A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a reducing agent, thereby for
A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a reducing agent, thereby forming a seed layer. In one arrangement, the reducing agent comprises one or more organic compounds that contain at least one functional group selected from the group consisting of —OH, —CHO, and —COOH. In another arrangement, the reducing agent comprises an electric current.
대표청구항▼
1. A method of depositing ruthenium oxide on a substrate in a reaction chamber by an atomic layer deposition process comprising: providing a pulse of a ruthenium source into the reaction chamber;purging the reaction chamber of excess ruthenium source;providing a pulse of an oxygen source into the re
1. A method of depositing ruthenium oxide on a substrate in a reaction chamber by an atomic layer deposition process comprising: providing a pulse of a ruthenium source into the reaction chamber;purging the reaction chamber of excess ruthenium source;providing a pulse of an oxygen source into the reaction chamber; andpurging the reaction chamber of excess oxygen source,the method additionally comprising after purging the reaction chamber of excess ruthenium compound and prior to providing a pulse of an oxygen source:providing a pulse of a chemical reducing agent into the reaction chamber; andpurging the reaction chamber of excess reducing agent, wherein the chemical reducing agent chemically reduces the ruthenium source. 2. The method of claim 1, wherein the ruthenium oxide is selected from RuO2 and RuO4. 3. The method of claim 2, wherein the ruthenium oxide comprises a ternary ruthenium compound. 4. The method of claim 2, wherein the ruthenium oxide has a resistivity of about 35 μΩ-cm. 5. The method of claim 1, wherein the ruthenium source is a ruthenium halide. 6. The method of claim 5, wherein the ruthenium halide is chosen from a group consisting of RuF5 and RuF6. 7. The method of claim 1, wherein the reducing agent comprises at least one of alcohols, aldehydes, carboxylic acids, and hydrogen radicals. 8. The method of claim 1, wherein the oxygen source is chosen from a group consisting of water (H2O), hydrogen peroxide (H2O2), ozone (O3), oxygen (O2), singlet oxygen 1O2, oxygen compounds with unpaired electrons, and oxygen and OH radicals. 9. A method of depositing a thin film comprising ruthenium oxide on a substrate by a plurality of atomic layer deposition cycles, each cycle comprising contacting the substrate with alternating vapor phase pulses of a Ru compound and an oxygen compound, wherein each cycle additionally comprises contacting the substrate with a reducing agent that chemically reduces the Ru compound. 10. The method of claim 9, wherein the ruthenium oxide is selected from RuO2 and RuO4. 11. The method of claim 9, wherein the ruthenium oxide comprises a ternary ruthenium compound. 12. The method of claim 11, wherein the thin film additionally comprises strontium. 13. The method of claim 12, wherein the substrate is alternately contacted with the ruthenium compound, the oxygen compound and a strontium compound. 14. The method of claim 13, wherein the film comprises SrRuO3. 15. The method of claim 9, wherein the ruthenium compound is a ruthenium halide. 16. The method of claim 15, wherein the ruthenium halide is chosen from a group consisting of RuF5 and RuF6. 17. The method of claim 9, wherein the oxygen compound is selected from a group consisting of water (H2O), hydrogen peroxide (H2O2), ozone (O3), oxygen (O2), singlet oxygen (1O2), oxygen compounds with unpaired electrons, and OH radicals. 18. The method of claim 9 comprising at least three deposition cycles. 19. The method of claim 9, wherein the reducing agent is an organic reducing agent. 20. The method of claim 9, wherein the thin film is used as an electrode. 21. The method of claim 20, wherein the electrode is the gate electrode of a transistor. 22. The method of claim 20, wherein the electrode is part of a capacitor.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (135)
Sneh Ofer ; Galewski Carl J., Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition.
Hadyn N. G. Wadley ; Xiaowang Zhou ; Junjie Quan, Apparatus and method for intra-layer modulation of the material deposition and assist beam and the multilayer structure produced therefrom.
Jin Sungho ; Klemmer Timothy J. ; Tiefel ; deceased Thomas Henry ; Van Dover Robert Bruce ; Zhu Wei, Article comprising anisotropic Co-Fe-Cr-N soft magnetic thin films.
Frijlink Peter M. (Crosne FRX), Device comprising a flat susceptor rotating parallel to a reference surface about a shift perpendicular to this surface.
Kirlin Peter S. ; Summerfelt Scott R. ; McIntryre Paul, Diffusion barriers between noble metal electrodes and metallization layers, and integrated circuit and semiconductor devices comprising same.
Lee Woo-Hyeong ; Manchanda Lalita, Electronic components with doped metal oxide dielectric materials and a process for making electronic components with do.
Yu, Bin; Wu, David, Formation of high-k gate dielectric layers for MOS devices fabricated on strained lattice semiconductor substrates with minimized stress relaxation.
Bowers Wayne E. (Clearwater FL) Sprague Barry N. (West Haven CT), Gasoline additives and gasoline containing soluble platinum group metal compounds and use in internal combustion engines.
