IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0384152
(2010-07-14)
|
등록번호 |
US-8546276
(2013-10-01)
|
국제출원번호 |
PCT/IB2010/053219
(2010-07-14)
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§371/§102 date |
20120323
(20120323)
|
국제공개번호 |
WO2011/007323
(2011-01-20)
|
발명자
/ 주소 |
- Gatineau, Julien
- Ko, Changhee
|
출원인 / 주소 |
- L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
2 인용 특허 :
4 |
초록
▼
Disclosed are group IV metal-containing precursors and their use in the deposition of group IV metal-containing films {nitride, oxide and metal) at high process temperature. The use of cyclopentadienyl and imido ligands linked to the metal center secures thermal stability, allowing a large depositio
Disclosed are group IV metal-containing precursors and their use in the deposition of group IV metal-containing films {nitride, oxide and metal) at high process temperature. The use of cyclopentadienyl and imido ligands linked to the metal center secures thermal stability, allowing a large deposition temperature window, and low impurity contamination. The group IV metal (titanium, zirconium, hafnium)-containing f{umlaut over (υ)}m depositions may be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD.
대표청구항
▼
1. A method for depositing a group IV metal-containing film onto one or more substrates, comprising: a) providing a reactor and at least one substrate disposed in the reactor;b) providing a metal-containing precursor having the general formula: M(NR)X1mX2n (I)wherein: M is titanium, hafnium, or zir
1. A method for depositing a group IV metal-containing film onto one or more substrates, comprising: a) providing a reactor and at least one substrate disposed in the reactor;b) providing a metal-containing precursor having the general formula: M(NR)X1mX2n (I)wherein: M is titanium, hafnium, or zirconium;R is selected from H; a C1-C4 linear, branched, or cyclic alkyl or perfluoroalkyl group; or a C1-C4 linear, branched, or cyclic alkylsilyl or perfluoroalkylsilyl group;X1 is selected from the group consisting of cyclopentadienyl, pentadienyl, cyclohexadienyl, hexadienyl, cycloheptadienyl, heptadienyl, cyclooctadienyl, and octadienyl,which may be substituted by a C1-C4 linear, branched, or cyclic alkyl group; C1-C4 linear, branched, or cyclic alkylsilyl group; C1-C4 alkylamino group; a C1-C4 linear, branched, or cyclic fluoroalkyl group; or combinations thereof;X2 is independently selected from the group consisting of hydrogen; oxygen; a linear, branched, or cyclic C1-C8 alkyl; linear, branched, or cyclic C1-C8 alkoxy; linear, branched, or cyclic C1-C8 alkylamino; linear, branched, or cyclic C1-C8 perfluoroalkyl; C1-C4 linear, branched, or cyclic alkylsilyl; linear, branched, or cyclic C1-C8 perfluoroalkoxy; C1-C8 alkene; formamidinate; amidinate; guamidinate; carbonyl; nitrile; isocyanate; ethylene; halogen; alkyldienes; cycloalkyldienes; norbornadiene; diazabutadiene; ethylenediamine; ethanolamine; β-diketonate; β-diketiminate; and β-enaminoketonate,which may be substituted by C1-C4 linear, branched, or cyclic alkyl group; C1-C4 alkylamino group; a C1-C4 linear, branched, or cyclic fluoroalkyl group; or combinations thereof;m=1; andn=1;c) vaporizing the metal-containing precursor to form a vaporized precursor;d) introducing the vaporized precursor into the reactor; ande) depositing at least part of the vaporized precursor onto the substrate to form a group IV metal-containing film. 2. The method of claim 1, wherein X1=Cp, and X2 is selected from the group consisting of linear, branched, or cyclic C1-C8 alkylamino group; formamidinate; amidinate; alkyldienes; cycloalkyldienes; norbornadiene; diazabutadiene; ethylenediamine; ethanolamine; β-diketonate; β-diketiminate; and β-enaminoketonate. 