Device and method for material processing by means of laser radiation
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01S-003/10
A61B-018/18
출원번호
US-0786421
(2007-04-11)
등록번호
US-8553735
(2013-10-08)
발명자
/ 주소
Bischoff, Mark
Muehlhoff, Dirk
Stobrawa, Gregor
출원인 / 주소
Carl Zeiss Meditec AG
대리인 / 주소
Patterson Thuente Pedersen, P.A.
인용정보
피인용 횟수 :
0인용 특허 :
9
초록▼
In a device for material processing by means of laser radiation, said device comprising a source of laser radiation emitting pulsed laser radiation for interaction with the material; optics focusing the pulsed processing laser radiation to a center of interaction in the material; a scanning unit shi
In a device for material processing by means of laser radiation, said device comprising a source of laser radiation emitting pulsed laser radiation for interaction with the material; optics focusing the pulsed processing laser radiation to a center of interaction in the material; a scanning unit shifting the positions of the center of interaction within the material, wherein each processing laser pulse interacts with the material in a zone surrounding the center of interaction assigned to said laser pulse so that material is separated in the zones of interaction; and a control unit which controls the scanning unit and the source of laser radiation such that a cut surface is produced in the material by sequential arrangement of zones of interaction, it is envisaged that the control unit controls the source of laser radiation and the scanning unit such that adjacent centers of interaction are located at a spatial distance a ≦10 μm from each other.
대표청구항▼
1. A device for material processing by means of laser radiation, said device comprising a source of laser radiation emitting pulsed laser radiation for interaction with the material; optics focusing the pulsed processing laser radiation to a center of interaction in the material; a scanning unit shi
1. A device for material processing by means of laser radiation, said device comprising a source of laser radiation emitting pulsed laser radiation for interaction with the material; optics focusing the pulsed processing laser radiation to a center of interaction in the material; a scanning unit shifting the position of the center of interaction within the material, wherein each processing laser pulse interacts with the material in a zone surrounding the center of interaction assigned to said laser pulse so that material is separated in the zones of interaction; and a control unit which controls the scanning unit and the source of laser radiation such that a cut surface is produced in the material by a plurality of zones of interaction, wherein the control unit controls the source of laser radiation and the scanning unit such that merely a perforation of the material is generated in the cut surface, whereby not all of the zones of interaction located within the cut surface adjoin or overlap each other, so that material bridges, in which the material remains connected, remain between regions in which the material is being separated. 2. The device as claimed in claim 1, wherein the control device controls the source of laser radiation and the scanning unit such that the cut surface comprises an additional surface portion, the cut surface and the additional surface portion being provided with different numbers and/or strengths of material bridges. 3. A device for material processing by means of laser radiation, said device comprising a source of laser radiation emitting pulsed laser radiation for interaction with the material; optics focusing the pulsed processing laser radiation to a center of interaction in the material; a scanning unit shifting the positions of the center of interaction within the material, wherein each processing laser pulse interacts with the material in a zone surrounding the center of interaction assigned to said laser pulse so that material is separated in the zones of interaction; and a control unit which controls the scanning unit and the source of laser radiation such that a cut surface is produced in the material by sequential arrangement of zones of interaction, wherein the control unit controls the source of laser radiation and the scanning unit such that adjacent centers of interaction are located at a spatial distance a ≦10 μm from each other. 4. The device of claim 3, wherein the fluence of each processing laser pulse is above a threshold value M, which is given as M=3.3 J/cm2−(2.4 J/cm2)/(1+(a/r2)2)wherein a is the spacing between two adjacent centers of interaction and r is a parameter, with 3 μm≦r≦10 μm, andwherein the fluence F of each processing laser pulse is no more than 3 J/cm2 above the threshold value M. 5. The device of claim 3, wherein the control unit controls the source of laser radiation and the scanning unit such that the cut surface is composed of at least first and second partial cut surfaces, with the first partial cut surface being formed by control of the source of laser radiation and the scanning unit, and the second partial cut surface being formed by control of the source of laser radiation so as to cause a processing laser pulse fluence F>3 J/cm2, and wherein the control unit controls the source of laser radiation and the scanning unit such that the first partial surface surrounds the second partial surface. 