicon layer on the buried oxide film, the single crystal silicon layer including a source region, a drain region and a channel forming region;an oxi

1. A semiconductor device comprising: a single crystal silicon substrate;a buried oxide film on the single crystal silicon substrate;a single crystal silicon layer on the buried oxide film, the single crystal silicon layer including a source region, a drain region and a channel forming region;an oxide film adjacent to a side surface of the single crystal silicon layer;a gate insulating film on the channel forming region;a gate electrode on the gate insulating film;a side wall comprising silicon nitride adjacent to a side surface of the gate electrode; anda silicon nitride film formed over the gate electrode,wherein the channel forming region has a channel length of less than 0.35 μm,wherein the silicon nitride film is in contact with the side wall, andwherein the single crystal silicon layer has a thickness of 100-2,000 Å. 2. The semiconductor device according to claim 1 wherein the buried oxide film has a thickness of 0.05-0.5 μm. 3. The semiconductor device according to claim 1 further comprising impurity regions for pinning of a depletion layer developing from the drain region toward the channel forming region and the source region. 4. The semiconductor device according to claim 1 wherein the gate insulating film contains a halogen element. 5. A semiconductor device comprising: a single crystal silicon substrate;a buried oxide film on the single crystal silicon substrate;a single crystal silicon layer on the buried oxide film, the single crystal silicon layer including a source region, a drain region and a channel forming region;an oxide film adjacent to a side surface of the single crystal silicon layer;a gate insulating film on the channel forming region;a gate electrode comprising polysilicon on the gate insulating film;a side wall comprising silicon nitride adjacent to a side surface of the gate electrode; anda silicon nitride film formed over the gate electrode,wherein each of an upper portion of the gate electrode, an upper portion of the source region, and an upper portion of the drain region comprises metal silicide,wherein the silicon nitride film is in contact with the upper portions,wherein the channel forming region has a channel length of less than 0.35 μm, andwherein the single crystal silicon layer has a thickness of 100-2,000 Å. 6. The semiconductor device according to claim 5 wherein the buried oxide film has a thickness of 0.05-0.5 μm. 7. The semiconductor device according to claim 5 further comprising impurity regions for pinning of a depletion layer developing from the drain region toward the channel forming region and the source region. 8. The semiconductor device according to claim 5 wherein the gate insulating film contains a halogen element. 9. The semiconductor device according to claim 5 wherein the metal silicide is titanium silicide. 10. A semiconductor device comprising: a single crystal silicon substrate;a buried oxide film on the single crystal silicon substrate;a single crystal silicon layer on the buried oxide film, the single crystal silicon layer including a source region, a drain region and a channel forming region;a thermal oxide film adjacent to a side surface of the single crystal silicon layer;a gate insulating film on the channel forming region;a gate electrode on the gate insulating film;a side wall comprising silicon nitride adjacent to a side surface of the gate electrode; anda silicon nitride film formed over the gate electrode,wherein the channel forming region has a channel length of less than 0.35 μm,wherein the silicon nitride film is in contact with the side wall, andwherein the single crystal silicon layer has a thickness of 100-2,000 Å. 11. The semiconductor device according to claim 10 wherein the buried oxide film has a thickness of 0.05-0.5 μm. 12. The semiconductor device according to claim 10 further comprising impurity regions for pinning of a depletion layer developing from the drain region toward the channel forming region and the source region. 13. The semiconductor device according to claim 10 wherein the gate insulating film contains a halogen element. 14. A semiconductor device comprising: a single crystal silicon substrate;a buried oxide film on the single crystal silicon substrate;a single crystal silicon layer on the buried oxide film, the single crystal silicon layer including a source region, a drain region and a channel forming region;a thermal oxide film adjacent to a side surface of the single crystal silicon layer;a gate insulating film on the channel forming region;a gate electrode comprising polysilicon on the gate insulating film;a side wall comprising silicon nitride adjacent to a side surface of the gate electrode; anda silicon nitride film formed over the gate electrode,wherein each of an upper portion of the gate electrode, an upper portion of the source region, and an upper portion of the drain region comprises metal silicide,wherein the channel forming region has a channel length of less than 0.35 μm,wherein the silicon nitride film is in contact with the upper portions, andwherein the single crystal silicon layer has a thickness of 100-2,000 Å. 15. The semiconductor device according to claim 14 wherein the buried oxide film has a thickness of 0.05-0.5 μm. 16. The semiconductor device according to claim 14 further comprising impurity regions for pinning of a depletion layer developing from the drain region toward the channel forming region and the source region. 17. The semiconductor device according to claim 14 wherein the gate insulating film contains a halogen element. 18. The semiconductor device according to claim 14 wherein the metal silicide is titanium silicide.