IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0214898
(2011-08-22)
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등록번호 |
US-8513758
(2013-08-20)
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발명자
/ 주소 |
- Tian, Hui
- Sargent, Edward
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출원인 / 주소 |
- InVisage Technologies, Inc.
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대리인 / 주소 |
Schwegman, Lundberg & Woessner, P.A.
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인용정보 |
피인용 횟수 :
18 인용 특허 :
45 |
초록
▼
A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensiti
A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
대표청구항
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1. A sensor comprising: at least one optically sensitive layer having closely-packed semiconductor nanoparticle cores, each core being partially covered with an incomplete shell, the shell to produce trap states having substantially a single time constant; anda circuit comprising at least one node i
1. A sensor comprising: at least one optically sensitive layer having closely-packed semiconductor nanoparticle cores, each core being partially covered with an incomplete shell, the shell to produce trap states having substantially a single time constant; anda circuit comprising at least one node in electrical communication with the optically sensitive layer, the circuit to store an electrical signal proportional to the intensity of light incident on the optically sensitive layer during an integration period, a non-linear relationship to exist between electrical characteristics of the optically sensitive layer and the intensity of light absorbed by the optically sensitive layer. 2. The sensor of claim 1, wherein the optically sensitive layer can be biased as both a current sink and a current source. 3. The sensor of claim 1, wherein a continuous function represents the non-linear relationship. 4. The sensor of claim 1, wherein the nanoparticle cores comprise PbS partially covered with a shell comprising PbSO3. 5. The sensor of claim 1, wherein the nanoparticle cores are passivated using ligands of at least two substantially different lengths. 6. The sensor of claim 1, wherein the nanoparticle cores are passivated using at least one ligand of at least one length. 7. The sensor of claim 1, wherein the nanoparticle cores are passivated and crosslinked using at least one crosslinking molecule of at least one length. 8. The sensor of claim 7, wherein the crosslinking molecule is a conductive crosslinker. 9. The sensor of claim 1, wherein each nanoparticle core is covered with a shell, where the shell comprises PbSO3. 10. The sensor of claim 1, wherein the nanoparticle cores comprise PbS that is partially oxidized and substantially lacking in PbSO4 (lead sulfate). 11. The sensor of claim 1, wherein at least one optically sensitive layer comprises a nanocrystalline solid, wherein at least a portion of a surface of the nanocrystalline solid is oxidized. 12. The sensor of claim 11, wherein a composition of the nanocrystalline solid excludes a first set of native oxides and includes a second set of native oxides. 13. The sensor of claim 12, wherein the first set of native oxides includes PbSO4 (lead sulfate) and the second set of native oxides includes PbSO3. 14. The sensor of claim 11, wherein trap states of the nanocrystalline solid provide persistence, wherein an energy to escape from a predominant trap state is less than or equal to approximately 0.1 eV. 15. The sensor of claim 14, comprising a non-predominant trap state, wherein an energy to escape from the non-predominant trap state is greater than or equal to approximately 0.2 eV. 16. The sensor of claim 1, comprising a continuous transparent layer, the continuous transparent layer comprising substantially transparent material, wherein the continuous transparent layer at least partially covers the optically sensitive layer. 17. The sensor of claim 1, comprising an adhesion layer anchoring constituents of the optically sensitive layer to circuitry of the integrated circuit. 18. The sensor of claim 1, wherein a second optically sensitive layer comprises a wavelength-selective light-absorbing material, wherein the first optically sensitive layer comprises a photoconductive material. 19. The sensor of claim 1, comprising an array of curved optical elements that determine a distribution of intensity across the optically sensitive layers. 20. The sensor of claim 1, wherein at least one optically sensitive layer comprises substantially fused nanocrystal cores having a dark current density less than approximately 0.1 nA/cm2. 21. The sensor of claim 1, wherein the circuit is an integrated circuit. 22. The sensor of claim 21, wherein a minimum feature spacing of the integrated circuit is in a range of approximately 100 nm to 200 um. 23. The sensor of claim 1, wherein the circuit is a complementary metal oxide semiconductor (CMOS) integrated circuit. 24. The sensor of claim 1, wherein a rate of the current flow through the optically sensitive layer has a non-linear relationship with the intensity of light absorbed by the optically sensitive layer. 