[특허]Film forming apparatus and film forming method

Tokyo Electron Limited

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특허 상세정보

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내보내기 페이스북 공유 트위터 공유 카카오톡 공유

Film forming apparatus and film forming method

특허상세정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C23C-016/455 C23C-016/00
미국특허분류(USC)	118/715; 118/726; 156/345.29
출원번호	US-0198193 (2005-08-08)
등록번호	US-8518181 (2013-08-27)
우선권정보	JP-2004-233170 (2004-08-10)
발명자 / 주소	Hara, Masamichi
출원인 / 주소	Tokyo Electron Limited
대리인 / 주소	Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
인용정보	피인용 횟수 : 0 인용 특허 : 12

초록
▼

A thin film formation apparatus that introduces, in a first operational phase thereof, a source gas into a processing vessel capable of being evacuated and accommodating a substrate to be processed, and forms a thin film on the substrate by causing a reaction in the introduced source gas. The apparatus comprises a source gas producing part producing the source gas by vaporizing a source material of solid or liquid, a source gas supplying path forwarding the source gas produced in the source gas producing part to the processing vessel, a first open/close valve provided on the source gas supplying path, the first open/close valve taking an opened state in the first operational phase, and a carrier gas supply part supplying a carrier gas to the source gas producing part such that the source gas fills a part of the source gas supplying path at an upstream side of the first open/close valve and the source gas producing part with a quantity exceeding a predetermined value, immediately before the first open/close valve becoming an opened state.

