초록 ▼

The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a

The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.

대표청구항 ▼

1. A method for manufacturing a display device, the method comprising the steps of: forming a metal film and a metal oxide film over a first substrate;forming a peel-off layer over the metal film and the metal oxide film, the peel-off layer comprising a transistor, a first electrode in electrical co

1. A method for manufacturing a display device, the method comprising the steps of: forming a metal film and a metal oxide film over a first substrate;forming a peel-off layer over the metal film and the metal oxide film, the peel-off layer comprising a transistor, a first electrode in electrical contact with one of a source and a drain of the transistor, and an insulating layer;forming a water-soluble resin over the peel-off layer;fixing a tape over the water-soluble resin, the tape having a feature of deterioration in adhesiveness by being irradiated with an ultraviolet ray;separating the first substrate from the peel-off layer by using a physical means;fixing a second substrate under the peel-off layer by using an adhesive;irradiating an ultraviolet ray to the tape;separating the tape from the water-soluble resin;removing the water-soluble resin by using water;forming a light emitting layer on the peel-off layer by evaporation;forming a second electrode on the light emitting layer;forming a sealing film over the second electrode. 2. The method for manufacturing a display device according to claim 1, wherein a heat treatment is applied to the metal oxide film to crystallize the metal oxide film prior to the step of separating the first substrate. 3. The method for manufacturing a display device according to claim 1, further comprising a step of forming a UV protective film. 4. The method for manufacturing a display device according to claim 1, further comprising a step of forming a color filter,wherein the light emitting layer is a white light emitting layer. 5. The method for manufacturing a display device according to claim 1, wherein the display device is a bottom-emission flexible light-emitting device. 6. The method for manufacturing a display device according to claim 1, wherein the second electrode comprises ITO, andwherein the display device is a top-emission flexible light-emitting device. 7. The method for manufacturing a display device according to claim 1, wherein the display device is a bottom-emission flexible light-emitting device. 8. A method for manufacturing a display device, the method comprising the steps of: forming a metal film comprising tungsten and a metal oxide film comprising tungsten over a glass substrate;forming a peel-off layer over the metal film and the metal oxide film, the peel-off layer comprising a transistor, a first electrode in electrical contact with one of a source and a drain of the transistor, and an insulating layer;forming a water-soluble resin over the peel-off layer;fixing a tape over the water-soluble resin, the tape having a feature of deterioration in adhesiveness by being irradiated with an ultraviolet ray;separating the glass substrate from the peel-off layer by using a physical means;fixing a film substrate under the peel-off layer by using an epoxy resin system adhesive;irradiating an ultraviolet ray to the tape;separating the tape from the water-soluble resin;removing the water-soluble resin by using water;forming a light emitting layer on the peel-off layer by evaporation;forming a second electrode on the light emitting layer;forming a sealing film over the second electrode. 9. The method for manufacturing a display device according to claim 8, wherein a heat treatment is applied to the metal oxide film to crystallize the metal oxide film prior to the step of separating the glass substrate. 10. The method for manufacturing a display device according to claim 8, further comprising a step of forming a UV protective film. 11. The method for manufacturing a display device according to claim 8, further comprising a step of forming a color filter,wherein the light emitting layer is a white light emitting layer. 12. The method for manufacturing a display device according to claim 8, wherein the display device is a bottom-emission flexible light-emitting device. 13. The method for manufacturing a display device according to claim 8, wherein the second electrode comprises ITO, andwherein the display device is a top-emission flexible light-emitting device. 14. The method for manufacturing a display device according to claim 8, wherein the display device is a bottom-emission flexible light-emitting device. 15. A method for manufacturing a display device, the method comprising the steps of: forming a metal film comprising tungsten and a metal oxide film comprising tungsten over a glass substrate;forming a peel-off layer over the metal film and the metal oxide film, the peel-off layer comprising a transistor, a first electrode, and an insulating layer comprising an organic material covering edge portions of the first electrode;forming a water-soluble resin over the peel-off layer;fixing a tape over the water-soluble resin, the tape having a feature of deterioration in adhesiveness by being irradiated with an ultraviolet ray;separating the glass substrate from the peel-off layer by using a physical means;fixing a film substrate under the peel-off layer by using an epoxy resin system adhesive;irradiating an ultraviolet ray to the tape;separating the tape from the water-soluble resin;removing the water-soluble resin by using water;forming a white light emitting layer on the peel-off layer by evaporation;forming a second electrode on the white light emitting layer; andforming a sealing film over the second electrode. 