IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
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출원번호 |
US-0874510
(2010-09-02)
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등록번호 |
US-8525203
(2013-09-03)
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우선권정보 |
JP-2010-031457 (2010-02-16) |
발명자
/ 주소 |
- Tachibana, Koichi
- Nago, Hajime
- Hikosaka, Toshiki
- Kimura, Shigeya
- Nunoue, Shinya
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출원인 / 주소 |
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대리인 / 주소 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
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인용정보 |
피인용 횟수 :
6 인용 특허 :
0 |
초록
▼
According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting portion, a first layer, a second layer, and an intermediate layer. The semiconductor layers include nitride semiconductor. The light emitting port
According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting portion, a first layer, a second layer, and an intermediate layer. The semiconductor layers include nitride semiconductor. The light emitting portion is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a quantum well layer. The first layer is provided between the light emitting portion and the p-type semiconductor layer and includes AlX1Ga1-x1N having first Al composition ratio x1. The second layer is provided between the first layer and the p-type semiconductor layer and includes Alx2Ga1-x2N having second Al composition ratio x2 higher than the first Al composition ratio x1. The intermediate layer is provided between the first layer and the light emitting portion and has a thickness not smaller than 3 nanometers and not larger than 8 nanometers and includes Inz1Ga1-z1N (0≦z11).
대표청구항
▼
1. A semiconductor light emitting device, comprising: an n-type semiconductor layer including a nitride semiconductor;a p-type semiconductor layer including a nitride semiconductor;a light emitting portion provided between the n-type semiconductor layer and the p-type semiconductor layer and includi
1. A semiconductor light emitting device, comprising: an n-type semiconductor layer including a nitride semiconductor;a p-type semiconductor layer including a nitride semiconductor;a light emitting portion provided between the n-type semiconductor layer and the p-type semiconductor layer and including a quantum well layer;a first layer provided between the light emitting portion and the p-type semiconductor layer, the first layer including Alx1Ga1-x1N, where first Al composition ratio x1 is an atomic ratio of Al among group III elements, the first layer being doped with Mg;a second layer provided between the first layer and the p-type semiconductor layer, the second layer including Alx2Ga1-x2N, where second Al composition ratio x2 is an atomic ratio of Al among group III elements, the second Al composition ratio x2 being higher than the first Al composition ratio x1; andan intermediate layer provided between the first layer and the light emitting portion, the intermediate layer having a thickness not smaller than 3 nanometers and not larger than 8 nanometers and including Inz1Ga1-z1N, where In composition ratio z1 is an atomic ratio of In among group III elements, the In composition ratio z1 being not lower than 0 and lower than 1. 2. The device according to claim 1, wherein a concentration of a p-type impurity in the second layer is higher than a concentration of a p-type impurity in the first layer. 3. The device according to claim 1, wherein an Al composition ratio increases from the first layer toward the second layer. 4. The device according to claim 1, wherein the first Al composition ratio x1 is not lower than 0.001 and not higher than 0.05. 5. The device according to claim 1, wherein the first Al composition ratio x1 is substantially 0.05 and a thickness of the first layer is substantially 5 nanometers. 6. The device according to claim 1, wherein the second Al composition ratio x2 is not lower than 0.1 and not higher than 0.2. 7. The device according to claim 1, wherein the second Al composition ratio x2 is substantially 0.20 and a thickness of the second layer is substantially 5 nanometers. 8. The device according to claim 1, wherein the intermediate layer does not include Al. 9. The device according to claim 1, wherein the intermediate layer is made of one of GaN and InGaN. 10. The device according to claim 1, further comprising: a third layer provided between the first layer and the second layer, the third layer including Alx3Ga1-x3N, where third Al composition ratio x3 is an atomic ratio of Al among group III elements, the third Al composition ratio x3 being between the first Al composition ratio and the second Al composition ratio; anda fourth layer provided between the third layer and the second layer, the fourth layer including Alx4Ga1-x4N, where fourth Al composition ratio x4 is an atomic ratio of Al among group III elements, the fourth Al composition ratio x4 being between the third Al composition ratio x3 and the second Al composition ratio x2. 11. The device according to claim 1, further comprising a third layer provided between the first layer and the second layer, the third layer including Alx3Ga1-x3N, where third Al composition ratio x3 is an atomic ratio of Al among group III elements, the third Al composition ratio being between the first Al composition ratio x1 and the second Al composition ratio x2, the third Al composition ratio x3 in the third layer increases along a direction from the light emitting portion toward the p-type semiconductor layer. 12. The device according to claim 11, wherein the third layer includes a plurality of layers. 13. The device according to claim 1, wherein the light emitting portion includes a plurality of barrier layers and a plurality of well layers, the barrier layers and the well layers being alternately stacked along a direction from the n-type semiconductor layer toward the p-type semiconductor layer. 14. The device according to claim 13, wherein one of the plurality of barrier layers is in contact with the n-type semiconductor layer. 15. The device according to claim 13, wherein one of the plurality of well layers is in contact with the intermediate layer. 