6. A device for material processing by means of laser radiation, said device comprising a source of laser radiation emitting pulsed laser radiation for interaction with the material; optics focusing the pulsed processing laser radiation onto a center of interaction in the material; a scanning unit adjusting the position of the center of interaction within the material, wherein each processing laser pulse interacts with the material in a zone surrounding the center of interaction assigned to said laser pulse so that material is separated in the zones of interaction; and a control unit which controls the scanning unit and the source of laser radiation such that that a cut surface is produced in the material by sequential arrangement of zones of interaction, wherein for each center of interaction the treatment laser pulse fluence F is below 5 J/cm2; wherein the control unit controls the source of laser radiation and the scanning unit such that the cut surface comprises an additional surface portion, with the cut surface being formed by control of the source of laser radiation and the scanning unit, and the additional surface portion being formed by control of the source of laser radiation so as to cause a processing laser pulse fluence F>3 J/cm2. 7. The device of claim 6, wherein the control unit controls the source of laser radiation and the scanning unit such that the additional surface portion surrounds the cut surface. 8. A device for material processing by means of laser radiation, said device comprising a source of laser radiation emitting pulsed laser radiation for interaction with the material; optics focusing the pulsed processing laser radiation onto a center of interaction in the material; a scanning unit adjusting the position of the center of interaction within the material, wherein each processing laser pulse interacts with the material in a zone surrounding the center of interaction assigned to said laser pulse so that material is separated in the zones of interaction; and a control unit which controls the scanning unit and the source of laser radiation such that that a cut surface is produced in the material by sequential arrangement of zones of interaction, wherein for each center of interaction the treatment laser pulse fluence F is below 5 J/cm2, wherein the spatial distance a of the centers of interaction of two subsequent processing laser pulses is smaller than a size d of the focus so that sequentially produced zones of interaction overlap in the material, and wherein the fluence F of each processing laser pulse is below a threshold value M, above which an optical breakthrough forms in the material,wherein the fluence of each processing laser pulse is above a threshold value M, which is given as M=3.3 J/cm2−(2.4 J/cm2)/(1+(a/r2)2)wherein a is the spacing between two adjacent centers of interaction and r is a parameter, with 3 μm≦r≦10 μm. 9. The device as claimed in claim 1, wherein the fluence of each processing laser pulse is above a threshold value M, which is given as M=3.3 J/cm2−(2.4 J/cm2)/(1+(a/r2)2)wherein a is the spacing between two adjacent centers of interaction and r is a parameter, with 3 μm≦r≦10 μm. 10. The device as claimed in claim 3, wherein the fluence of each processing laser pulse is above a threshold value M, which is given as M=3.3 J/cm2−(2.4 J/cm2)/(1+(a/r2)2)wherein a is the spacing between two adjacent centers of interaction and r is a parameter, with 3 μm≦r≦10 μm. 11. A device for material processing by means of laser radiation, said device comprising a source of laser radiation emitting pulsed laser radiation for interaction with the material; optics focusing the pulsed processing laser radiation onto a center of interaction in the material; a scanning unit adjusting the position of the center of interaction within the material, wherein each processing laser pulse interacts with the material in a zone surrounding the center of interaction assigned to said laser pulse so that material is separated in the zones of interaction; and a control unit which controls the scanning unit and the source of laser radiation such that that a cut surface is produced in the material by sequential arrangement of zones of interaction, wherein for each center of interaction the treatment laser pulse fluence F is below 5 J/cm2, wherein the fluence of each processing laser pulse is above a threshold value M, which is given as M=3.3 J/cm2−(2.4 J/cm2)/(1+(a/r2)2)wherein a is the spacing between two adjacent centers of interaction and r is a parameter, with 3 μm≦r≦10 μm. 12. The device as claimed in claim 9, wherein the fluence F of each processing laser pulse is no more than 3 J/cm2 above the threshold value M. 13. The device as claimed in claim 1, wherein the control unit controls the source of laser radiation and the scanning unit such that the cut surface is complemented by an additional surface, with the cut surface being formed by control of the source of laser radiation and the scanning unit, and the additional sin surface portion being formed by control of the source of laser radiation so as to cause a processing laser pulse fluence F>3 J/cm2. 