25. The sensor of claim 1, wherein a gain of the optically sensitive layer has a non-linear relationship with the intensity of light absorbed by the optically sensitive layer. 26. The sensor of claim 1, wherein the optically sensitive layer has photoconductive gain when a voltage difference is applied across the optically sensitive layer and the optically sensitive layer is exposed to light. 27. The sensor of claim 1, wherein persistence of the optically sensitive layer is approximately in a range of 1 ms to 200 ins. 28. The sensor of claim 1, wherein the sensor is a non-rectifying device. 29. The sensor of claim 1, wherein the optically sensitive layer has a surface area determined by a width dimension and a length dimension. 30. The sensor of claim 29, wherein the width dimension is approximately 2 um. 31. The sensor of claim 29, wherein the length dimension is approximately 2 um. 32. The sensor of claim 29, wherein the width dimension is approximately 2 um and the length dimension is approximately 2 um. 33. The sensor of claim 29, wherein the width dimension is less than approximately 2 um. 34. The sensor of claim 29, wherein the length dimension is less than approximately 2 um. 35. The sensor of claim 29, wherein the width dimension is less than approximately 2 um and the length dimension is less than approximately 2 um. 36. The sensor of claim 1, wherein the optically sensitive layer comprises a continuous film of interconnected nanocrystal particles. 37. The sensor of claim 36, wherein the nanocrystal particles comprise a plurality of nanocrystal cores and a shell over the plurality of nanocrystal cores. 38. The sensor of claim 37, wherein the plurality of nanocrystal cores are fused. 39. The sensor of claim 37, wherein a physical proximity of the nanocrystal cores of adjacent nanocrystal particles provides electrical communication between the adjacent nanocrystal particles. 40. The sensor of claim 39, wherein the physical proximity includes a separation distance of less than approximately 0.5 nm. 41. The sensor of claim 39, wherein the electrical communication includes a hole mobility of at least approximately 1E-5 square centimeter per volt-second across the nanocrystal particles. 42. The sensor of claim 37, wherein the plurality of nanocrystal cores are electrically interconnected with linker molecules. 43. The sensor of claim 42, wherein the linker molecules include bidentate linker molecules. 44. The sensor of claim 43, wherein the linker molecules include ethanedithiol. 45. The sensor of claim 43, wherein the linker molecules include benzenedithiol. 46. The sensor of claim 1, wherein the optically sensitive layer comprises a unipolar photoconductive layer including a first carrier type and a second carrier type, wherein a first mobility of the first carrier type is higher than a second mobility of the second carrier type. 47. The sensor of claim 46, wherein the first carrier type is electrons and the second carrier type is holes. 48. The sensor of claim 46, wherein the first carrier type is holes and the second carrier type is electrons. 49. The sensor of claim 1, wherein the optically sensitive layer comprises a nanocrystal material having photoconductive gain and a responsivity of at least approximately 0.4 amps/volt (A/V). 50. The sensor of claim 49, wherein the responsivity is achieved under a bias approximately in a range of 0.5 volts to 5 volts. 51. The sensor of claim 1, wherein the optically sensitive layer comprises nanocrystals of a material having a bulk bandgap, and wherein the nanocrystals are quantum confined to have an effective bandgap more than twice the bulk bandgap. 52. The sensor of claim 1, wherein the optically sensitive layer includes nanocrystals comprising nanoparticles, wherein a nanoparticle diameter of the nanoparticles is less than a Bohr exciton radius of bound electron-hole pairs within the nanoparticle. 53. The sensor of claim 1, wherein the optically sensitive layer comprises monodisperse nanocrystals. 54. The sensor of claim 1, wherein the optically sensitive layer comprises nanocrystals. 55. The sensor of claim 54, wherein the nanocrystals are colloidal quantum dots. 56. The sensor of claim 55, wherein the quantum dots include a first carrier type and a second carrier type, wherein the first carrier type is a flowing carrier and the second carrier type is one of a substantially blocked carrier and a trapped carrier. 57. The sensor of claim 56, wherein the colloidal quantum dots include organic ligands, wherein a flow of at least one of the first carrier type and the second carrier type is related to the organic ligands. 58. The sensor of claim 1, comprising at least a first metal layer and a second metal layer, the optically sensitive layer in electrical communication with the second metal layer. 59. The sensor of claim 58, wherein the first metal layer has a first aspect ratio and the second metal layer has a second aspect ratio. 