Park In-seon,KRX ; Kim Yeong-kwan,KRX ; Lee Sang-in,KRX ; Kim Byung-hee,KRX ; Lee Sang-min,KRX ; Park Chang-soo,KRX, Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature.
Alessandra Satta BE; Karen Maex BE; Kai-Erik Elers FI; Ville Antero Saanila FI; Pekka Juha Soininen FI; Suvi P. Haukka FI, Method for bottomless deposition of barrier layers in integrated circuit metallization schemes.
Satta, Alessandra; Maex, Karen; Elers, Kai-Erik; Saanila, Ville Antero; Soininen, Pekka Juha; Haukka, Suvi P., Method for bottomless deposition of barrier layers in integrated circuit metallization schemes.
Satta, Alessandra; Maex, Karen; Elers, Kai-Erik; Saanila, Ville Antero; Soininen, Pekka Juha; Haukka, Suvi P., Method for bottomless deposition of barrier layers in integrated circuit metallization schemes.
Gopinath,Sanjay; Dalton,Jeremie; Blackburn,Jason M.; Drewery,John; van den Hoek,Willibrordus Gerardus Maria, Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds.
Park Heung Lak,KRX ; Choi Kyeong Keun,KRX, Method for fabricating semiconductor device having a capacitor and a method of forming metal wiring on a semiconductor s.
Andricacos Panayotis Constantinou ; Cabral ; Jr. Cyril ; Parks Christopher Carr ; Rodbell Kenneth Parker ; Tsai Roger Yen-Luen, Method for forming electromigration-resistant structures by doping.
Greer,Harold F. R.; Fair,James A.; Sung,Junghwan; Draeger,Nerissa Sue, Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatus.
Bocko Peter L. (Painted Post NY) Wein William J. (Corning NY) Young Charles E. (Watkins Glen NY), Method for synthesizing MgO-Al2O3-SiO2glasses and ceramics.
Barr, Alexander L.; Venkatesan, Suresh; Clegg, David B.; Cole, Rebecca G.; Adetutu, Olubunmi; Greer, Stuart E.; Anthony, Brian G.; Venkatraman, Ramnath; Braeckelmann, Gregor; Reber, Douglas M.; Crown, Method of forming semiconductor device including interconnect barrier layers.
Pekka J. Soininen FI; Kai-Erik Elers FI; Suvi Haukka FI, Method of growing electrical conductors by reducing metal oxide film with organic compound containing -OH, -CHO, or -COOH.
Li Jianxun,SGX ; Chooi Simon,SGX ; Zhou Mei-Sheng,SGX, Method to form copper damascene interconnects using a reverse barrier metal scheme to eliminate copper diffusion.
Alessandro Cesare Callegari ; Fuad Elias Doany ; Evgeni Petrovich Gousev ; Theodore Harold Zabel, Methods for forming metal oxide layers with enhanced purity.
Boyd, John; Redeker, Fritz; Dordi, Yezdi; Yoon, Hyungsuk Alexander; Li, Shijian, Methods of post-contact back end of the line through-hole via integration.
Gardiner Robin A. ; Kirlin Peter S. ; Baum Thomas H. ; Gordon Douglas ; Glassman Timothy E. ; Pombrik Sofia ; Vaartstra Brian A., Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions.
Allardyce George R. (Nuneaton GBX) Davies Anthony J. (Nuneaton GBX) Wayness David J. (Brownsover GBX) Singh Amrik (Hillfields GBX), Process for multilayer printed circuit board manufacture.
Stephen N. Vaughn ; Peter G. Ham ; Keith H. Kuechler, Process to control conversion of C4+ and heavier stream to lighter products in oxygenate conversion reactions.
Kai-Erik Elers FI; Ville Antero Saanila FI; Sari Johanna Kaipio FI; Pekka Juha Soininen FI, Production of elemental thin films using a boron-containing reducing agent.
Rautenstrauch Valentin,CHX ; Vanhessche Koenraad P. M. ; Genet Jean-Pierre,FRX ; Lenoir Jean-Yves,FRX, Ruthenium catalysts and their use in the asymmetric hydrogenation of cyclopentenones.
Matsuo Mie,JPX ; Okano Haruo,JPX ; Hayasaka Nobuo,JPX ; Suguro Kyoichi,JPX ; Miyajima Hideshi,JPX ; Wada Jun-ichi,JPX, Semiconductor device having a metal film formed in a groove in an insulating film.
Masayuki Shimizu JP, Semiconductor device having fluorined insulating film and reduced fluorine at interconnection interfaces and method of manufacturing the same.
Marsh, Eugene P.; Uhlenbrock, Stefan, Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide and method of using same.
Nguyen Tue ; Charneski Lawrence J. ; Evans David R. ; Hsu Sheng Teng, System and method of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides.
Dubin Valery M. (Cupertino CA) Schacham-Diamand Yosi (Ithaca NY) Zhao Bin (Irvine CA) Vasudev Prahalad K. (Austin TX) Ting Chiu H. (Saratoga CA), Use of cobalt tungsten phosphide as a barrier material for copper metallization.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.