초록 ▼

A method of manufacturing the IC is provided, and more particularly, a method of fabricating a cap for back end of line (BEOL) interconnects that substantially eliminates electro-migration (EM) damage. The method includes forming an interconnect in an insulation material, and selectively depositing

A method of manufacturing the IC is provided, and more particularly, a method of fabricating a cap for back end of line (BEOL) interconnects that substantially eliminates electro-migration (EM) damage. The method includes forming an interconnect in an insulation material, and selectively depositing a metal cap material on the interconnect. The metal cap material includes RuX, where X is at least one of Boron and Phosphorous.

대표청구항 ▼

1. A method of fabricating an interconnect structure comprising: forming an interconnect in an insulation material; andselectively depositing a metal cap material on the interconnect, the metal cap material comprising RuX, where X is at least one of Boron and Phosphorous,wherein the interconnect is

1. A method of fabricating an interconnect structure comprising: forming an interconnect in an insulation material; andselectively depositing a metal cap material on the interconnect, the metal cap material comprising RuX, where X is at least one of Boron and Phosphorous,wherein the interconnect is planarized to be planar with a surface of the insulation material, and the metal cap comprising RuX is directly on the planar surface of the interconnect, andwherein the metal cap comprises a bottom layer of Ru and a top layer of Ru(P), Ru(B) or Ru(P, B). 2. The method of claim 1, wherein the metal cap comprises a mixture of Ru with a component of (P), (B) or (P, B), with the component of (P), (B) or (P, B) gradually increasing in percentage concentration as it is deposited on the interconnect by adjusting a gas flow mixture. 3. The method of claim 2, wherein a bottom portion of the metal cap is about 0% of (P), (B) or (P)(B) and an upper portion is about 30% of (P), (B) or (P)(B), with a gradual increase therebetween. 4. The method of claim 1, wherein the metal cap is formed in a layered structure by applying alternating layers of (i) Ru and Ru(P), (ii) Ru and Ru(B), or (iii) Ru and Ru(P,B). 5. The method of claim 1, further comprising depositing an insulator material over the metal cap. 6. The method of claim 1, wherein the metal cap has a percentage concentration of (X) between about 2% and 30%. 7. The method of claim 1, wherein the metal cap is deposited to a thickness of less than about 50 Å. 8. A method comprising: forming a metal interconnect in a dielectric material and which is formed planar with the dielectric material;selectively forming a metal cap directly on the planar surface of the metal interconnect and not the dielectric material,wherein the metal cap comprises RuX, where X is at least one of Boron and Phosphorous, andwherein the metal cap comprises a bottom layer of Ru and a top layer of Ru(P), Ru(B) or Ru(P,B). 9. The method of claim 8, wherein a percent concentration of the (P), (B) or (P)(B) ranges from about 2% to 30%. 10. The method of claim 8, wherein the metal cap comprises a mixture of Ru with a component of (P), (B) or (P)(B), with the component of (P), (B) or (P)(B) gradually increasing in percentage concentration. 11. The method of claim 10, wherein a bottom portion of the metal cap is about 0% of (P), (B) or (P)(B) and an upper portion is about 30% of (P), (B) or (P)(B), with a gradual increase therebetween. 12. The method of claim 8, wherein a percentage concentration of the (P), (B) or (P)(B) ranges from about 2% to 30%. 13. The method of claim 8, wherein the metal cap is formed as a layered structure alternating between deposited one of (i) Ru and Ru(P), (ii) Ru and Ru(B), or (iii) Ru and Ru(P, B). 14. The method of claim 13, wherein the layered structure has a percentage concentration of (P), (B) or (P)(B) in the range of about 0% to 30%, in relation to the entire layered structure. 15. The method of claim 8, further comprising forming a liner material and then the metal interconnect on the liner material.