When there is a short circuit failure between the gate and emitter of a main switching element such as an IGBT, the temperature of a turn-on gate resistor or turn-off gate resistor is detected by a thermistor, and a drive circuit is protected by turning off a turn-on gate drive switching element or
When there is a short circuit failure between the gate and emitter of a main switching element such as an IGBT, the temperature of a turn-on gate resistor or turn-off gate resistor is detected by a thermistor, and a drive circuit is protected by turning off a turn-on gate drive switching element or a turn-off gate drive switching element. Furthermore, instead of detecting the temperature of the turn-on gate resistor or turn-off gate resistor, a thermistor is connected in series with the turn-on gate drive switching element or turn-off gate drive switching element, the resistance change corresponding to a change in temperature of the thermistor is detected, and the drive circuit is protected by turning off the turn-on gate drive switching element or turn-off gate drive switching element.
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1. A semiconductor drive device characterized by including: a turn-on drive circuit including a forward biasing power source, a first switching element, and a turn-on gate resistor for turning on a semiconductor element; and a turn-off drive circuit including a reverse biasing power source, a second
1. A semiconductor drive device characterized by including: a turn-on drive circuit including a forward biasing power source, a first switching element, and a turn-on gate resistor for turning on a semiconductor element; and a turn-off drive circuit including a reverse biasing power source, a second switching element, and a turn-off gate resistor for turning off the semiconductor element, wherein the forward biasing power source and reverse biasing power source are connected in series, a first series circuit of a first thermistor thermally joined to the turn-on gate resistor and a first resistor connected in series is connected between the positive electrode of the forward biasing power source and the negative electrode of the reverse biasing power source, or between the positive electrode and negative electrode of the forward biasing power source, and a second series circuit of a second thermistor thermally joined to the turn-off gate resistor and a second resistor connected in series is connected between the positive electrode of the forward biasing power source and the negative electrode of the reverse biasing power source, or between the positive electrode and negative electrode of the reverse biasing power source, and wherein there is provided means of turning off the first or second switching element when the temperature of either one of the turn-on gate resistor or turn-off gate resistor rises to or above a predetermined value. 2. The semiconductor drive device according to claim 1, characterized in that the means of turning off the first switching element is a third switching element wherein a control terminal is connected to an internal connection point of a first series circuit in which one end of the first thermistor is connected to the positive electrode of the forward biasing power source and one end of the first resistor is connected to the negative electrode of the reverse biasing power source, one main terminal is connected to the positive electrode of the forward biasing power source, and the other main terminal is connected to a control terminal of the first switching element. 3. The semiconductor drive device according to claim 1, characterized in that the means of turning off the second switching element is a fourth switching element wherein a control terminal is connected to an internal connection point of a second series circuit in which one end of the second thermistor is connected to the negative electrode of the reverse biasing power source and one end of the second resistor is connected to the positive electrode of the forward biasing power source, one main terminal is connected to the negative electrode of the reverse biasing power source, and the other main terminal is connected to a control terminal of the second switching element. 4. The semiconductor drive device according to claim 1, characterized in that the third switching element is a P-channel type MOSFET. 5. The semiconductor drive device according to claim 1, characterized in that the third switching element is a PNP type transistor. 6. The semiconductor drive device according to claim 1, characterized in that a diode is connected between a main terminal of the third switching element and the control terminal of the first switching element, and a series circuit of a primary terminal of a photocoupler and a resistor is connected between the connection point of the main terminal of the third switching element and diode and the negative electrode of the reverse biasing power source, or between the connection point of the main terminal of the third switching element and diode and the negative electrode of the forward biasing power source. 7. The semiconductor drive device according to claim 1, characterized in that the fourth switching element is an N-channel type MOSFET. 8. The semiconductor drive device according to claim 1, characterized in that the fourth switching element is a PNP type transistor. 9. The semiconductor drive device according to claim 1, characterized in that a diode is connected between a main terminal of the fourth switching element and the control terminal of the second switching element, and a series circuit of a primary terminal of a photocoupler and a resistor is connected between the connection point of the diode and fourth switching element and the positive electrode of the forward biasing power source, or between the connection point of the diode and fourth switching element and the positive electrode of the reverse biasing power source. 10. A semiconductor drive device characterized by including: a turn-on drive circuit including a forward biasing power source, a first switching element, and a turn-on gate resistor for turning on a semiconductor element; and a turn-off drive circuit including a reverse biasing power source, a second switching element, and a turn-off gate resistor for turning off the semiconductor element, wherein the forward biasing power source and reverse biasing power source are connected in series, a first thermistor being connected in series with the first switching element, and a second thermistor is connected in series with the second switching element, and wherein there is provided means of turning off the first or second switching element when the temperature of either one of the first thermistor or second thermistor rises to or above a predetermined value. 11. The semiconductor drive device according to claim 10, characterized in that the means of turning off the first switching element is a third switching element wherein one end of the first thermistor and one main terminal are connected to the positive electrode of the forward biasing power source, the series connection point of the first thermistor and first switching element is connected to a control terminal, a resistor is connected between the control terminal and the negative electrode of the reverse biasing power source or the negative electrode of the forward biasing power source, and the other main terminal is connected to a control terminal of the first switching element. 12. The semiconductor drive device according to claim 10, characterized in that the means of turning off the second switching element is a fourth switching element wherein one end of the second thermistor and one main terminal are connected to the negative electrode of the reverse biasing power source, the series connection point of the second thermistor and second switching element is connected to a control terminal, a resistor is connected between the control terminal and the positive electrode of the reverse biasing power source or the positive electrode of the forward biasing power source, and the other main terminal is connected to a control terminal of the second switching element. 13. The semiconductor drive device according to claim 10, characterized in that the third switching element is a P-channel type MOSFET. 14. The semiconductor drive device according to claim 10, characterized in that the third switching element is a PNP type transistor. 15. The semiconductor drive device according to claim 10, characterized in that a diode is connected between a main terminal of the third switching element and the control terminal of the first switching element, and a series circuit of a primary terminal of a photocoupler and a resistor is connected between the connection point of the main terminal of the third switching element and diode and the negative electrode of the reverse biasing power source or the negative electrode of the forward biasing power source. 16. The semiconductor drive device according to claim 10, characterized in that the fourth switching element is an N-channel type MOSFET. 17. The semiconductor drive device according to claim 10, characterized in that the fourth switching element is a PNP type transistor. 18. The semiconductor drive device according to claim 10, characterized in that a diode is connected between a main terminal of the fourth switching element and the control terminal of the second switching element, and a series circuit of a primary terminal of a photocoupler and a resistor is connected between the connection point of the diode and fourth switching element and the positive electrode of the forward biasing power source or the positive electrode of the reverse biasing power source.
Hasegawa Hiroyuki,JPX ; Kurosu Toshiki,JPX ; Sugayama Shigeru,JPX, Temperature sensing circuit for voltage drive type semiconductor device and temperature sensing method therefore, and drive-device and voltage drive type semiconductor device using the same.
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