16. The device according to claim 1, wherein the n-type semiconductor layer includes an n-type GaN layer and a n-type guide layer, the n-type guide layer being provided between the n-type GaN layer and the light emitting portion and being made of one of GaN including Si and InGaN including Si. 17. The device according to claim 1, wherein the p-type semiconductor layer includes a p-type GaN contact layer and a p-type GaN layer provided between the p-type GaN contact layer and the second layer, a concentration of a p-type impurity included in the p-type GaN layer being lower than a concentration of a p-type impurity included in the p-type GaN contact layer. 18. The device according to claim 1, further comprising: a substrate made of sapphire and provided on a side of the n-type semiconductor layer opposite to the p-type semiconductor layer; anda buffer layer provided between the substrate and the n-type semiconductor layer. 19. The device according to claim 1, further comprising: an n-side electrode provided in contact with an exposed part of the n-type semiconductor layer; anda p-side electrode provided in contact with the p-type semiconductor layer. 20. The device according to claim 1, wherein the concentration of Mg in the first layer is not less than 1×1017 cm−3 and not more than 1×1019 cm−3. 21. A semiconductor light emitting device, comprising: an n-type semiconductor layer including a nitride semiconductor;a p-type semiconductor layer including a nitride semiconductor;a light emitting portion provided between the n-type semiconductor layer and the p-type semiconductor layer and including a quantum well layer;a first layer provided between the light emitting portion and the p-type semiconductor layer, the first layer including AlX1Ga1-x1N, where first Al composition ratio x1 is an atomic ratio of Al among group III elements;a second layer provided between the first layer and the p-type semiconductor layer, the second layer including Alx2Ga1-x2N, where second Al composition ratio x2 is an atomic ratio of Al among group III elements, the second Al composition ratio x2 being higher than the first Al composition ratio x1;a third layer provided between the first layer and the second layer, the third layer including Alx3Ga1-x3N, where third Al composition ratio x3 is an atomic ratio of Al among group III elements, the third Al composition being between the first Al composition ratio x1 and the second Al composition ratio x2, andan intermediate layer provided between the first layer and the light emitting portion, the intermediate layer having a thickness not smaller than 3 nanometers and not larger than 8 nanometers and including Inz1Ga1-z1N, where In composition ratio z1 is an atomic ratio of In among group III elements, the In composition ratio z1 being not lower than 0 and lower than 1. 22. The device according to claim 21, wherein a concentration of a p-type impurity in the second layer is higher than a concentration of a p-type impurity in the first layer. 23. The device according to claim 21, wherein an Al composition ratio increases from the first layer toward the second layer. 24. The device according to claim 21, wherein the first Al composition ratio x1 is not lower than 0.001 and not higher than 0.05. 25. The device according to claim 21, wherein the first Al composition ratio x1 is substantially 0.05 and a thickness of the first layer is substantially 5 nanometers. 26. The device according to claim 21, wherein the second Al composition ratio x2 is not lower than 0.1 and not higher than 0.2. 27. The device according to claim 21, wherein the second Al composition ratio x2 is substantially 0.20 and a thickness of the second layer is substantially 5 nanometers. 28. The device according to claim 21, wherein the intermediate layer does not include Al. 29. The device according to claim 21, wherein the intermediate layer is made of one of GaN and InGaN. 30. The device according to claim 21, further comprising: a third layer provided between the first layer and the second layer, the third layer including Alx3Ga1-x3N, where third Al composition ratio x3 is an atomic ratio of Al among group III elements, the third Al composition ratio x3 being between the first Al composition ratio and the second Al composition ratio; anda fourth layer provided between the third layer and the second layer, the fourth layer including Alx4Ga1-x4N, where fourth Al composition ratio x4 is an atomic ratio of Al among group III elements, the fourth Al composition ratio x4 being between the third Al composition ratio x3 and the second Al composition ratio x2. 31. The device according to claim 21, further comprising a third layer provided between the first layer and the second layer, the third layer including Alx3Ga1-x3N, where third Al composition ratio x3 is an atomic ratio of Al among group III elements, the third Al composition ratio being between the first Al composition ratio x1 and the second Al composition ratio x2, the third Al composition ratio x3 in the third layer increases along a direction from the light emitting portion toward the p-type semiconductor layer. 32. The device according to claim 31, wherein the third layer includes a plurality of layers. 33. The device according to claim 21, wherein the light emitting portion includes a plurality of barrier layers and a plurality of well layers, the barrier layers and the well layers being alternately stacked along a direction from the n-type semiconductor layer toward the p-type semiconductor layer. 34. The device according to claim 33, wherein one of the plurality of barrier layers is in contact with the n-type semiconductor layer. 35. The device according to claim 33, wherein one of the plurality of well layers is in contact with the intermediate layer. 36. The device according to claim 21, wherein the n-type semiconductor layer includes an n-type GaN layer and a n-type guide layer, the n-type guide layer being provided between the n-type GaN layer and the light emitting portion and being made of one of GaN including Si and InGaN including Si. 37. The device according to claim 21, wherein the p-type semiconductor layer includes a p-type GaN contact layer and a p-type GaN layer provided between the p-type GaN contact layer and the second layer, a concentration of a p-type impurity included in the p-type GaN layer being lower than a concentration of a p-type impurity included in the p-type GaN contact layer. 