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Semiconductor device and method for manufacturing the same

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/336
출원번호 US-0794120 (2010-06-04)
등록번호 US-8546210 (2013-10-01)
우선권정보 JP-2004-338229 (2004-11-22)
발명자 / 주소
  • Yamamoto, Yoshiaki
  • Tanaka, Koichiro
  • Isobe, Atsuo
  • Ohgarane, Daisuke
  • Yamazaki, Shunpei
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
    Robinson, Eric J.
인용정보 피인용 횟수 : 4  인용 특허 : 65

초록

It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, an

대표청구항

1. A semiconductor device comprising: a layer having a first thin film transistor and a second thin film transistor, the first thin film transistor having a semiconductor film and a gate electrode;a source or drain electrode connected to the semiconductor film of the first thin film transistor, the

이 특허에 인용된 특허 (65)

  1. Kimura,Mutsumi, Active matrix display device and thin film transistor display device.
  2. Matsumoto Hiroshi (Hachioji JPX), Active matrix liquid crystal display having a peripheral driving circuit element.
  3. Imura, Hironori, Active matrix organic EL display device and method of forming the same.
  4. Park, Jae-Yong; Park, Joon-Kyu, Active matrix organic electroluminescent display device simplifying fabricating process.
  5. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Nakajima Setsuo,JPX ; Arai Yasuyuki,JPX, Display device and method of fabricating involving peeling circuits from one substrate and mounting on other.
  6. Yamazaki,Shunpei; Nakajima,Setsuo, Display device and method of manufacturing the same.
  7. Yamauchi,Yukio; Fukunaga,Takeshi, EL display device, driving method thereof, and electronic equipment provided with the EL display device.
  8. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Yamaguchi Naoaki,JPX ; Awane Katunobu,JPX ; Funada Fumiaki,JPX ; Yamamoto Yoshitaka,JPX, Electro-optical device and method of fabricating same.
  9. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Electro-optical device having silicon nitride interlayer insulating film.
  10. Ikushima,Kimiya; Komobuchi,Hiroyoshi; Baba,Asako; Uchida,Mikiya, Electronic device and method of manufacturing the same.
  11. Jacobs Scott L. (Apex NC), Extended integration semiconductor structure with wiring layers.
  12. Tanabe Yoshikazu,JPX ; Asano Isamu,JPX ; Yoshida Makoto,JPX ; Yamamoto Naoki,JPX ; Saito Masayoshi,JPX ; Natsuaki Nobuyoshi,JPX, Fabrication process of a semiconductor integrated circuit device.
  13. Murade, Masao, LCD having auxiliary capacitance lines and light shielding films electrically connected via contact holes.
  14. Yamazaki, Shunpei; Shibata, Hiroshi; Tanaka, Koichiro; Hiroki, Masaaki; Akiba, Mai, Laser irradiation method and method of manufacturing a semiconductor device.
  15. Yamazaki, Shunpei; Takayama, Toru, Light emitting device and electronic apparatus.
  16. Yamazaki,Shunpei; Takayama,Toru, Light emitting device and electronic apparatus.
  17. Yamazaki, Shunpei; Fukunaga, Takeshi; Koyama, Jun; Inukai, Kazutaka, Light emitting device and manufacturing method thereof.
  18. Yamazaki, Shunpei; Takayama, Toru; Akiba, Mai, Light emitting device and method of manufacturing the same.
  19. Yamazaki,Shunpei; Konuma,Toshimitsu; Nishi,Takeshi, Light emitting device and method of manufacturing the same.
  20. Yamazaki,Shunpei; Takayama,Toru; Akiba,Mai, Light emitting device and method of manufacturing the same.
  21. Kim,Dong Gyu; Kim,Sang Soo; Lee,Sang Wook, Liquid crystal display.
  22. Tamura,Tomoko; Ogita,Kaori; Dairiki,Koji; Maruyama,Junya, Manufacturing method of semiconductor device.
  23. Yamazaki,Shunpei; Takayama,Toru; Kanno,Yohei, Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device.
  24. Yamazaki, Shunpei, Method for manufacturing semiconductor device, and semiconductor device and electronic device.
  25. Yamazaki,Shunpei, Method for manufacturing semiconductor device, and semiconductor device and electronic device.
  26. Zhang Hongyong,JPX, Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor.
  27. Yamazaki Shunpei,JPX, Method for producing semiconductor device.
  28. Yamazaki,Shunpei; Takemura,Yasuhiko; Nakajima,Setsuo; Arai,Yasuyuki, Method of manufacturing a display device having a driver circuit attached to a display substrate.
  29. Koo, Jae-Bon; Shin, Dong-Chan, Method of manufacturing a flat panel display incorporating a power supply layer and a storage capacitor element.
  30. Yamazaki,Shunpei; Shibata,Hiroshi; Tanaka,Koichiro; Hiroki,Masaaki; Akiba,Mai, Method of manufacturing a semiconductor device that includes patterning sub-islands.
  31. Yamazaki Shunpei,JPX ; Arai Yasuyuki,JPX ; Teramoto Satoshi,JPX, Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bo.
  32. Shunpei Yamazaki JP; Yasuyuki Arai JP; Satoshi Teramoto JP, Method of manufacturing flexible display with transfer from auxiliary substrate.