60. The sensor of claim 58, wherein the at least two metal layers include metal interconnect layers. 61. The sensor of claim 58, wherein the second metal layer forms contacts in electrical communication with the optically sensitive layer. 62. The sensor of claim 61, wherein the contacts comprise an aluminum body, a first coating and a second coating, the first coating comprising titanium nitride and positioned between the aluminum body and the optically sensitive layer, the second coating comprising titanium oxynitride and positioned between the first coating and the optically sensitive layer. 63. The sensor of claim 61, wherein the contacts comprise an aluminum body, a first coating and a second coating, the first coating comprising titanium nitride and positioned between the aluminum body and the optically sensitive layer, the second coating located between the first coating and the optically sensitive layer and comprising a metal selected from the group consisting of gold, platinum, palladium, nickel and tungsten. 64. The sensor of claim 61, wherein the contacts are formed from a plurality of metal sub-layers, each metal sub-layer comprising a constituent selected from the group consisting of titanium nitride, titanium oxy nitride, gold, platinum, palladium, nickel and tungsten. 65. The sensor of claim 58, wherein the second metal layer consists of metal other than aluminum, the metal including at least one layer selected from the group consisting of titanium nitride, titanium oxynitride, gold, platinum, palladium, nickel and tungsten. 66. The sensor of claim 58, wherein the second metal layer consists of metal other than copper, the metal including at least one layer selected from the group consisting of titanium nitride, titanium oxynitride, gold, platinum, palladium, nickel and tungsten. 67. The sensor of claim 58, wherein the second metal layer comprises a constituent selected from the group consisting of titanium nitride, titanium oxynitride, gold, platinum, palladium, nickel and tungsten. 68. The sensor of claim 58 wherein the optically sensitive layer makes direct contact with the second metal layer. 69. The sensor of claim 58, wherein the optically sensitive layer comprises a coating on the second metal layer. 70. The sensor of claim 58, wherein the metal layers comprise at least one additional metal layer between the first metal layer and the second metal layer. 71. The sensor of claim 70, wherein each of the first metal layer and the at least one additional metal layer comprises aluminum, wherein the at least one additional metal layer excludes aluminum. 72. The sensor of claim 70, wherein each of the first metal layer and the at least one additional metal layer comprises aluminum and titanium nitride, wherein the at least one additional metal layer excludes aluminum. 73. The sensor of claim 70, wherein each of the first metal layer and the at least one additional metal layer excludes aluminum. 74. The sensor of claim 70, wherein each of the first metal layer and the at least one additional metal layer excludes copper. 75. The sensor of claim 58, wherein the first metal layer has a first thickness dimension and the second metal layer has a second thickness dimension. 76. A sensor comprising: a first region of an optically sensitive material;a second region of the optically sensitive material, the second region covering at least a portion of the first region; andat least two electrodes adjacent the optically sensitive material;wherein the optically sensitive material with the electrodes is non-rectifying, wherein a non-linear relationship exists between electrical characteristics of the optically sensitive material and the intensity of light absorbed by the optically sensitive material; andwherein the first region and the second region possess substantially different spectral onset of absorption. 77. A sensor comprising: at least one optically sensitive layer having closely-packed semiconductor nanoparticle cores, the nanoparticle cores being passivated using ligands of at least two substantially different lengths; anda circuit comprising at least one node in electrical communication with the optically sensitive layer, the circuit to store an electrical signal proportional to the intensity of light incident on the optically sensitive layer during an integration period, a non-linear relationship to exist between electrical characteristics of the optically sensitive layer and the intensity of light absorbed by the optically sensitive layer. 78. A sensor comprising: at least one optically sensitive layer having closely-packed semiconductor nanoparticle cores, each nanoparticle core being covered with a shell comprising PbSO3; anda circuit comprising at least one node in electrical communication with the optically sensitive layer, the circuit to store an electrical signal proportional to the intensity of light incident on the optically sensitive layer during an integration period, a non-linear relationship to exist between electrical characteristics of the optically sensitive layer and the intensity of light absorbed by the optically sensitive layer. 