The present invention discloses the improvements to a vacuum swing adsorption (VSA) process used for Xe recovery. By only collecting the recovered gas mixture after the initial evacuation of N2 from the adsorbent vessel and void space, the recovered Xe is not diluted by N2 contained in the adsorbent
The present invention discloses the improvements to a vacuum swing adsorption (VSA) process used for Xe recovery. By only collecting the recovered gas mixture after the initial evacuation of N2 from the adsorbent vessel and void space, the recovered Xe is not diluted by N2 contained in the adsorbent vessel and void space. The concentration of the recovered Xe can by increased (high purity), simultaneously little Xenon is lost. During the initial evacuation of N2, the vessel has been evacuated to a pressure less than 1 atmospheric pressure, for example, from 100 to 1 torr.
대표청구항▼
1. A process of recovering xenon from a Xe-containing feed gas, comprising the steps of: providing an adsorption vessel containing an adsorbent having a Xe/N2 selectivity ratio of less than 65;feeding the Xe-containing feed gas into the adsorption vessel, wherein the Xe-containing feed gas comprises
1. A process of recovering xenon from a Xe-containing feed gas, comprising the steps of: providing an adsorption vessel containing an adsorbent having a Xe/N2 selectivity ratio of less than 65;feeding the Xe-containing feed gas into the adsorption vessel, wherein the Xe-containing feed gas comprises an initial concentration of nitrogen greater than 50% and an initial concentration of xenon of at least 0.05%;evacuating the adsorption vessel by reducing pressure from atmospheric pressure to below atmospheric pressure, wherein the evacuating contains two parts: (1) evacuating a first part of gas , and (2) recovering a first xenon-enriched gas when the below atmospheric pressure reaches P1;purging the adsorption vessel when the below atmospheric pressure reaching P2 to recover a second xenon-enriched gas, wherein the purging is maintained at the subatmospheric pressure P2; andcombining the first xenon-enriched gas and the second xenon-enriched gas to provide a product gas comprising a final concentration of xenon at least 20 times greater than the initial concentration of xenon;wherein P1 is equal to or greater than P2. 2. The process of claim 1, further comprising repressurizing the adsorption vessel after the purging step and repeating the steps of the process at least once. 3. The process of claim 1, wherein the Xe-containing feed gas comprises an effluent gas of a semiconductor-related manufacturing process. 4. The process of claim 3, wherein the effluent gas comprises Xe and at least one member selected from the group consisting of HF, F2, H2O, C4F6, O2, CO2, COF2, XeF2, CF4 and SiF4, is passed through a surge vessel to adsorb at least one of H2O, CO2, and fluorinated molecules from the effluent gas, and is diluted with N2 to provide the feed gas for feeding into the adsorption apparatus. 5. The process of claim 1, wherein the initial concentration of xenon is 0.1% to 5.0%. 6. The process of claim 1, wherein P1 is from 100 to 1 torr, and P2 is from 10 to 0.001 torr. 7. The process of claim 1, wherein P1 is from 50 to 5 torr, and P2 is from 5 to 0.01 torr. 8. The process of claim 1, wherein P1 is from 25 to 5 torr, and P2 is from 3 to 0.5 torr. 9. The process of claim 1, wherein the adsorbent comprises at least one member selected from the group consisting of an alumina, a zeolite, a silica gel and an activated carbon. 10. The process of claim 1, wherein the adsorbent consists essentially of particles having a diameter of 0.5 to 3.0 mm. 11. The process of claim 1, wherein a xenon recovery rate is at least 80%. 12. The process of claim 1, wherein the process is conducted in a vacuum swing adsorption apparatus containing at least one adsorption vessel. 13. The process of claim 1, wherein the evacuating the first part of gas is venting the first part of gas. 14. The process of claim 1, wherein the evacuating the first part of gas is recycling the first part of gas into the feeding step. 15. A process of recovering xenon from a Xe-containing feed gas, comprising the steps of: providing an adsorption vessel containing an adsorbent having a Xe/N2 selectivity ratio of less than 65;feeding the Xe-containing feed gas into the adsorption vessel, wherein the Xe-containing feed gas comprises an initial concentration of nitrogen greater than 50% and an initial concentration of xenon of at least 0.05%;evacuating the adsorption vessel by reducing pressure from atmospheric pressure to below atmospheric pressure, wherein the evacuating contains two parts: (1) recycling a first part of gas into the feeding step, and (2) recovering a first xenon-enriched gas when the below atmospheric pressure reaches P1;purging the adsorption vessel when the below atmospheric pressure reaching P2 to recover a second xenon-enriched gas, wherein the purging is maintained at the subatmospheric pressure P2; andcombining the first xenon-enriched gas and the second xenon-enriched gas to provide a product gas comprising a final concentration of xenon at least 20 times greater than the initial concentration of xenon;wherein P1 is equal to or greater than P2. 16. The process of claim 15, further comprising repressurizing the adsorption vessel after the purging step and repeating the steps of the process at least once. 17. The process of claim 15, wherein the Xe-containing feed gas comprises an effluent gas of a semiconductor-related manufacturing process; and the effluent gas comprises Xe and at least one member selected from the group consisting of HF, F2, H2O, C4F6, O2, CO2, COF2, XeF2, CF4 and SiF4, is passed through a surge vessel to adsorb at least one of H2O, CO2, and fluorinated molecules from the effluent gas, and is diluted with N2 to provide the feed gas for feeding into the adsorption apparatus. 18. The process of claim 15, wherein the initial concentration of xenon is 0.1% to 5.0%, the adsorbent comprises at least one member selected from the group consisting of an alumina, a zeolite, a silica gel and an activated carbon, P1 is from 100 to 1 torr, and P2 is from 10 to 0.001 torr, and the process is conducted in a vacuum swing adsorption apparatus containing at least one adsorption vessel.
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