IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0598891
(2008-05-02)
|
등록번호 |
US-8487525
(2013-07-16)
|
우선권정보 |
KR-10-2007-0043799 (2007-05-04) |
국제출원번호 |
PCT/KR2008/002512
(2008-05-02)
|
§371/§102 date |
20100204
(20100204)
|
국제공개번호 |
WO2008/136619
(2008-11-13)
|
발명자
/ 주소 |
|
출원인 / 주소 |
- Seoul Semiconductor Co., Ltd.
|
대리인 / 주소 |
H.C. Park & Associates, PLC
|
인용정보 |
피인용 횟수 :
5 인용 특허 :
0 |
초록
▼
According to the present invention, there is provided a light emitting device that includes at least one laser diode configured to emit light in at least one first wavelength region selected from spectrum regions including ultraviolet light, blue light, and green light; and a light emitting material
According to the present invention, there is provided a light emitting device that includes at least one laser diode configured to emit light in at least one first wavelength region selected from spectrum regions including ultraviolet light, blue light, and green light; and a light emitting material for emitting light in a second wavelength region by the light emitted from the laser diode, the second wavelength region being different from the first wavelength region. A color-mixed light is made by the light in the first wavelength region and the light in the second wavelength region. Since the laser diode is used as a light emission source, the color-mixed light implemented by the light emitting device has high linearity, so that it may be effectively used for long-distance illumination and flash.
대표청구항
▼
1. A light emitting device, comprising: a substrate comprising a recessed region formed in an upper surface thereof;a laser diode disposed in the recessed region and configured to emit ultraviolet light, blue light, or green light;a first layer disposed over the laser diode and comprising a first li
1. A light emitting device, comprising: a substrate comprising a recessed region formed in an upper surface thereof;a laser diode disposed in the recessed region and configured to emit ultraviolet light, blue light, or green light;a first layer disposed over the laser diode and comprising a first light emitting material configured to emit light of a first wavelength when excited by the light emitted from the laser diode, andan optical lens disposed on the substrate and configured to support the first layer,wherein the first layer extends laterally only within the perimeter of the recessed region. 2. The light emitting device of claim 1, wherein the light emitting material comprises a compound containing copper as a host lattice component. 3. The light emitting device of claim 2, wherein the light emitting material comprises a material represented by a Chemical Formula of a(MIO).b(MIIO).c(MIIIA).d(MIII2O).e(MIV2O3).f(MVoOp).g(SiO2).h(MVIxOy)where MI comprises at least one element selected from the group consisting of Pb and Cu; MII comprises at least one element selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd and Mn; MIII comprises at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Au and Ag; MIV comprises at least one element selected from the group consisting of Al, Ga and In; MV comprises at least one element selected from the group consisting of Ge, V, Nd, Ta, W, Mo, Ti, Zr and Hf; MVI comprises at least one element selected from the group consisting of Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A comprises at least one element selected from the group consisting of F, CI, Br and I; and a, b, c, d, e, f, g, h, o, p, x and y are set in ranges of 0≦a≦2, 0≦b≦8, 0≦c≦4, 0≦d≦2, 0≦e≦2, 0≦f≦2, 0≦g≦10, 0≦h≦5, 1≦o≦2, 1≦p≦5, 1≦x≦2 and 1≦y≦5, respectively. 4. The light emitting device of claim 3, wherein the light emitting material comprises a material represented by a Chemical Formula of ((Br,Sr,Ca)1−x,(Pb,Cu)x)2SiO4:Eu,Bwhere B comprises at least one element selected from the group consisting of Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; x is set in a range from 0 to 1; and Eu and B are set in a range from 0 to 0.2. 5. The light emitting device of claim 1, wherein the light emitting material comprises at least one selected from the group consisting of sulfide, nitride, oxynitride, thiogallate, silicate, orthosilicate, and garnet. 6. The light emitting device of claim 1, wherein the substrate comprises a heat sink and a lead terminal. 7. The light emitting device of claim 1, wherein the first layer is disposed on the lower or upper surface of the optical lens. 8. The light emitting device of claim 7, further comprising a second layer disposed on the first layer and comprises a second light emitting material configured to emit light of a second wavelength when excited by the light emitted from the laser diode. 9. The light emitting device of claim 8, wherein: the optical lens comprises an optical pattern disposed on the upper surface of the optical lens; andthe first and second layers are disposed on the lower surface of the optical lens. 10. The light emitting device of claim 8, wherein; the optical lens comprises an optical pattern disposed on the lower surface of the optical lens; andthe first and second layers are disposed on the lower surface of the optical lens. 11. The light emitting device of claim 8, wherein: the optical lens comprises: a lower portion disposed on the substrate and comprising an optical pattern disposed on the lower surface thereof; andan upper portion disposed on the lower portion and comprising an optical pattern disposed on the upper surface thereof; andthe first and second layers are disposed between the upper and lower portions of the optical lens. 12. The light emitting device of claim 11, wherein the first and second layers are disposed within a recessed region formed in the upper surface of the lower portion of the optical lens. 13. The light emitting device of claim 1, further comprising a member to couple the optical lens with the substrate. 14. The light emitting device of claim 8, wherein: the first layer is disposed between the second layer and the laser diode; andthe first wavelength is longer than the second wavelength. 15. The light emitting device of claim 9, wherein the first and second layers are disposed within a recessed region formed in the lower surface of the optical lens. 16. The light emitting device of claim 10, wherein the first and second layers are disposed within a recessed region formed in the upper surface of the optical lens. 17. The light emitting device of claim 7, wherein the first layer is disposed on the lower surface of the optical lens and substantially covers the recessed region of the substrate. 18. The light emitting device of claim 7, wherein the first layer is disposed on the upper surface of the optical lens and substantially covers the recessed region of the substrate.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.