Combining X-ray and VUV analysis of thin film layers
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G01N-023/201
출원번호
US-0419497
(2012-03-14)
등록번호
US-8565379
(2013-10-22)
발명자
/ 주소
Mazor, Isaac
Wormington, Matthew
Dag, Ayelet
Khachatryan, Bagrat
출원인 / 주소
Jordan Valley Semiconductors Ltd.
대리인 / 주소
D. Kligler I.P. Services Ltd.
인용정보
피인용 횟수 :
0인용 특허 :
172
초록▼
Apparatus for inspection of a sample includes an X-ray source, which is configured to irradiate a location on the sample with a beam of X-rays. An X-ray detector is configured to receive the X-rays that are scattered from the sample and to output a first signal indicative of the received X-rays. A V
Apparatus for inspection of a sample includes an X-ray source, which is configured to irradiate a location on the sample with a beam of X-rays. An X-ray detector is configured to receive the X-rays that are scattered from the sample and to output a first signal indicative of the received X-rays. A VUV source is configured to irradiate the location on the sample with a beam of VUV radiation. A VUV detector is configured to receive the VUV radiation that is reflected from the sample and to output a second signal indicative of the received VUV radiation. A processor is configured to process the first and second signals in order to measure a property of the sample.
대표청구항▼
1. Apparatus for inspection of a sample, comprising: an X-ray source, which is configured to irradiate a location on the sample, which includes one or more thin film layers, with a beam of X-rays;an X-ray detector, which is configured to receive the X-rays that are scattered from the sample and to o
1. Apparatus for inspection of a sample, comprising: an X-ray source, which is configured to irradiate a location on the sample, which includes one or more thin film layers, with a beam of X-rays;an X-ray detector, which is configured to receive the X-rays that are scattered from the sample and to output a first signal indicative of the received X-rays;a VUV source, which is configured to irradiate the location on the sample with a beam of VUV radiation;a VUV detector, which is configured to receive the VUV radiation that is reflected from the sample and to output a second signal indicative of the received VUV radiation; anda processor, which is configured to process the first signal in order to extract a thickness parameter with respect to one or more of the layers, and to apply the thickness parameter in processing to the second signal in order to derive a characteristic of at least one of the layers. 2. The apparatus according to claim 1, and comprising a sample chamber, which contains at least the sample and is configured to provide controlled atmospheric conditions for measurements made in the sample chamber using both the X-rays and the VUV radiation. 3. The apparatus according to claim 1, and comprising: an X-ray module comprising the X-ray source and X-ray detector;a VUV module comprising the VUV source and VUV detector; andan equipment front-end module, which is configured to transfer samples between the X-ray module and the VUV module in a controlled environment. 4. The apparatus according to claim 1, wherein the characteristic comprises a composition of the at least one of the layers. 5. The apparatus according to claim 1, wherein the processor is configured to process the first signal in order to derive one or more calibration parameters, and to apply the calibration parameters in processing the second signal. 6. The apparatus according to claim 1, wherein the the one or more thin film layers include a periodic structure with an underlying residual layer, and wherein the the thickness parameter comprises a thickness of the residual layer, and wherein the processor is configured to apply the thickness in processing the second signal in order to find a dimension of the periodic structure. 7. A method for inspection of a sample, comprising: irradiating a location on the sample, which includes one or more thin film layers, with a beam of X-rays;generating a first signal responsively to the X-rays that are scattered from the sample;irradiating the location on the sample with a beam of VUV radiation;generating a second signal responsively to the VUV radiation that is reflected from the sample;processing the first signal in order to extract a thickness parameter with respect to one or more of the layers; andapplying the thickness parameter in processing to the second signal in order to derive a characteristic of at least one of the layers. 8. The method according to claim 7, and comprising placing the sample in a sample chamber, which is configured to provide controlled atmospheric conditions for measurements using both the X-rays and the VUV radiation, wherein irradiating the location comprises directing both the beam of the X-rays and the beam of the VUV radiation toward the location while the sample is in the sample chamber. 9. The method according to claim 7, wherein the location on the sample is irradiated with the beam of the X-rays in an X-ray module, and the location on the sample is irradiated with the beam of the VUV radiation in a VUV module, and wherein the method comprises transferring samples between the X-ray module and the VUV module in a controlled environment performing sample handling functions in a controlled environment using an equipment front-end module that is common to the X-ray module and the VUV module. 10. The method according to claim 7, wherein the characteristic comprises a composition of the at least one of the layers. 11. The method according to claim 7, wherein processing the first and second signals comprises processing the first signal in order to derive one or more calibration parameters, and applying the calibration parameters in processing the second signal. 12. The method according to claim 7, wherein the the one or more thin film layers include a periodic structure with an underlying residual layer, and wherein the thickness parameter comprises a thickness of the residual layer, and processing the second signal comprises applying the thickness in order to find a dimension of the periodic structure.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (172)
Bennett Harold E. (Ridgecrest CA), Absolute reflectometer.