  33. Miyasaka, Mitsutoshi; Matsueda, Yojiro; Takenaka, Satoshi, Methodology for fabricating a thin film transistor, including an LDD region, from amorphous semiconductor film deposited at 530° C. or less using low pressure chemical vapor deposition.
  34. Furukawa, Yukio; Ouchi, Toshihiko, Optical device structure and fabrication method thereof.
  35. Hsu Fu-Chieh (Saratoga CA) Pai Pei-Lin (Cupertino CA), Programmable antifuse structure, process, logic cell and architecture for programmable integrated circuits.
  36. Chen, Kuang Neng; Elmegreen, Bruce G.; Kim, Deok Kee; Kothandaraman, Chandrasekharan; Krusin Elbaum, Lia; Lam, Chung H.; Newns, Dennis M.; Park, Byeongju; Purushothaman, Sampath, Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material.
  37. Yamazaki, Shunpei; Ohtani, Hisashi; Nakajima, Setsuo, Semiconductor device.
  38. Jun Koyama JP, Semiconductor device and manufacturing method of the same.
  39. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Semiconductor device and manufacturing method therefor.
  40. Ishikawa, Akira, Semiconductor device and manufacturing method thereof.
  41. Ishikawa,Akira, Semiconductor device and manufacturing method thereof.
  42. Nagao,Ritsuko; Hayakawa,Masahiko, Semiconductor device and manufacturing method thereof.
  43. Yamazaki,Shunpei, Semiconductor device and manufacturing method thereof.
  44. Hayakawa,Masahiko; Sakama,Mitsunori; Toriumi,Satoshi, Semiconductor device and method for manufacturing the same.
  45. Yamazaki,Shunpei, Semiconductor device and method for manufacturing the same, and electric appliance.
  46. Yamazaki,Shunpei; Asami,Taketomi; Takayama,Toru; Kawasaki,Ritsuko; Adachi,Hiroki; Sakamoto,Naoya; Hayakawa,Masahiko; Shibata,Hiroshi; Arai,Yasuyuki, Semiconductor device and method of fabricating the same.
  47. Yamazaki,Shunpei; Koyama,Jun, Semiconductor device and method of fabricating the same.
  48. Arao, Tatsuya; Isobe, Atsuo; Takayama, Toru, Semiconductor device and method of manufacturing the same.
  49. Imai,Keitaro; Takayama,Toru; Goto,Yuugo; Maruyama,Junya; Ohno,Yumiko, Semiconductor device and method of manufacturing the same.
  50. Yamazaki Shunpei,JPX ; Fujimoto Etsuko,JPX ; Isobe Atsuo,JPX ; Takayama Toru,JPX ; Fukuchi Kunihiko,JPX, Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and process for production thereof.
  51. Ishikawa, Akira, Semiconductor device having a buffer layer against stress.
  52. Arao, Tatsuya; Isobe, Atsuo; Takayama, Toru, Semiconductor device having a storage capacitor.
  53. Tsutsui,Masafumi; Umimoto,Hiroyuki; Akamatsu,Kaori, Semiconductor device having internal stress film.
  54. Ishii Kazutoshi,JPX ; Inoue Naoto,JPX ; Maemura Koushi,JPX ; Nakanishi Shoji,JPX ; Kojima Yoshikazu,JPX ; Kadoi Kiyoaki,JPX ; Akiba Takao,JPX ; Moya Yasuhiro,JPX ; Kuhara Kentaro,JPX, Semiconductor dicing and assembling method.
  55. Tatsuya Shimoda JP; Satoshi Inoue JP; Wakao Miyazawa JP, Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method.
  56. Spitzer Mark B. (Sharon MA) Salerno Jack P. (Waban MA) Zavracky Paul M. (Norwood MA), Single crystal silicon arrayed devices for projection displays.
  57. Katayama, Shigenori, Substrate device manufacturing method and substrate device, electrooptical device manufacturing method and electrooptical device and electronic unit.
  58. Asai,Motoo, Substrate for mounting IC chip, multilayerd printed circuit board, and device for optical communication.
  59. Shimoda, Tatsuya; Utsunomiya, Sumio, TRANSFER METHOD, METHOD OF MANUFACTURING THIN FILM DEVICES, METHOD OF MANUFACTURING INTEGRATED CIRCUITS, CIRCUIT BOARD AND MANUFACTURING METHOD THEREOF, ELECTRO-OPTICAL APPARATUS AND MANUFACTURING ME.
  60. Hoffman,Randy; Wager,John; Hong,David; Chiang,Hai, Thin film transistor with a passivation layer.
  61. Fukuda, Kaichi; Uemoto, Tsutomu; Hirayama, Hideo; Kawamura, Shinichi; Toriyama, Shigetaka, Thin film transistor, method of manufacturing the same and thin film transistor liquid crystal display device.
  62. Kawasaki Ritsuko,JPX ; Kitakado Hidehito,JPX ; Kasahara Kenji,JPX ; Yamazaki Shunpei,JPX, Thin film transistors having ldd regions.
  63. Takechi, Kazushige; Hirano, Naoto, Thin-film transistor elements and methods of making same.
  64. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Nakajima Setsuo,JPX ; Arai Yasuyuki,JPX, Using a temporary substrate to attach components to a display substrate when fabricating a passive type display device.
  65. Ohtani, Hisashi; Yamazaki, Shunpei, Wiring line and manufacture process thereof, and semiconductor device and manufacturing process thereof.

이 특허를 인용한 특허 (4)

  1. Ke, Tsung-Ying; Wang, Pin-Fan; Hsu, Tsi-Hsuan; Lee, Wei-Te, Active array substrate and manufacturing method thereof.
  2. Ke, Tsung-Ying; Wang, Pin-Fan; Hsu, Tsi-Hsuan; Lee, Wei-Te, Active array substrate and manufacturing method thereof.
  3. Chida, Akihiro; Oikawa, Yoshiaki; Kawanabe, Chiho, Method for manufacturing semiconductor device.
  4. Chida, Akihiro; Oikawa, Yoshiaki; Kawanabe, Chiho, Method for manufacturing semiconductor device.
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