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A system and a method for measuring temperature within an operating circuit use a Wheatstone bridge within a temperature sensing circuit. One of the resistors in the Wheatstone bridge is a thermally sensitive resistive material layer within the operating circuit. The other three resistors are therma

A system and a method for measuring temperature within an operating circuit use a Wheatstone bridge within a temperature sensing circuit. One of the resistors in the Wheatstone bridge is a thermally sensitive resistive material layer within the operating circuit. The other three resistors are thermally isolated from the operating circuit. Particular configurations of NFET and PFET devices are used to provide enhanced measurement sensitivity within the temperature sensing circuit that includes the Wheatstone bridge.

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1. A temperature sensing circuit for measuring temperature in-situ in an operating circuit comprising: a first resistor connected to a first node and to a second node;a second resistor connected to the second node and to a third node;a third resistor connected to the third node and to a fourth node;

1. A temperature sensing circuit for measuring temperature in-situ in an operating circuit comprising: a first resistor connected to a first node and to a second node;a second resistor connected to the second node and to a third node;a third resistor connected to the third node and to a fourth node; anda fourth resistor connected to the fourth node and to the first node, where: one pair of the first node/third node and second node/fourth node is adapted for receiving an input voltage and the other pair of the first node/third node and second node/fourth node is adapted for providing an output voltage; an NFET whose source/drain regions are coupled to the other pair of the first node/third node and second node/fourth node providing the output voltage; anda fifth resistor coupled to a gate of the NFET, wherein a voltage across the fifth resistor correlates with and amplifies a temperature change in a thermally sensitive resistive material layer, wherein one of the first resistor, second resistor, third resistor and fourth resistor comprises said thermally sensitive resistive material layer within the operating circuit and the other three of the first resistor, the second resistor, the third resistor and the fourth resistor are thermally isolated from the operating circuit. 2. The circuit of claim 1 wherein the other three of the first resistor, the second resistor, the third resistor and the fourth resistor are located over the same substrate as the operating circuit. 3. The circuit of claim 1 wherein the other three of the first resistor, the second resistor and the fourth resistor are not located over the same substrate as the operating circuit. 4. The circuit of claim 1 further comprising an amplifier adapted for receiving the output voltage. 5. The circuit of claim 1, wherein the NFET is an isolated NFET. 6. The circuit of claim 1, wherein: the fourth resistor comprises the metal layer within the operating circuit;the third resistor and the fourth resistor have the same value; andthe second resistor is an adjustable resistor that is used for balancing the circuit. 7. The circuit of claim 6, wherein the first, second and third resistors are maintained at a constant temperature. 8. A method for measuring temperature in an operating circuit comprising: providing a temperature sensing circuit that includes:a first resistor connected to a first node and to a second node;a second resistor connected to the second node and to a third node;a third resistor connected to the third node and to a fourth node;a fourth resistor connected to the fourth node and to the first node;an NFET whose source/drain regions are coupled to the other pair of the first node/third node and second node/fourth node providing the output voltage; anda fifth resistor coupled to a gate of the NFET, wherein a voltage across the fifth resistor correlates with and amplifies a temperature change in a thermally sensitive resistive material layer, wherein one of the pair of the first node/third node and second node/fourth node is adapted for receiving an input voltage and the other of the pair of the first node/third node and second node/fourth node is adapted for providing an output voltage; andone of the first resistor, second resistor, third resistor and fourth resistor comprises the thermally sensitive resistive material layer within the operating circuit and the other three of the first resistor, the second resistor, the third resistor and the fourth resistor are thermally isolated from the operating circuit;applying an input voltage between one pair of the first node/third node and the second node/fourth node with the operating circuit not operating, the input voltage generating a first output voltage at the other pair of the first node/third node and second node/fourth node;applying an input voltage between one pair of the first node/third node and the second node/fourth node with the operating circuit operating, the input voltage generating a second output voltage at the other pair of the first node/third node and second node/fourth node; andcorrelating the first output voltage and the second output voltage to determine a change in temperature of the thermally sensitive resistive material layer within the operating circuit when operating the operating circuit. 9. The method of claim 8 wherein the temperature sensing circuit further comprises an amplifier for receiving the output voltage. 10. The method of claim 8, wherein the NFET is an isolated NFET. 11. The method of claim 8, wherein: the fourth resistor comprises the thermally sensitive resistive material layer within the operating circuit;the third resistor and the fourth resistor have the same value; andthe second resistor is an adjustable resistor for balancing the circuit. 12. The circuit of claim 11, wherein the first, second and third resistors are maintained at a constant temperature. 13. The method of claim 12, wherein the first, second, and third resistors are located over the same substrate as the operating circuit. 14. The method of claim 12 wherein the first, second and third resistors are not located over the same substrate as the operating circuit.