IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0368206
(2012-02-07)
|
등록번호 |
US-8557672
(2013-10-15)
|
발명자
/ 주소 |
- Forbes, Leonard
- Ahn, Kie Y.
- Bhattacharyya, Arup
|
출원인 / 주소 |
|
대리인 / 주소 |
Schwegman, Lundberg & Woessner, P.A.
|
인용정보 |
피인용 횟수 :
4 인용 특허 :
209 |
초록
▼
Electronic apparatus and methods of forming the electronic apparatus may include one or more insulator layers having a refractory metal and a non-refractory metal for use in a variety of electronic systems and devices. Embodiments can include electronic apparatus and methods of forming the electroni
Electronic apparatus and methods of forming the electronic apparatus may include one or more insulator layers having a refractory metal and a non-refractory metal for use in a variety of electronic systems and devices. Embodiments can include electronic apparatus and methods of forming the electronic apparatus having a tantalum aluminum oxynitride film. The tantalum aluminum oxynitride film may be structured as one or more monolayers. The tantalum aluminum oxynitride film may be formed using atomic layer deposition. Metal electrodes may be disposed on a dielectric containing a tantalum aluminum oxynitride film.
대표청구항
▼
1. A method comprising: propagating a voltage signal along a conductive path, at least a portion of the conductive path being adjacent to one or more insulators, wherein at least a portion of the one or more insulators comprise TayAlzOxNw, where y, z, x, and w are greater than zero, and a mixture of
1. A method comprising: propagating a voltage signal along a conductive path, at least a portion of the conductive path being adjacent to one or more insulators, wherein at least a portion of the one or more insulators comprise TayAlzOxNw, where y, z, x, and w are greater than zero, and a mixture of a refractory metal and a non-refractory metal;generating a charge field associated with the voltage signal across a region of the TayAlzOxNw and the mixture between a section of the conductive path and one or more electrodes;retaining the charge field between the section of the conductive path and the one or more electrodes based on a first specified signal; andremoving at least a portion of the charge field based on a second specified signal. 2. The method of claim 1, wherein generating includes establishing a charge field across the region including one or more TayAlzOxNw amorphous regions, where y, z, x, w are integer values, and where y is 1 or 2, z is 1 or 2, x is 0, 1, 3 or 5, and w is 0 or 1 such that w is 1 only when x is 0. 3. The method of claim 1, wherein the one or more electrodes include a metal electrode. 4. The method of claim 1, wherein retaining includes transferring charge across the region. 5. The method of claim 1, wherein the one or more electrodes include two electrodes and generating the charge field includes inducing a charge field in a region between the two electrodes. 6. The method of claim 5, wherein the generating includes inducing an inversion layer along the conductive path. 7. The method of claim 5, wherein the generating includes inducing a charge depletion layer along the conductive path. 8. A method comprising: forming alternating dielectrics layers on a substrate, the layers including at least one of a refractory metal or a non-refractory metal;surrounding the alternating layers in an environment comprising at least one of a nitrogen compound or an oxygen compound; andforming one or more oxynitrides, including forming TayAlzOxNw where y, z, x, and w are greater than zero, using the alternating layers in the environment. 9. The method of claim 8, wherein forming alternating dielectric layers includes forming alternating dielectric layers of TaOxN and AlOyN, where x, and y are integers with values of 0 or 1. 10. The method of claim 8, wherein forming alternating dielectric layers includes forming alternating TayAlzOxNw layers, where y, z, x, w are integer values, and where y is 1 or 2, z is 1 or 2, x is 0, 1, 3 or 5, and w is 0 or 1 such that w is 1 only when x is 0. 11. The method of claim 8, wherein forming alternating dielectric layers includes alternating pairs of dielectric layers including at least one of a Ta2O5/Al2O3, a TaON/AlON, a Ta2O5/AlN, a TaN/Al2O3, or a TaN/AlN. 12. The method of claim 8, wherein surrounding includes surrounding the alternating layers in a microwave plasma. 13. The method of claim 8, wherein surrounding includes surrounding the alternating layers in an ambient comprising at least one of a dinitrogen, an ammonia, or a 1,1-dimethyl-hydrazine. 14. The method of claim 8, wherein forming one or more oxynitrides includes forming one or more TaAlON layers with less than 50 atomic % nitrogen. 15. The method of claim 14, wherein forming one or more oxynitride layers includes forming one or more TaAlON layers with greater than 20 atomic % oxygen. 16. A method comprising: generating a microwave plasma using a vapor comprising a nitrogen compound;forming a nitride, including forming TayAlzOxNw where y, z, x, and w are greater than zero, using an oxide layer that includes at least one of a refractory metal or a non-refractory metal exposed to the microwave plasma; andpatterning a region comprising at least one of refractory metal oxynitride or a non-refractory metal oxynitride. 17. The method of claim 16, wherein generating includes generating a microwave plasma using vapor comprising at least one of a dinitrogen, an ammonia, or a 1,1-dimethyl-hydrazine. 18. The method of claim 16, wherein the method includes forming a metal electrode on the TayAlzOxNw. 19. The method of claim 18, wherein forming the nitride includes forming TayAlzOxNw with at least one of x, y, z, or w vary in a direction substantially perpendicular to a major surface of a substrate. 20. The method of claim 18, wherein forming the nitride includes forming TaxAl1-x-y-zOyNz between two or more conductive regions. 21. The method of claim 18, wherein forming the nitride includes forming TayAlzOxNw with at least one of x, y, z, or w vary in a direction substantially parallel to a major surface of a substrate.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.