IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
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출원번호 |
US-0014248
(2008-01-15)
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등록번호 |
US-8524321
(2013-09-03)
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발명자
/ 주소 |
- Spohn, Ronald F.
- Peters, David Walter
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
0 인용 특허 :
19 |
초록
▼
This invention relates to a vapor or liquid phase reagent dispensing apparatus having a metal seal aligned and in contact with hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the pro
This invention relates to a vapor or liquid phase reagent dispensing apparatus having a metal seal aligned and in contact with hardened opposing flat surfaces of a top wall member and a protuberance on a side wall member, wherein the hardened opposing flat surfaces of the top wall member and the protuberance have a hardness greater than the hardness of said metal seal. The dispensing apparatus may be used for dispensing of reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices.
대표청구항
▼
1. A vapor phase reagent dispensing apparatus comprising: a vessel which comprises a removable top wall member, a sidewall member and a bottom wall member configured to form an internal vessel compartment to hold a source chemical up to a fill level and to additionally define an inner gas volume abo
1. A vapor phase reagent dispensing apparatus comprising: a vessel which comprises a removable top wall member, a sidewall member and a bottom wall member configured to form an internal vessel compartment to hold a source chemical up to a fill level and to additionally define an inner gas volume above the fill level;said sidewall member having a protuberance that extends into the internal vessel compartment adjacent to the top wall member;said top wall member and said sidewall member having opposing flat surfaces, wherein the opposing flat surfaces are optionally in contact with one another;fastening means for securing said top wall member to said sidewall member through the opposing flat surfaces that are optionally in contact with one another;said top wall member and said protuberance having opposing flat surfaces, wherein the opposing flat surfaces are not in contact with one another and at least a portion of the opposing flat surfaces are hardened;a metal seal aligned and in contact with the hardened opposing flat surfaces of said top wall member and said protuberance;a portion of the top wall member having a carrier gas feed inlet opening through which carrier gas can be fed into said inner gas volume above the fill level to cause vapor of said source chemical to become entrained in said carrier gas to produce vapor phase reagent; anda portion of the top wall member having a vapor phase reagent outlet opening through which said vapor phase reagent can be dispensed from said apparatus;wherein said hardened opposing flat surfaces of said top wall member and said protuberance are formed by incorporating a hardening material into said opposing flat surfaces and wherein said hardened opposing flat surfaces of said top wall member and said protuberance have a hardness greater than the hardness of said metal seal. 2. The vapor phase reagent dispensing apparatus of claim 1 wherein the metal seal comprises an outer metal jacket, an inner elastomeric material or spring, and optionally a liner positioned between said outer metal jacket and said inner elastomeric material or spring. 3. The vapor phase reagent dispensing apparatus of claim 2 wherein the outer metal jacket includes a projection which is annularly formed at a top exterior surface and which abuts against the hardened flat surface of the top wall member, and a projection which is annularly formed at a bottom exterior surface and which abuts against the hardened flat surface of the protuberance. 4. The vapor phase reagent dispensing apparatus of claim 1 wherein the metal seal comprises an annular shaped seal having a cross section provided with an outer circumferential opening and formed in a laterally C-shape or U-shape. 5. The vapor phase reagent dispensing apparatus of claim 1 wherein the hardening material comprises Stellite. 6. The vapor phase reagent dispensing apparatus of claim 1 wherein the vessel is made of stainless steel and the outer metal jacket is made of stainless steel. 7. The vapor phase reagent dispensing apparatus of claim 1 having a helium leak rate (unfilled container testing procedure) of less than 9×10−9 standard cubic centimeters per second. 8. The vapor phase reagent dispensing apparatus of claim 1 further comprising: a carrier gas feed line extending from the carrier gas feed inlet opening upwardly and exteriorly from the top wall member for delivery of carrier gas into said inner gas volume above the fill level, the carrier gas feed line containing a carrier gas flow control valve therein for control of flow of the carrier gas therethrough; anda vapor phase reagent discharge line extending from the vapor phase reagent outlet opening upwardly and exteriorly from the top wall member for removal of vapor phase reagent from said inner gas volume above the fill level, the vapor phase reagent discharge line containing a vapor phase reagent flow control valve therein for control of flow of the vapor phase reagent therethrough. 9. The vapor phase reagent dispensing apparatus of claim 8 further comprising the vapor phase reagent discharge line in vapor phase reagent flow communication with a vapor phase delivery deposition system, said deposition system selected from a chemical vapor deposition system and an atomic layer deposition system. 10. The vapor phase reagent dispensing apparatus of claim 8 further comprising: a deposition chamber selected from a chemical vapor deposition chamber and an atomic layer deposition chamber;the vapor phase reagent discharge line connecting the vapor phase reagent dispensing apparatus to the deposition chamber;a heatable susceptor contained within the deposition chamber and located in a receiving relationship to the vapor phase reagent discharge line; andan effluent discharge line connected to the deposition chamber;such that vapor phase reagent passes through the vapor phase reagent discharge line and into the deposition chamber, for contact with a substrate on the heatable susceptor and any remaining effluent is discharged through the effluent discharge line. 11. The vapor phase reagent dispensing apparatus of claim 10 wherein said substrate is comprised of a material selected from a metal, a metal silicide, a semiconductor, an insulator and a barrier material. 12. The vapor phase reagent dispensing apparatus of claim 10 wherein said substrate is a patterned wafer. 