16. The method for manufacturing a display device according to claim 15, wherein a heat treatment is applied to the metal oxide film to crystallize the metal oxide film prior to the step of separating the glass substrate. 17. The method for manufacturing a display device according to claim 15, further comprising a step of forming a UV protective film. 18. The method for manufacturing a display device according to claim 15, further comprising a step of forming a color filter. 19. The method for manufacturing a display device according to claim 15, wherein the display device is a bottom-emission flexible light-emitting device. 20. The method for manufacturing a display device according to claim 15, wherein the second electrode comprises ITO, andwherein the display device is a top-emission flexible light-emitting device. 21. The method for manufacturing a display device according to claim 15, wherein the display device is a bottom-emission flexible light-emitting device. 22. A method for manufacturing a light emitting device, the method comprising the steps of: forming a metal layer over a first substrate;forming a metal oxide film and a base film on the metal layer, the metal oxide film in contact with the metal layer;forming a semiconductor film over the base film;performing a thermal treatment to crystallize the metal oxide film and the semiconductor film;forming a source region and a drain region in the semiconductor film after having performed the thermal treatment;forming an electrode electrically connected to one of the source region and the drain region;forming an insulating layer covering an end of the electrode;fixing a second substrate over the insulating layer;separating the first substrate from the semiconductor film;fixing a third substrate under the semiconductor film;separating the second substrate from the electrode;forming a light emitting layer on the electrode; andforming a pixel electrode on the light emitting layer. 23. The method for manufacturing a light emitting device according to claim 22, further comprising the step of forming a water-soluble resin or a thermosetting resin before fixing the second substrate. 24. The method for manufacturing a light emitting device according to claim 22, wherein the third substrate is a plastic substrate or a substrate with flexibility. 25. The method for manufacturing a light emitting device according to claim 22, wherein the metal layer is a tungsten layer and the metal oxide film is a tungsten oxide layer. 26. The method for manufacturing a light emitting device according to claim 22, wherein the metal layer is a tungsten layer and the metal oxide film is a tungsten oxide layer, andwherein after the step of separating the first substrate, a concentration in WO3 is higher than a concentration of WO2 in metal oxide remaining on the side of the semiconductor film. 27. The method for manufacturing a light emitting device according to claim 22, wherein the first substrate, and the semiconductor film are divided prior to the step of separating the first substrate from the semiconductor film. 28. A method for manufacturing a light emitting device, the method comprising the steps of: forming a metal layer over a first substrate;forming a metal oxide film and a base film on the metal layer, the metal oxide film in contact with the metal layer;forming a semiconductor film over the base film;performing a thermal treatment to crystallize the metal oxide film and the semiconductor film;forming a source region and a drain region in the semiconductor film after having performed the thermal treatment;forming an electrode electrically connected to one of the source region and the drain region;forming an insulating layer covering an end of the electrode;fixing a second substrate over the insulating layer;separating the first substrate from the semiconductor film from the inside of the crystallized metal oxide film or from boundaries of both sides of the metal oxide film;fixing a third substrate under the semiconductor film;separating the second substrate from the electrode;forming a light emitting layer on the electrode; andforming a pixel electrode on the light emitting layer. 29. The method for manufacturing a light emitting device according to claim 28, further comprising the step of forming a water-soluble resin or a thermosetting resin before fixing the second substrate. 30. The method for manufacturing a light emitting device according to claim 28, wherein the third substrate is a plastic substrate or a substrate with flexibility. 31. The method for manufacturing a light emitting device according to claim 28, wherein the metal layer is a tungsten layer and the metal oxide film is a tungsten oxide layer. 32. The method for manufacturing a light emitting device according to claim 28, wherein the metal layer is a tungsten layer and the metal oxide film is a tungsten oxide layer, andwherein after the step of separating the first substrate, a concentration in WO3 is higher than a concentration of WO2 in metal oxide remaining on the side of the semiconductor film. 33. The method for manufacturing a light emitting device according to claim 28, wherein the first substrate, and the semiconductor film are divided prior to the step of separating the first substrate from the semiconductor film.