초록 ▼

A design structure is provided for interconnect structures containing various capping materials for electrical fuses and other related applications. The structure includes a first interconnect structure having a first interfacial structure and a second interconnect structure adjacent to the first st

A design structure is provided for interconnect structures containing various capping materials for electrical fuses and other related applications. The structure includes a first interconnect structure having a first interfacial structure and a second interconnect structure adjacent to the first structure. The second interconnect structure has second interfacial structure different from the first interfacial structure.

대표청구항 ▼

1. A structure comprising: a first macro having a metal wiring layer on a first level electrically connected through an opening in a first capping layer to a metal wiring layer on a second layer and a second capping layer over the metal wiring layer on the second layer which has a first electromigra

1. A structure comprising: a first macro having a metal wiring layer on a first level electrically connected through an opening in a first capping layer to a metal wiring layer on a second layer and a second capping layer over the metal wiring layer on the second layer which has a first electromigration (EM) resistance; anda second macro having a metal wiring layer on the first level electrically connected through an opening in a first capping layer to a metal wiring layer on the second layer and a second capping layer over the metal wiring layer on the second layer which has a second electromigration (EM) resistance different from the first electromigration (EM) resistance. 2. The structure of claim 1, wherein the second capping layer of the first macro is SiN and the second capping layer of the second macro is one of Co(W,P,B), Ru, Ir, Rh and Pt. 3. The structure of claim 1, wherein the second capping layer of the first and the second macro is a same material, and the second capping layer of the second macro and/or the metal wiring layer on the second layer of the second macro is damaged thereby providing a degraded electromigration (EM) resistance than that of the first macro. 4. The structure of claim 3, wherein the second capping layer of the second macro and/or the metal wiring layer on the second layer of the second macro is damaged to degrade adhesion between the second capping layer of the second macro and the metal wiring layer on the second layer of the second macro. 5. The structure of claim 4, wherein the second capping layer of the second macro and/or the metal wiring layer on the second layer of the second macro is damaged by radiation. 6. The structure of claim 5, wherein the radiation is provided by an e-beam, a ultraviolet light, a visible light, or a laser light.