Semiconductor device and method for manufacturing the same
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/336
출원번호
US-0794120
(2010-06-04)
등록번호
US-8546210
(2013-10-01)
우선권정보
JP-2004-338229 (2004-11-22)
발명자
/ 주소
Yamamoto, Yoshiaki
Tanaka, Koichiro
Isobe, Atsuo
Ohgarane, Daisuke
Yamazaki, Shunpei
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson, Eric J.
인용정보
피인용 횟수 :
4인용 특허 :
65
초록▼
It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, an
It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.
대표청구항▼
1. A semiconductor device comprising: a layer having a first thin film transistor and a second thin film transistor, the first thin film transistor having a semiconductor film and a gate electrode;a source or drain electrode connected to the semiconductor film of the first thin film transistor, the
1. A semiconductor device comprising: a layer having a first thin film transistor and a second thin film transistor, the first thin film transistor having a semiconductor film and a gate electrode;a source or drain electrode connected to the semiconductor film of the first thin film transistor, the source or drain electrode being formed in a first opening;a wiring connected to the source or drain electrode, the wiring being formed in a second opening portion provided between the first thin film transistor and the second thin film transistor;a substrate; anda conductive film provided over the substrate;wherein the wiring and the conductive film are electrically connected to each other by pasting the layer having the first and second thin film transistors and the substrate to each other. 2. The semiconductor device according to claim 1, wherein the substrate is a film substrate. 3. The semiconductor device according to claim 1, wherein at least one of the first and second thin film transistors has a semiconductor film having a thickness of 40 to 170 nm. 4. The semiconductor device according to claim 1, wherein the gate electrode is provided over the semiconductor film. 5. A semiconductor device comprising: a layer having a first thin film transistor and a second thin film transistor, the first thin film transistor having a semiconductor film;a source or drain electrode connected to the semiconductor film of the first thin film transistor, the source or drain electrode being formed in a first opening;a wiring connected to the source or drain electrode, the wiring being formed in a plurality of second openings provided between the first thin film transistor and the second thin film transistor;a substrate; anda conductive film provided over the substrate;wherein the wiring and the conductive film are electrically connected to each other by pasting the layer having the first and second thin film transistors and the substrate to each other. 6. The semiconductor device according to claim 5, wherein the substrate is a film substrate. 7. The semiconductor device according to claim 5, wherein at least one of the first and second thin film transistors has a semiconductor film having a thickness of 40 to 170 nm. 8. The semiconductor device according to claim 5, further comprising: a gate electrode over the semiconductor film. 9. A semiconductor device comprising: a layer having a first thin film transistor and a second thin film transistor, the first thin film transistor having a semiconductor film and a gate electrode;a source or drain electrode connected to the semiconductor film of the first thin film transistor, the source or drain electrode being formed in a first opening;a wiring connected to the source or drain electrode, the wiring being formed in a second opening portion provided between the first thin film transistor and the second thin film transistor;a substrate; anda conductive film provided over the substrate;wherein the wiring and the conductive film are electrically connected to each other via an adhesive layer. 10. The semiconductor device according to claim 9, wherein the substrate is a film substrate. 11. The semiconductor device according to claim 9, wherein at least one of the first and second thin film transistors has a semiconductor film having a thickness of 40 to 170 nm. 12. The semiconductor device according to claim 9, wherein the adhesive layer comprises an adhesive agent and conductive particles. 13. A semiconductor device comprising: a layer having a first thin film transistor and a second thin film transistor, the first thin film transistor having a semiconductor film;a source or drain electrode connected to the semiconductor film of the first thin film transistor, the source or drain electrode being formed in a first opening;a wiring connected to the source or drain electrode, the wiring being formed in a plurality of second openings provided between the first thin film transistor and the second thin film transistor;a substrate; anda conductive film provided over the substrate;wherein the wiring and the conductive film are electrically connected to each other via an adhesive layer. 14. The semiconductor device according to claim 13, wherein the substrate is a film substrate. 15. The semiconductor device according to claim 13, wherein at least one of the first and second thin film transistors has a semiconductor film having a thickness of 40 to 170 nm. 16. The semiconductor device according to claim 13, wherein the adhesive layer comprises an adhesive agent and conductive particles.
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