38. The device according to claim 21, further comprising: a substrate made of sapphire and provided on a side of the n-type semiconductor layer opposite to the p-type semiconductor layer; anda buffer layer provided between the substrate and the n-type semiconductor layer. 39. The device according to claim 31, further comprising: an n-side electrode provided in contact with an exposed part of the n-type semiconductor layer; anda p-side electrode provided in contact with the p-type semiconductor layer. 40. A semiconductor light emitting device, comprising: an n-type semiconductor layer including a nitride semiconductor;a p-type semiconductor layer including a nitride semiconductor;a light emitting portion provided between the n-type semiconductor layer and the p-type semiconductor layer and including a quantum well layer;a first layer provided between the light emitting portion and the p-type semiconductor layer, the first layer including AlX1Ga1-x1N, where first Al composition ratio x1 is an atomic ratio of Al among group III elements;a second layer provided between the first layer and the p-type semiconductor layer and in direct contact with the first layer, the second layer including Alx2Ga1-x2N, where second Al composition ratio x2 is an atomic ratio of Al among group III elements, the second Al composition ratio x2 being higher than the first Al composition ratio x1; andan intermediate layer provided between the first layer and the light emitting portion, the intermediate layer having a thickness not smaller than 3 nanometers and not larger than 8 nanometers and including Inz1Ga1-z1N, where In composition ratio z1 is an atomic ratio of In among group III elements, the In composition ratio z1 being not lower than 0 and lower than 1. 41. The device according to claim 40, wherein a concentration of a p-type impurity in the second layer is higher than a concentration of a p-type impurity in the first layer. 42. The device according to claim 40, wherein an Al composition ratio increases from the first layer toward the second layer. 43. The device according to claim 40, wherein the first Al composition ratio x1 is not lower than 0.001 and not higher than 0.05. 44. The device according to claim 40, wherein the first Al composition ratio x1 is substantially 0.05 and a thickness of the first layer is substantially 5 nanometers. 45. The device according to claim 40, wherein the second Al composition ratio x2 is not lower than 0.1 and not higher than 0.2. 46. The device according to claim 40, wherein the second Al composition ratio x2 is substantially 0.20 and a thickness of the second layer is substantially 5 nanometers. 47. The device according to claim 40, wherein the intermediate layer does not include Al. 48. The device according to claim 40, wherein the intermediate layer is made of one of GaN and InGaN. 49. The device according to claim 40, further comprising: a third layer provided between the first layer and the second layer, the third layer including Alx3Ga1-x3N, where third Al composition ratio x3 is an atomic ratio of Al among group III elements, the third Al composition ratio x3 being between the first Al composition ratio and the second Al composition ratio; anda fourth layer provided between the third layer and the second layer, the fourth layer including Alx4Ga1-x4N, where fourth Al composition ratio x4 is an atomic ratio of Al among group III elements, the fourth Al composition ratio x4 being between the third Al composition ratio x3 and the second Al composition ratio x2. 50. The device according to claim 40, further comprising a third layer provided between the first layer and the second layer, the third layer including Alx3Ga1-x3N, where third Al composition ratio x3 is an atomic ratio of Al among group III elements, the third Al composition ratio being between the first Al composition ratio x1 and the second Al composition ratio x2, the third Al composition ratio x3 in the third layer increases along a direction from the light emitting portion toward the p-type semiconductor layer. 51. The device according to claim 50, wherein the third layer includes a plurality of layers. 52. The device according to claim 40, wherein the light emitting portion includes a plurality of barrier layers and a plurality of well layers, the barrier layers and the well layers being alternately stacked along a direction from the n-type semiconductor layer toward the p-type semiconductor layer. 53. The device according to claim 52, wherein one of the plurality of barrier layers is in contact with the n-type semiconductor layer. 54. The device according to claim 52, wherein one of the plurality of well layers is in contact with the intermediate layer. 55. The device according to claim 40, wherein the n-type semiconductor layer includes an n-type GaN layer and a n-type guide layer, the n-type guide layer being provided between the n-type GaN layer and the light emitting portion and being made of one of GaN including Si and InGaN including Si. 56. The device according to claim 40, wherein the p-type semiconductor layer includes a p-type GaN contact layer and a p-type GaN layer provided between the p-type GaN contact layer and the second layer, a concentration of a p-type impurity included in the p-type GaN layer being lower than a concentration of a p-type impurity included in the p-type GaN contact layer. 57. The device according to claim 40, further comprising: a substrate made of sapphire and provided on a side of the n-type semiconductor layer opposite to the p-type semiconductor layer; anda buffer layer provided between the substrate and the n-type semiconductor layer. 58. The device according to claim 40, further comprising: an n-side electrode provided in contact with an exposed part of the n-type semiconductor layer; anda p-side electrode provided in contact with the p-type semiconductor layer.
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