초록 ▼

A donor silicon wafer may be bonded to a substrate and a lamina cleaved from the donor wafer. A photovoltaic cell may be formed from the lamina bonded to the substrate. An intermetal stack is described that is optimized for use in such a cell. The intermetal stack may include a transparent conductiv

A donor silicon wafer may be bonded to a substrate and a lamina cleaved from the donor wafer. A photovoltaic cell may be formed from the lamina bonded to the substrate. An intermetal stack is described that is optimized for use in such a cell. The intermetal stack may include a transparent conductive oxide layer serving as a quarter-wave plate, a low resistance layer, an adhesion layer to help adhesion to the receiver element, and may also include a barrier layer to prevent or impede unwanted diffusion within the stack.

대표청구항 ▼

1. A method comprising the steps of: providing a substantially crystalline semiconductor lamina and a receiver element, wherein a transparent conductive oxide layer and a metal layer or stack are disposed between the lamina and the receiver element;heating the lamina, receiver element, and transpare

1. A method comprising the steps of: providing a substantially crystalline semiconductor lamina and a receiver element, wherein a transparent conductive oxide layer and a metal layer or stack are disposed between the lamina and the receiver element;heating the lamina, receiver element, and transparent conductive oxide and metal layer or stack to at least about 450 degrees C.; andfabricating a photovoltaic cell, wherein the photovoltaic cell comprises the lamina. 2. The method of claim 1 wherein the receiver element comprises borosilicate glass. 3. The method of claim 1 wherein the substantially crystalline lamina comprises monocrystalline silicon. 4. The method of claim 1 wherein, during the heating step, the lamina, receiver element, and transparent conductive oxide are heated to at least 600 degrees C. 5. The method of claim 1 wherein, during the heating step, the lamina, receiver element, and transparent conductive oxide are heated to at least 800 degrees C. 6. The method of claim 1 wherein the transparent conductive oxide comprises indium tin oxide, tin oxide, zinc oxide, aluminum-doped zinc oxide, or tin-doped antimony dioxide. 7. The method of claim 1 wherein the metal layer or stack is disposed between the transparent conductive oxide and the receiver element. 8. The method of claim 1 wherein the metal layer or stack comprises a layer of titanium or a titanium alloy. 9. The method of claim 1 wherein, in the photovoltaic cell, the lamina has a thickness less than about ten microns. 10. The method of claim 1 wherein the surface of the receiver element facing the transparent conductive oxide and metal layer or stack is textured. 11. A method comprising the steps of: providing a semiconductor donor body having a cleave plane defined within;affixing the semiconductor donor body to a receiver element, wherein a transparent conductive oxide and a metal layer or stack are disposed between the donor body and the receiver element;cleaving a semiconductor lamina from the semiconductor donor body at the cleave plane, wherein the lamina remains affixed to the receiver element;heating the lamina, receiver element, and transparent conductive oxide and metal layer or stack to at least about 450 degrees C.; andfabricating a photovoltaic cell, wherein the photovoltaic cell comprises the lamina. 12. The method of claim 11 wherein, between the affixing step and completion of the fabricating step, at some point the transparent conductive oxide and the metal layer or stack are subjected to a temperature of about 600 degrees C. or more. 13. The method of claim 11 wherein, between the affixing step and completion of the fabricating step, at some point the transparent conductive oxide and the metal layer or stack are subjected to a temperature of about 800 degrees C. or more. 14. The method of claim 11 wherein the semiconductor lamina is substantially crystalline. 15. The method of claim 11 wherein the semiconductor lamina is monocrystalline silicon. 16. The method of claim 11 wherein the receiver element comprises glass. 17. The method of claim 11 further comprising, before the affixing step, implanting hydrogen and/or helium ions into the semiconductor donor body to define the cleave plane. 18. The method of claim 11 wherein the transparent conductive oxide comprises indium tin oxide, tin oxide, or zinc oxide. 19. The method of claim 11 wherein the lamina has a thickness between about one and about six microns.