대표
청구항
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1. A thin film formation apparatus that introduces, in a first operational phase thereof, a source gas into a processing vessel capable of being evacuated and accommodating therein a substrate to be processed, and forms a thin film on said substrate by causing a reaction in said introduced source gas, comprising: a source gas producing part producing said source gas by vaporizing a source material of solid or liquid;a carrier gas supply part supplying a carrier gas to said source gas producing part;a source gas supplying line extending directly from an outlet of said source gas producing part to said processing vessel, said source gas supplying line causing said source gas produced in said source gas producing part to flow to said processing vessel;a first open/close valve provided on said source gas supplying line, said first open/close valve taking an opened state in said first operational phase; anda plurality of reserve tanks connected to said source gas supplying line via a line branched out and separate from said source gas supplying line, said reserve tanks configured to suck said source gas in an interval in which said first open/close valve is in a closed state and discharge said source gas when said first open/close valve has become said open state,wherein said thin film formation apparatus is configured to adjust a volume of said source gas filled in said source gas supplying line at a part upstream side to said first open/close valve, by selectively switching said plurality of reserve tanks,wherein said thin film formation apparatus carrying out an atomic layer deposition process, by carrying out said first operational phase, a first purging process for purging said processing vessel after said first operational phase, a second operational phase of supplying a reducing gas to said processing vessel after said first purging process, and a second purging process for purging said processing vessel after said second operational phase, andwherein the source gas supplying line extending directly from the outlet of the source gas producing part to said processing vessel does not pass through any of the plurality of reserve tanks. 2. The thin film formation apparatus as claimed in claim 1, wherein said carrier gas supply part comprises: a carrier gas source supplying said carrier gas;a carrier gas supply path forwarding said carrier gas from said carrier gas source to said source gas producing part; anda second open/close valve provided to said carrier gas supply path. 3. The thin film formation apparatus as claimed in claim 2, wherein said carrier gas supply part controls an open/close operation of said second open/close valve in connection with an open/close operation of said first open/close valve. 4. The thin film formation apparatus as claimed in claim 3, wherein said second open/close valve is switched from a closed state to an opened state substantially simultaneously to a switching operation of said first open/close valve from a closed state to an opened state, and wherein said second open/close valve is switched from said opened state to said closed state after a predetermined time has elapsed from the switching of said first open/close valve from said closed state to said opened state. 5. The thin film formation apparatus as claimed in claim 2, wherein said carrier gas supply part causes an open/close operation in said second open/close valve without synchronization with an open/close operation of said first open/close valve. 6. The thin film forming apparatus as claimed in claim 2, wherein a second evacuation path is connected to said carrier gas supply path for evacuation and there is provided a second pressure release unit to said second evacuation path for releasing said carrier gas when a pressure inside said carrier gas supply path has exceeded a predetermined value. 7. The thin film forming apparatus as claimed in claim 2, wherein said source gas producing part includes a source vessel accommodating therein a solid source material or liquid source material, said source vessel communicating with said carrier gas supply path and said source gas supplying line. 8. The thin film forming apparatus as claimed in claim 2, wherein a third evacuation path for evacuation is connected to said source gas supplying line and a third open/close valve is provided to said third evacuation path such that said third open/close valve is opened when discarding said source gas produced in said source gas producing part without supplying said source gas to said processing vessel. 9. The thin film forming apparatus as claimed in claim 1, wherein said carrier gas supply part comprises: a carrier gas source supplying a carrier gas;a carrier gas supply path for supplying said carrier gas from said carrier gas source to said source gas producing part; anda flow rate control device provided to said carrier gas supply path. 10. The thin film formation apparatus as claimed in claim 9, wherein said carrier gas supply part operates said flow rate control device such that a flow rate of said carrier gas is changed in connection to open/close operation of said first open/close valve. 11. The thin film forming apparatus as claimed in claim 10, wherein said flow rate control device decreases a flow rate of said carrier gas with a predetermined delay time at the time of switching of said first open/close valve from an opened state to a closed state such that said flow rate of said carrier gas is increased with a predetermined slope at the time of switching of said first open/close valve from said closed state to said opened state. 12. The thin film forming apparatus as claimed in claim 9, wherein said carrier gas supply part controls an operation of said flow rate control device such that a flow rate of said carrier gas is controlled independently to an open/close operation of said first open/close valve. 13. The thin film forming apparatus as claimed in claim 1, wherein a first evacuation path is connected to said source gas supplying line for evacuation and there is provided a first pressure release unit is in said first evacuation path for releasing said source gas when a pressure inside said source gas supplying line has exceeded a predetermined value. 14. The thin film forming apparatus as claimed in claim 1, wherein there is provided a heating part heating said source gas supplying line for preventing condensation of the source gas. 15. The thin film forming apparatus as claimed in claim 1, wherein said first phase is repeated plural times with a predetermined time interval. 16. The thin film forming apparatus as claimed in claim 1, wherein said source gas introduced into said processing vessel in said first phase is absorbed on said substrate with a predetermined quantity. 17. The thin film forming apparatus as claimed in claim 16, wherein there is provided a purge gas supplying part for supplying a purge gas to said processing vessel for discharging excess source gas in a second phase immediately after said first phase. 18. The thin film forming apparatus as claimed in claim 17, wherein there is provided a first reaction gas supplying part supplying a first reaction gas in a third phase immediately following said second phase to the processing vessel for causing reaction with said source gas that has been absorbed on said substrate. 19. The thin film forming apparatus as claimed in claim 18, wherein said purge gas supplying part supplies a purge gas to said processing vessel for discharging said excess reaction gas in a fourth phase immediately after said third phase. 20. The thin film forming apparatus as claimed in claim 1, wherein there is provided a second reaction gas supply part for supplying a second reaction gas reactive with said source gas to said processing vessel, such that said first open/close valve is opened in a fifth phase and said source gas is introduced into said processing vessel from said source gas producing part and such that said second reaction gas is introduced from said second reaction gas supply part simultaneously, said second reaction gas thereby causing a reaction with said source gas. 21. The thin film forming apparatus as claimed in claim 20, wherein there is provided a gas flow rate control unit controlling a flow rate of said carrier gas supplied to said source gas producing part from said carrier gas supply part, such that said source gas is introduced to said processing vessel with a desired flow rate in said fifth phase. 22. The thin film forming apparatus as claimed in claim 21, wherein said gas flow rate control unit comprises: a flow meter for measuring a flow rate of a mixture gas of said source gas and said carrier gas flowing through said source gas supplying line; anda source gas flow rate processing part for obtaining a flow rate of said source gas flowing through said source gas supplying line based on said flow rate measurement value from said flow meter and said flow rate of said carrier gas supplied to said source gas producing part from said carrier gas supplying part. 23. The thin film formation apparatus as claimed in claim 1, wherein said carrier gas supply part includes a second open/close valve that operates together with said first open/close value, said second open/close valve supplying said carrier gas to said source gas producing part or interrupting a supply of said carrier gas to said source gas producing part. 24. The thin film formation apparatus as claimed in claim 23, wherein said carrier gas supply part includes a flow rate controller that changes, in cooperation with said first open/close valve, a flow rate of said carrier gas supplied to said source gas producing part.

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Film forming apparatus and film forming method

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Film forming apparatus and film forming method

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