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Integrated seal for high-temperature electrochemical device 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01M-004/00
출원번호 US-0988297 (2008-06-12)
등록번호 US-8486580 (2013-07-16)
국제출원번호 PCT/US2008/066737 (2008-06-12)
§371/§102 date 20110107 (20110107)
국제공개번호 WO2009/128849 (2009-10-22)
발명자 / 주소
  • Tucker, Michael C.
  • Jacobson, Craig P.
출원인 / 주소
  • The Regents of the University of California
대리인 / 주소
    Weaver Austin Villeneuve & Sampson LLP
인용정보 피인용 횟수 : 4  인용 특허 : 95

초록

The present invention provides electrochemical device structures having integrated seals, and methods of fabricating them. According to various embodiments the structures include a thin, supported electrolyte film with the electrolyte sealed to the support. The perimeter of the support is self-seale

대표청구항

1. An electrochemical device structure, comprising: first and second electrodes separated by a dense electrolyte;a support comprising dense metal and porous metal support regions, wherein said dense metal and porous metal support regions share a dense support/porous support interface;the dense elect

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  1. Annunziata, Anthony J.; Chen, Ching-Tzu; Chudow, Joel D., Thin film device with protective layer.
  2. Annunziata, Anthony J.; Chen, Ching-Tzu; Chudow, Joel D., Thin film device with protective layer.
  3. Annunziata, Anthony J.; Chen, Ching-Tzu; Chudow, Joel D., Thin film device with protective layer.
  4. Annunziata, Anthony J.; Chen, Ching-Tzu; Chudow, Joel D., Thin film device with protective layer.
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