Barnes Robert F. ; Carozza Mario ; Eaton David J. ; Paul Gerard T. ; Williams J. Fenton ; Stoltze Mark W. ; Paul Steven L. ; Bajorinas Andrew P., Computer operated spectrometric instrument and associated calculator.
Piwonka-Corle Timothy R. (Portland OR) Scoffone Karen F. (Redwood City CA) Chen Xing (San Jose CA) Lacomb ; Jr. Lloyd J. (Santa Clara CA) Stehle Jean-Louis (Colombes FRX) Zahorski Dorian (Vanves FRX), Focused beam spectroscopic ellipsometry method and system.
Kotidis Petros Amestis ; Cunningham James Frederick ; Gozewski Paul Fred ; Borsody Charles ; Klimek Daniel Edward ; Woodroffe Jaime A., Laser ultrasonics-based material analysis system and method.
McNeil John R. (Albuquerque NM) Naqvi S. Sohail H. (Albuquerque NM) Wilson Scott R. (Albuquerque NM), Lens scatterometer system employing source light beam scanning means.
Powell, Ronald A.; Settles, E. Derryck; Kailasam, Sridhar K., Method and apparatus for in-situ measurement of thickness of copper oxide film using optical reflectivity.
Norton Adam E. (Palo Alto CA) Pham Hung V. (San Jose CA), Method and apparatus for measuring reflectance in two wavelength bands to enable determination of thin film thickness.
Peter A. Rosenthal ; Sylvie Charpenay ; Victor A. Yakovlev, Method and apparatus for measuring the composition and other properties of thin films utilizing infrared radiation.
Guoguang Li ; Hongwei Zhu ; Dale A. Harrison ; Abdul Rahim Forouhi ; Weilu Xu, Method and apparatus for optically determining physical parameters of thin films deposited on a complex substrate.
Li Guoguang ; Zhu Hongwei ; Harrison Dale A. ; Forouhi Abdul Rahim ; Xu Weilu, Method and apparatus for optically determining physical parameters of underlayers.
Jeong Sang Sup,KRX ; Chi Kyeong Koo,KRX ; Jung Chan Ouk,KRX, Method and apparatus for selective spectroscopic analysis of a wafer surface and gas phase elements in a reaction chambe.
Walsh, Phillip, Method and apparatus for using multiple relative reflectance measurements to determine properties of a sample using vacuum ultra violet wavelengths.
Chen Xing (San Jose CA) Flanner ; III Philip D. (Union City CA) Malwankar Kiron B. (Sunnyvale CA) Chen Jennming (Campbell CA), Method and system for calibrating an ellipsometer.
Nikoonahad, Mehrdad; Levy, Ady; Brown, Kyle A.; Bultman, Gary; Wack, Dan; Fielden, John, Methods and systems for determining a critical dimension and a thin film characteristic of a specimen.
