Silicon carbide matrix composite material, process for producing the same and process for producing part of silicon carbide matrix composite material
IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0753216
(2007-05-24)
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등록번호 |
US-8568650
(2013-10-29)
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우선권정보 |
JP-2002-176680 (2002-06-18); JP-2002-190588 (2002-06-28) |
발명자
/ 주소 |
- Suyama, Shoko
- Kameda, Tsuneji
- Itoh, Yoshiyasu
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출원인 / 주소 |
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대리인 / 주소 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
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인용정보 |
피인용 횟수 :
0 인용 특허 :
7 |
초록
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Silicon carbide matrix composite material (1) comprises silicon carbide matrix (2) as a host The silicon carbide matrix (2) comprises first silicon carbide phase (3) of 0.1 to 10 μm average crystal grain diameter and second silicon carbide phase (4) of 0.01 to 2 μm average crystal grain diameter. In
Silicon carbide matrix composite material (1) comprises silicon carbide matrix (2) as a host The silicon carbide matrix (2) comprises first silicon carbide phase (3) of 0.1 to 10 μm average crystal grain diameter and second silicon carbide phase (4) of 0.01 to 2 μm average crystal grain diameter. In interstices of silicon carbide crystal grains constituting the silicon carbide matrix (2), liberated silicon phase (5) amounting to, for example, 5 to 50 mass % based on the composite material (1) is present continuously in network form. This fine structure enables realizing high strength and high toughness of the silicon carbide composite material (1).
대표청구항
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1. A process for producing a silicon carbide matrix composite material, comprising: preparing a mixed powder of silicon carbide powder having an average grain diameter in a range of 0.1 to 10 μm and carbon powder having an average grain diameter in a range of 0.005 to 1 μm, wherein the silicon carbi
1. A process for producing a silicon carbide matrix composite material, comprising: preparing a mixed powder of silicon carbide powder having an average grain diameter in a range of 0.1 to 10 μm and carbon powder having an average grain diameter in a range of 0.005 to 1 μm, wherein the silicon carbide powder and the carbon powder are mixed at a mass ratio in a range of 10:3 to 10:5;mixing the mixed powder and an organic binder;press forming a mixture of the mixed powder and the organic binder into a compact having a desired shape;dewaxing by heating the compact to remove the organic binder from the compact; andimpregnating molten silicon into the dewaxed compact while heating the dewaxed compact to a maximum temperature in a range of from 1400° C. to less than 1600° C. to produce the silicon carbide matrix composite material comprising a silicon carbide matrix which includes a first silicon carbide phase formed of the silicon carbide powder and a second silicon carbide phase formed by a reaction of the carbon powder and the silicon, and a silicon phase which is continuously present in interstices of silicon carbide crystal grains constituting the silicon carbide matrix,wherein the first silicon carbide phase has silicon carbide crystal grains with an average crystal grain diameter in a range of 0.1 to 10 μm, and the second silicon carbide phase has silicon carbide crystal grains with an average crystal grain diameter in a range of 0.01 to 2 μm; andwherein the silicon phase is present in a range of 5 to 50 mass % in the silicon carbide matrix composite material, and has an average diameter in a range of 0.03 to 3 μm. 2. The process for producing a silicon carbide matrix composite material according to claim 1, wherein the forming process casts slurry containing the mixture under a pressure of 0.5 to 10 MPa. 3. The process for producing a silicon carbide matrix composite material according to claim 1, wherein the forming process press forms the mixture under a pressure of 0.5 to 2 MPa. 4. The process for producing a silicon carbide matrix composite material according to claim 1, wherein the impregnating is under reduced pressure or in an inert atmosphere. 5. The process for producing a silicon carbide matrix composite material according to claim 1, wherein the mixed powder consists of the silicon carbide powder and the carbon powder. 6. The process for producing a silicon carbide matrix composite material according to claim 1, wherein the dewaxing includes heating up to 600° C. 7. The process for producing a silicon carbide matrix composite material according to claim 1, wherein the heating of the dewaxing removes the organic binder from the compact to form a the dewaxed compact. 8. A process for producing a part of a silicon carbide matrix composite material, comprising: preparing a mixed powder of silicon carbide powder having an average grain diameter in a range of 0.1 to 10 μm and carbon powder having an average grain diameter in a range of 0.005 to 1 μm, wherein the silicon carbide powder and the carbon powder are mixed at a mass ratio in a range of 10:3 to 10:5;mixing the mixed powder and an organic binder;forming a mixture of the mixed powder and the organic binder into a compact having a desired shape;dewaxing by heating the compact to remove the organic binder from the compact;impregnating molten silicon into the dewaxed compact while heating the dewaxed compact to a maximum temperature in a range of from 1400° C. to less than 1600° C. to produce a sintered body of the silicon carbide matrix composite material comprising a silicon carbide matrix which includes a first silicon carbide phase formed of the silicon carbide powder and a second silicon carbide phase formed by a reaction of the carbon powder and the silicon, and a silicon phase which is continuously present in interstices of silicon carbide crystal grains constituting the silicon carbide matrix; andfabricating a surface of the sintered body to provide a part having the final size,wherein the first silicon carbide phase has silicon carbide crystal grains with an average crystal grain diameter in a range of 0.1 to 10 μm, and the second silicon carbide phase has silicon carbide crystal grains with an average crystal grain diameter in a range of 0.01 to 2 μm; andwherein the silicon phase is present in a range of 5 to 50 mass % in the sintered body, and has an average diameter in a range of 0.03 to 3μm. 9. The process for producing a part of a silicon carbide matrix composite material according to claim 8, wherein the impregnating is under reduced pressure or in an inert atmosphere. 