3. The method of claim 2, wherein the metal-containing precursor is selected from the group consisting of: TiCp(NtBu)(NMe2), TiCp(NtBu)(NEt2), TiCp(NtBu)(N(EtMe)2),TiCp(NtBu)(N(SiMe3)2), TiCp(NtBu)[MeC(NSiMe3)2], TiCp(NtBu)[MeC(NiPr)2],TiCp(NtBu)[MeC(NtBu)2], TiCp(NtBu)[MeC(NtBuEt)2],TiCp(NtBu)[HC(C(Me)N(Me))2], TiCp(NtBu)[HC(C(Me)N(Et))2],HfCp(NtBu)(NMe2), HfCp(NtBu)(NEt2), HfCp(NtBu)(N(EtMe)2),HfCp(NtBu)(N(SiMe3)2), HfCp(NtBu)[MeC(NSiMe3)2], HfCp(NtBu)[MeC(NiPr)2],HfCp(NtBu)[MeC(NtBu)2], HfCp(NtBu)[MeC(NtBuEt)2],HfCp(NtBu)[HC(C(Me)N(Me))2], HfCp(NtBu)[HC(C(Me)N(Et))2],ZrCp(NtBu)(NMe2), ZrCp(NtBu)(NEt2), ZrCp(NtBu)(N(EtMe)2),ZrCp(NtBu)(N(SiMe3)2), ZrCp(NtBu)[MeC(NSiMe3)2], ZrCp(NtBu)[MeC(NiPr)2],ZrCp(NtBu)[MeC(NtBu)2], ZrCp(NtBu)[MeC(NtBuEt)2],ZrCp(NtBu)[HC(C(Me)N(Me))2], and ZrCp(NtBu)[HC(C(Me)N(Et))2]. 4. The method of claim 1, wherein the depositing step (e) comprises a chemical vapor deposition (CVD) or an atomic layer deposition (ALD) process. 5. The method of claim 1, wherein the group IV metal-containing film is selected from the group consisting of a group IV metal film, a group IV metal oxide film, and a group IV metal nitride film. 6. The method of claim 1, further comprising introducing precursors of other metallic elements into the reactor to tune the composition of the group IV metal-containing film. 7. The method of claim 1, wherein the reactor has a temperature between about 50° C. and about 600° C., preferably between about 200° C. and about 500° C., and more preferably between about 300° C. and about 400° C. 8. The method of claim 1, wherein the reactor has a pressure between about 0.0001 Torr and about 1000 Torr, preferably between about 0.1 Torr and about 10 Torr. 9. The method of claim 1, further comprising: a) introducing a reactant into the reactor; andb) reacting the reactant with the vaporized precursor. 10. The method of claim 9, wherein the reactant comprises a reducing agent. 11. The method of claim 10, wherein the reactant is selected from the group consisting of N2, H2, NH3, SiH4, Si2H6, Si3H8, (CH3)2SiH2, (C2H5)2SiH2, (CH3)SiH3, (C2H5)SiH3, phenyl silane, N2H4, N(SiH3)3, N(CH3)H2, N(C2H5)H2, N(CH3)2H, N(C2H5)2H, N(CH3)3, N(C2H5)3, (SiMe3)2NH, (CH3)HNNH2, (CH3)2NNH2, phenyl hydrazine, N-containing molecules, B2H6, 9-borabicyclo[3,3,1]nonane, dihydrobenzenfuran, pyrazoline, trimethylaluminium, dimethylzinc, diethylzinc, radical species thereof, and mixtures thereof. 12. The method of claim 9, wherein the reactant comprises an oxidizing agent. 13. The method of claim 12, wherein the reactant is selected from the group consisting of O2, O3, H2O, H2O2, NO, NO2, carboxylic acids, formic acid, acetic acid, propionic acid, radical species thereof, and mixtures thereof. 14. A group IV metal-containing film-coated substrate comprising the product of the method of claim 1.
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