Nikoonahad, Mehrdad; Levy, Ady; Brown, Kyle A.; Bultman, Gary; Wack, Dan; Fielden, John, Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen.
Wack, Dan; Levy, Ady; Brown, Kyle A.; Bultman, Gary; Nikoonahad, Mehrdad; Fielden, John, Methods and systems for determining a presence of macro defects and overlay of a specimen.
Wack,Dan; Levy,Ady; Brown,Kyle A.; Bultman,Gary; Nikoonahad,Mehrdad; Fielden,John, Methods and systems for determining an adhesion characteristic and a thickness of a specimen.
Wack, Dan; Levy, Ady; Brown, Kyle A.; Smedt, Rodney C.; Bultman, Gary; Nikoonahad, Mehrdad; Fielden, John, Methods and systems for determining at least one characteristic of defects on at least two sides of a specimen.
Fielden, John; Levy, Ady; Brown, Kyle A.; Bultman, Gary; Nikoonahad, Mehrdad; Wack, Dan, Methods and systems for determining flatness, a presence of defects, and a thin film characteristic of a specimen.
Levy,Ady; Brown,Kyle A.; Nikoonahad,Mehrdad; Bultman,Gary; Wack,Dan; Fielden,John, Methods and systems for determining overlay and flatness of a specimen.
Khalil, Omar S.; Wu, Xiaomao; Kanger, Johannes Sake; Bolt, Rene' Alexander; Yeh, Shu-Jen; Hanna, Charles F.; de Mul, Frits Frans Maria, Non-invasive sensor capable of determining optical parameters in a sample having multiple layers.
Johnson Shane R. (2626 Tennis Crescent Vancouver ; B. C. CAX) Lavoie Christian (2626 Tennis Crescent Vancouver ; B. C. CAX V6T 2E1) Nissen Mark K. (215 - 2190 West 7th Avenue Vancouver ; B. C. CAX V6, Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap.
Greenberg Jeffrey S. (5 Miramar Ave. Santa Barbara CA 93108) Robinson Jay E. (1545 Kendall Dr. Boulder CO 80303) Young James M. (P.O. Box 40449 Santa Barbara CA 93140) Cohen Daniel A. (309-B Consuelo, Optical profiler for films and substrates.
Norton, Adam E.; Sezginer, Abdurrahman; Stanke, Fred E., Polarimetric scatterometry methods for critical dimension measurements of periodic structures.
Thakur Randhir P. S. ; Nuttall Michael ; Rolfson J. Brett ; Burke Robert James, Reflectance method for evaluating the surface characteristics of opaque materials.
McNeil John R. (13423 Desert Hills ; NE. Albuquerque NM 87111) Hickman Kirt C. (12316 Collier Ct. ; NE. Albuquerque NM 87112) Gaspar Susan M. (1920 Vassar Dr. ; NE. ; #32 Albuquerque NM 87106) Naqvi , Simple CD measurement of periodic structures on photomasks.
Woollam,John A.; Green,Steven E.; He,Ping; Johs,Blaine D.; Herzinger,Craig M.; Pfeiffer,Galen L.; Guenther,Brian D.; Liphardt,Martin M., Spectrophotometer, ellipsometer, polarimeter and the like systems.
Wang, Haiming; Maxton, Patrick M.; Johnson, Kenneth C.; Nikoonahad, Mehrdad, System for analyzing surface characteristics with self-calibrating capability.
Nishiyama,Hidetoshi; Noguchi,Minori; Watanabe,Tetsuya; Sekiguchi,Takuaki, System for monitoring foreign particles, process processing apparatus and method of electronic commerce.
Bevis Christopher F. (San Francisco CA) Neukermans Armand P. (Palo Alto CA) Stokowski Stanley E. (Danville CA) Wolf Ralph C. (Palo Alto CA) Lutzker Matthew B. (Atherton CA), Thin film thickness monitor.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.