14. The device as claimed in claim 3, wherein the control unit controls the source of laser radiation and the scanning unit such that the cut surface comprises an additional surface portion, with the cut surface being formed by control of the source of laser radiation and the scanning unit, and the additional surface portion being formed by control of the source of laser radiation so as to cause a processing laser pulse fluence F>3 J/cm2. 15. The device as claimed in claim 13, wherein the control unit controls the source of laser radiation and the scanning unit such that the additional surface portion surrounds the cut surface. 16. The device as claimed in claim 3, wherein the spatial distance a of the centers of interaction of two subsequent processing laser pulses is smaller than a size d of the focus so that sequentially produced zones of interaction overlap in the material. 17. The device as claimed in claim 13, wherein the spatial distance a of the centers of interaction of two subsequent processing laser pulses is smaller than a size d of the focus so that sequentially produced zones of interaction overlap in the material. 18. The device as claimed in claim 16, wherein the fluence F of each processing laser pulse is below a threshold value M, above which an optical breakthrough forms in the material. 19. The device as claimed in claim 18, wherein the fluence of each processing laser pulse is below the threshold value M, where M=3.3 J/cm2−(2.4 J/cm2)/(1+(a/r2)2)wherein a is the spacing between two adjacent centers of interaction and r is a parameter, with 3 μm≦r≦10 μm. 20. A device for material processing by means of laser radiation, said device comprising a source of laser radiation emitting pulsed laser radiation for interaction with the material; optics focusing the pulsed processing laser radiation to a center of interaction in the material along an optical axis; a scanning unit shifting the positions of the center of interaction within the material, wherein each processing laser pulse interacts with the material in a zone surrounding the center of interaction assigned to said laser pulse so that material is separated in the zones of interaction; and a control unit which controls the scanning unit and the source of laser radiation such that a cut surface is produced in the material by sequential arrangement of zones of interaction, wherein the control unit controls the source of laser radiation and the scanning unit such that the cut surface comprises two portions located adjacent to each other along the optical axis and irradiates these at least partially with processing laser radiation pulses applied within a time interval t≦5 s. 21. The device as claimed in claim 20, wherein the control unit divides the portions located adjacent to each other along the optical axis into respective partial cut surfaces and controls the source of laser radiation and the scanning unit such that partial cut surfaces located adjacent to each other along the optical axis are irradiated with processing laser radiation immediately following each other in time by sequential arrangement of the centers of interaction. 22. A method of material processing by means of laser radiation, wherein pulsed laser radiation is generated, is focused on centers of interaction for interaction in the material, and the position of the centers of interaction in the material is shifted, each processing laser pulse interacting with the material in a zone surrounding the center of interaction assigned to said laser pulse, so that material is separated in the zones of interaction and a cut surface is formed in the material by a plurality of zones of interaction, wherein merely a perforation of the material is generated in the cut surface, whereby not all of the zones of interaction located within the cut surface adjoin or overlap each other and, thus, material bridges in which the material remains connected remain between regions in which the material is being separated, wherein the cut surface comprises an additional surface portion, the additional surface portion being produced at a processing laser pulse fluence F>3 J/cm2, and wherein the additional surface portion surrounds the cut surface. 23. A method of material processing by means of laser radiation, wherein pulsed laser radiation is generated, is focused on centers of interaction for interaction in the material, and the position of the centers of interaction in the material is shifted, each processing laser pulse interacting with the material in a zone surrounding the center of interaction assigned to said laser pulse, so that material is separated in the zones of interaction and a cut surface is formed in the material by a plurality of zones of interaction, wherein merely a perforation of the material is generated in the cut surface, whereby not all of the zones of interaction located within the cut surface adjoin or overlap each other and, thus, material bridges in which the material remains connected remain between regions in which the material is being separated, wherein the cut surface is composed of at least a first and a second partial cut surface, the cut surface and the additional surface portion being provided with different numbers and/or strengths of material bridges. 