79. A sensor comprising: at least one optically sensitive layer having closely-packed semiconductor nanoparticle cores, the nanoparticle cores comprising PbS that is partially oxidized and substantially lacking in PbSO4 (lead sulfate); anda circuit comprising at least one node in electrical communication with the optically sensitive layer, the circuit to store an electrical signal proportional to the intensity of light incident on the optically sensitive layer during an integration period, a non-linear relationship to exist between electrical characteristics of the optically sensitive layer and the intensity of light absorbed by the optically sensitive layer. 80. A sensor comprising: at least one optically sensitive layer having a nanocrystalline solid, at least a portion of a surface of the nanocrystalline solid being oxidized; anda circuit comprising at least one node in electrical communication with the optically sensitive layer, wherein the circuit stores an electrical signal proportional to the intensity of light incident on the optically sensitive layer during an integration period, wherein a non-linear relationship exists between electrical characteristics of the optically sensitive layer and the intensity of light absorbed by the optically sensitive layer. 81. The sensor of claim 80, wherein a composition of the nanocrystalline solid excludes a first set of native oxides and includes a second set of native oxides. 82. The sensor of claim 81, wherein the first set of native oxides includes PbSO4 (lead sulfate) and the second set of native oxides includes PbSO3. 83. The sensor of claim 80, wherein trap states of the nanocrystalline solid provide persistence, wherein an energy to escape from a predominant trap state is less than or equal to approximately 0.1 eV. 84. The sensor of claim 83, further comprising a non-predominant trap state, wherein an energy to escape from the non-predominant trap state is greater than or equal to approximately 0.2 eV. 85. A sensor comprising: at least one optically sensitive layer having substantially fused nanocrystal cores with a dark current density less than approximately 0.1 nA/cm2; anda circuit comprising at least one node in electrical communication with the optically sensitive layer, wherein the circuit stores an electrical signal proportional to the intensity of light incident on the optically sensitive layer during an integration period, wherein a non-linear relationship exists between electrical characteristics of the optically sensitive layer and the intensity of light absorbed by the optically sensitive layer. 86. A sensor comprising: at least one optically sensitive layer having a nanocrystal material with a photoconductive gain and a responsivity of at least approximately 0.4 amps/volt (A/V); anda circuit comprising at least one node in electrical communication with the optically sensitive layer, wherein the circuit stores an electrical signal proportional to the intensity of light incident on the optically sensitive layer during an integration period, wherein a non-linear relationship exists between electrical characteristics of the optically sensitive layer and the intensity of light absorbed by the optically sensitive layer. 87. The sensor of claim 86, wherein the responsivity is achieved under a bias approximately in a range of about 0.5 volts to about 5 volts. 88. A sensor comprising: at least one optically sensitive layer having nanocrystals, the nanocrystals being colloidal quantum dots, the quantum dots including a first carrier type and a second carrier type, the first carrier type being a flowing carrier and the second carrier type being one of a substantially blocked carrier and a trapped carrier; anda circuit comprising at least one node in electrical communication with the optically sensitive layer, wherein the circuit stores an electrical signal proportional to the intensity of light incident on the optically sensitive layer during an integration period, wherein a non-linear relationship exists between electrical characteristics of the optically sensitive layer and the intensity of light absorbed by the optically sensitive layer. 89. The sensor of claim 88, wherein the colloidal quantum dots include organic ligands, wherein a flow of at least one of the first carrier type and the second carrier type is related to the organic ligands. 90. A sensor comprising: at least one optically sensitive layer, the optically sensitive layer configured to be biased as both a current sink and a current source; anda circuit comprising at least one node in electrical communication with the optically sensitive layer, wherein the circuit stores an electrical signal proportional to the intensity of light incident on the optically sensitive layer during an integration period, wherein a non-linear relationship exists between electrical characteristics of the optically sensitive layer and the intensity of light absorbed by the optically sensitive layer.
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