10. The process for producing a silicon carbide matrix composite material according to claim 8, wherein the mixed powder consists of the silicon carbide powder and the carbon powder. 11. The process for producing a silicon carbide matrix composite material according to claim 8, wherein the dewaxing includes heating up to 600° C. 12. The process for producing a silicon carbide matrix composite material according to claim 8, wherein the heating of the dewaxing removes the organic binder from the compact to form a the dewaxed compact. 13. A process for producing a part of a silicon carbide matrix composite material, comprising: preparing a mixed powder of silicon carbide powder having an average grain diameter in a range of 0.1 to 10 μm and carbon powder having an average grain diameter in a range of 0.005 to 1 μm, wherein the silicon carbide powder and the carbon powder are mixed at a mass ratio in a range of 10:3 to 10:5;mixing the mixed powder and an organic binder;forming a mixture of the mixed powder and the organic binder into a preliminary compact having a size larger than the final size;processing at least a part of the preliminary compact into a compact having a size smaller than that of the preliminary compact but larger than the final size;dewaxing by heating the compact to remove the organic binder from the compact;impregnating molten silicon into the dewaxed compact while heating the dewaxed compact to a maximum temperature in a range of from 1400° C. to less than 1600° C. to produce a sintered body of the silicon carbide matrix composite material comprising a silicon carbide matrix which includes a first silicon carbide phase formed of the silicon carbide powder and a second silicon carbide phase formed by a reaction of the carbon powder and the silicon, and a silicon phase which is continuously present in interstices of silicon carbide crystal grains constituting the silicon carbide matrix; andfabricating a surface of the sintered body to provide a part having the final size,wherein the first silicon carbide phase has silicon carbide crystal grains with an average crystal grain diameter in a range of 0.1 to 10 μm, and the second silicon carbide phase has silicon carbide crystal grains with an average crystal grain diameter in a range of 0.01 to 2μm; andwherein the silicon phase is present in a range of 5 to 50 mass % in the sintered body, and has an average diameter in a range of 0.03 to 3 μm. 14. The process for producing a part of a silicon carbide matrix composite material according to claim 13, wherein the compact is produced to be larger than the final size by a range of 10% or less. 15. The process for producing a part of a silicon carbide matrix composite material according to claim 13, wherein the compact is produced to be larger than the final size by a range of 5% or less when the compact has a size exceeding 200 mm. 16. The process for producing a part of a silicon carbide matrix composite material according to claim 13, wherein the impregnating is under reduced pressure or in an inert atmosphere. 17. The process for producing a silicon carbide matrix composite material according to claim 13, wherein the mixed powder consists of the silicon carbide powder and the carbon powder. 18. The process for producing a silicon carbide matrix composite material according to claim 13, wherein the dewaxing includes heating up to 600° C. 19. The process for producing a silicon carbide matrix composite material according to claim 13, wherein the heating of the dewaxing removes the organic binder from the compact to form a the dewaxed compact.
이 특허에 인용된 특허 (7)
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Brown Wendel G. (Broomfield CO), Method for manufacturing silicon carbide bodies.
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Gupta Ashok K. (Jlich DEX) Gyarmati Ern (Jlich DEX) Mnzer Rudolf (Herzogenrath DEX) Naoumidis Aristides (Jlich DEX), Method of molding bonded parts with silicon carbide surfaces.
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Weaver Gerald Q. (Princeton MA) Olson Bradford A. (Leicester MA), Process for fabricating silicon carbide articles.
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Kojima Shoichi (Tokyo JPX) Minagawa Kazuhiro (Amagasaki JPX) Kano Haruyuki (Ibaraki-ken JPX) Miyazaki Tadaaki (Higashi-Yamato JPX) Wada Hiroaki (Kawasaki JPX), Process for preparing a silicon carbide sintered body for use in semiconductor equipment.
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Kriegsmann Jochen,DEX ; Meistring Rolf,DEX ; Neumann Nicole,DEX ; Nixdorf Reinhard,DEX, Process for producing a body having a porous matrix from at least one recrystallized material.
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Kennedy Peter (Preston GB2), Silicon carbide bodies and their production.
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Odaka, Fumio; Takahashi, Yoshitomo, Silicon carbide sinter and process for producing the same.
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