24. A method of material processing by means of laser radiation, wherein pulsed laser radiation is generated and focused to centers of interaction in the material and the positions of the centers of interaction in the material are shifted, each processing laser pulse interacting with the material in a zone surrounding the center of interaction assigned to said laser pulse, so that material is separated in the zones of interaction, and a cut surface is produced in the material by sequential arrangement of zones of interaction, wherein adjacent zones of interaction are located at a spatial distance a ≦10 μm. 25. The method of claim 24, wherein the cut surface comprises an additional surface portion, the additional surface portion being produced at a processing laser pulse fluence F>3 J/cm2, and wherein the additional surface portion surrounds the cut surface. 26. A method of material processing by means of laser radiation, wherein pulsed laser radiation is generated, focused to centers of interaction in the material and the positions of the centers of interaction in the material are shifted, each processing laser pulse interacting with the material in a zone surrounding the center of interaction assigned to said laser pulse, so that material is separated in the zones of interaction, and a cut surface is produced in the material by sequential arrangement of zones of interaction, wherein the zones of interaction are illuminated with pulses each having a fluence F of less than 5 J/cm2; wherein the cut surface comprises an additional set surface portion, the additional surface portion being produced at a processing laser pulse fluence F>3 J/cm2. 27. The method of claim 26, wherein the additional surface portion surrounds the cut surface. 28. A method of material processing by means of laser radiation, wherein pulsed laser radiation is generated, focused to centers of interaction in the material and the positions of the centers of interaction in the material are shifted, each processing laser pulse interacting with the material in a zone surrounding the center of interaction assigned to said laser pulse, so that material is separated in the zones of interaction, and a cut surface is produced in the material by sequential arrangement of zones of interaction, wherein the zones of interaction are illuminated with pulses each having a fluence F of less than 5 J/cm2; wherein the fluence of each processing laser pulse is above a threshold value M given as M=3.3 J/cm2−(2.4 J/cm2)/(1+(a/r2)2)wherein a is the spatial spacing of the centers of interaction and r is a parameter, with 3 μm≦r≦10 μm. 29. The method as claimed in claim 24, wherein the fluence of each processing laser pulse is above a threshold value M given as M=3.3 J/cm2−(2.4 J/cm2)/(1+(a/r2)2)wherein a is the spatial spacing of the centers of interaction and r is a parameter, with 3 μm≦r≦10 μm. 30. The method as claimed in claim 28, wherein the fluence F of each processing laser pulse is no more than 3 J/cm2 above the threshold value M. 31. The method as claimed in claim 24, wherein the cut surface comprises an additional surface portion, the additional surface portion being produced at a processing laser pulse fluence F>3 J/cm2. 32. A method of material processing by means of laser radiation, wherein pulsed laser radiation is generated, is focused on centers of interaction for interaction in the material, and the position of the centers of interaction in the material is shifted, each processing laser pulse interacting with the material in a zone surrounding the center of interaction assigned to said laser pulse, so that material is separated in the zones of interaction and a cut surface is formed in the material by a plurality of zones of interaction, wherein merely a perforation of the material is generated in the cut surface, whereby not all of the zones of interaction located within the cut surface adjoin or overlap each other and, thus, material bridges in which the material remains connected remain between regions in which the material is being separated; wherein the cut surface comprises an additional cut surface portion, the additional surface portion being produced at a processing laser pulse fluence F>3 J/cm2. 33. The device of claim 6, wherein the processing laser pulse fluence is F>5 J/cm2. 34. The device of claim 13, wherein the processing laser pulse fluence is F>5 J/cm2. 35. The device of claim 26, wherein the processing laser pulse fluence is F>5 J/cm2. 36. The method of claim 32, wherein the processing laser pulse fluence is F>5 J/cm2. 37. The method of claim 5, wherein the second partial cut surface being formed by control of the source of laser radiation so as to cause a processing laser pulse fluence F>5 J/cm2. 38. The method of claim 22, wherein the second partial cut surface being formed by control of the source of laser radiation so as to cause a processing laser pulse fluence F>5 J/cm2. 39. The method of claim 25, wherein the second partial cut surface being formed by control of the source of laser radiation so as to cause a processing laser pulse fluence F>5 J/cm2.
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