13. The vapor phase reagent dispensing apparatus of claim 1 in which said bottom wall member has a sump cavity therein extending downwardly from the surface of said bottom wall member. 14. The vapor phase reagent dispensing apparatus of claim 13 further comprising: a temperature sensor extending from an upper end exterior of the vessel through a portion of the top wall member and generally vertically downwardly through the inner gas volume into the source chemical, with the lower end of the temperature sensor being located in non-interfering proximity to the surface of the sump cavity;a source chemical level sensor extending from an upper end exterior of the vessel through a portion of the top wall member and generally vertically downwardly through the inner gas volume into the source chemical, with the lower end of the source chemical level sensor being located in non-interfering proximity to the surface of the sump cavity; andthe temperature sensor being operatively arranged in the vessel to determine the temperature of source chemical in the vessel, the source chemical level sensor being operatively arranged in the vessel to determine the level of source chemical in the vessel, the temperature sensor and source chemical level sensor being located in non-interfering proximity to each other in the vessel, with the lower end of the temperature sensor being located at the same or closer proximity to the surface of the sump cavity in relation to the lower end of the source chemical level sensor, and the temperature sensor and source chemical level sensor being in source chemical flow communication in the vessel. 15. The vapor phase reagent dispensing apparatus of claim 1 wherein the vessel comprises a cylindrically shaped side wall member or side wall members defining a non-cylindrical shape. 16. The vapor phase reagent dispensing apparatus of claim 1 wherein the source chemical comprises a liquid or solid material. 17. The vapor phase reagent dispensing apparatus of claim 1 wherein the source chemical comprises a precursor for a metal selected from ruthenium, hafnium, tantalum, molybdenum, platinum, gold, titanium, lead, palladium, zirconium, bismuth, strontium, barium, calcium, antimony and thallium, or a precursor for a metalloid selected from silicon and germanium. 18. The vapor phase reagent dispensing apparatus of claim 1 wherein the vapor or liquid phase reagent comprises a precursor for a metal selected from ruthenium, hafnium, tantalum, molybdenum, platinum, gold, titanium, lead, palladium, zirconium, bismuth, strontium, barium, calcium, antimony and thallium, or a precursor for a metalloid selected from silicon and germanium. 19. A method for delivery of a vapor phase reagent to a deposition chamber comprising: (a) providing a vapor phase reagent dispensing apparatus comprising:a vessel which comprises a removable top wall member, a sidewall member and a bottom wall member configured to form an internal vessel compartment to hold a source chemical up to a fill level and to additionally define an inner gas volume above the fill level;said sidewall member having a protuberance that extends into the internal vessel compartment adjacent to the top wall member;said top wall member and said sidewall member having opposing flat surfaces, wherein the opposing flat surfaces are optionally in contact with one another;fastening means for securing said top wall member to said sidewall member through the opposing flat surfaces that are optionally in contact with one another;said top wall member and said protuberance having opposing flat surfaces, wherein the opposing flat surfaces are not in contact with one another and at least a portion of the opposing flat surfaces are hardened; anda metal seal aligned and in contact with the hardened opposing flat surfaces of said top wall member and said protuberance;a portion of the top wall member having a carrier gas feed inlet opening through which carrier gas can be fed into said inner gas volume above the fill level to cause vapor of said source chemical to become entrained in said carrier gas to produce vapor phase reagent;a carrier gas feed line extending from the carrier gas feed inlet opening upwardly and exteriorly from the top wall member for delivery of carrier gas into said inner gas volume above the fill level, the carrier gas feed line containing a carrier gas flow control valve therein for control of flow of the carrier gas therethrough;a portion of the top wall member having a vapor phase reagent outlet opening through which said vapor phase reagent can be dispensed from said apparatus; anda vapor phase reagent discharge line extending from the vapor phase reagent outlet opening upwardly and exteriorly from the top wall member for removal of vapor phase reagent from said inner gas volume above the fill level, the vapor phase reagent discharge line containing a vapor phase reagent flow control valve therein for control of flow of the vapor phase reagent therethrough;wherein said hardened opposing flat surfaces of said top wall member and said protuberance are formed by incorporating a hardening material into said opposing flat surfaces and wherein said hardened opposing flat surfaces of said top wall member and said protuberance have a hardness greater than the hardness of said metal seal;(b) adding source chemical at ambient temperature to said vapor phase reagent dispensing apparatus;(c) heating the source chemical in said vapor phase reagent dispensing apparatus to a temperature sufficient to vaporize the source chemical to provide vapor phase reagent;(d) feeding a carrier gas into said vapor phase reagent dispensing apparatus through said carrier gas feed line;(e) withdrawing the vapor phase reagent and carrier gas from said vapor phase reagent dispensing apparatus through said vapor phase reagent discharge line; and(f) feeding the vapor phase reagent and carrier gas into said deposition chamber. 20. The method of claim 19 further comprising: (g) contacting the vapor phase reagent with a substrate on a heatable susceptor within the deposition chamber; and(h) discharging any remaining effluent through an effluent discharge line connected to the deposition chamber. 21. The method of claim 20 wherein said substrate is comprised of a material selected from a metal, a metal silicide, a semiconductor, an insulator and a barrier material. 22. The method of claim 20 wherein said substrate is a patterned wafer. 23. The method of claim 19 in which the deposition chamber is selected from a chemical vapor deposition chamber and an atomic layer deposition chamber.
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