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Embodiments of the present disclosure provide for methods of selecting a nanostructured deposit for a conductometric gas sensor, methods of detecting a gas based on the acidic or basic characteristic of the gas using a conductometric gas sensor, devices including conductometric gas sensors, arrays o

Embodiments of the present disclosure provide for methods of selecting a nanostructured deposit for a conductometric gas sensor, methods of detecting a gas based on the acidic or basic characteristic of the gas using a conductometric gas sensor, devices including conductometric gas sensors, arrays of conductometric gas sensors, methods of determining the acidic or basic characteristic of a gas, methods of treating a sensor, and the like.

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1. A method of selecting a nanostructured deposit for a conductometric porous silicon gas sensor, comprising: exposing a gas to a plurality of testing conductometric porous silicon gas sensors, wherein each of the testing conductometric porous silicon gas sensors is operative to transduce the presen

1. A method of selecting a nanostructured deposit for a conductometric porous silicon gas sensor, comprising: exposing a gas to a plurality of testing conductometric porous silicon gas sensors, wherein each of the testing conductometric porous silicon gas sensors is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration,wherein the testing conductometric porous silicon gas sensor has a porous silicon layer, wherein one or more of the testing conductometric porous silicon gas sensors has a nanostructured deposit disposed on the porous silicon layer, wherein the nanostructured deposit is selected from the group consisting of: a nanostructured deposit having the characteristic of a hard acid, a nanostructured deposit having the characteristic of an intermediate acid, a nanostructured deposit having the characteristic of a soft acid, a nanostructured deposit having the characteristic of a hard base, a nanostructured deposit having the characteristic of an intermediate base, and a nanostructured deposit having the characteristic of a soft base,measuring an impedance change using each of the testing conductometric porous silicon gas sensors relative to a standard testing conductometric porous silicon gas sensor, andselecting the nanostructured deposit using the concept that the nanostructured deposit and the gas have complementary characteristics based on the interactions of two of the following: a hard acid, an intermediate acid, a soft acid, a hard base, an intermediate base, and a soft base, where such interaction between the gas and the nanostructured deposit determines the measured impedance change, wherein the combination of the nanostructured deposit and the gas generates a range of impedance changes, the greatest impedance change being determined by the maximum hard acid/soft base or hard base/soft acid mismatch between the gas and the nanostructured deposit. 2. The method of claim 1, wherein if the gas has the characteristic of a hard acid, a nanostructured deposit having the characteristic of a soft base is selected to maximize the impedance change. 3. The method of claim 1, wherein if the gas has the characteristic of a hard base, a nanostructured deposit having the characteristic of a soft acid is selected to maximize the impedance change. 4. The method of claim 1, wherein if the gas has the characteristic of a hard acid, a nanostructured deposit that does not have the characteristic of a hard base is selected, wherein if the gas has the characteristic of an intermediate acid, a nanostructured deposit that does not have the characteristic of an intermediate base is selected, wherein if the gas has the characteristic of a soft acid, a nanostructured deposit that does not have the characteristic of a soft base is selected, wherein if the gas has the characteristic of a hard base, a nanostructured deposit that does not have the characteristic of a hard acid is selected, wherein if the gas has the characteristic of an intermediate base, a nanostructured deposit that does not have the characteristic of an intermediate acid is selected, wherein if the gas has the characteristic of a soft base, a nanostructured deposit that does not have the characteristic of a soft acid is selected. 5. The method of claim 1, wherein exposing includes exposing the gas to two conductometric porous silicon gas sensors, wherein one of the conductometric porous silicon gas sensors has a nanostructured deposit having the characteristic of a hard acid and the other of the conductometric porous silicon gas sensors has a nanostructured deposit having a characteristic of a soft acid, the combination creating a range of impedance changes when interacting with a gas that is a base. 6. The method of claim 1, wherein exposing includes exposing the gas to two conductometric porous silicon gas sensors, wherein one of the conductometric porous silicon gas sensors has a nanostructured deposit having the characteristic of a hard base and the other of the conductometric porous silicon gas sensors has a nanostructured deposit having a characteristic of a soft base, the combination creating a range of impedance changes when interacting with a gas that is an acid. 7. The method of claim 1, wherein exposing includes exposing the gas to three conductometric porous silicon gas sensors, wherein one of the conductometric porous silicon gas sensors has a nanostructured deposit having the characteristic of a hard acid, one of the other of the conductometric porous silicon gas sensors has a nanostructured deposit having a characteristic of a soft acid, and the other of the conductometric porous silicon gas sensors has a nanostructured deposit having a characteristic of an intermediate acid, the combination creating a range of impedance changes when interacting with a gas that is a base. 8. The method of claim 1, wherein exposing includes exposing the gas to four or more conductometric porous silicon gas sensors, wherein the nanostructured deposit for each of the conductometric porous silicon gas sensors is selected from the group consisting of: a nanostructured deposit having the characteristic of a hard acid, a nanostructured deposit having the characteristic of a intermediate acid, a nanostructured deposit having the characteristic of a soft acid. 9. The method of claim 1, wherein exposing includes exposing the gas to an array of conductometric porous silicon gas sensors, wherein the nanostructured deposit for each of the conductometric porous silicon gas sensors is selected from the group consisting of: a nanostructured deposit having the characteristic of a hard acid, a nanostructured deposit having the characteristic of a intermediate acid, a nanostructured deposit having the characteristic of a soft acid. 10. The method of claim 1, wherein exposing includes exposing the gas to four or more conductometric porous silicon gas sensors, wherein the nanostructured deposit for each of the conductometric porous silicon gas sensors is selected from the group consisting of: a nanostructured deposit having the characteristic of a hard base, a nanostructured deposit having the characteristic of a intermediate base, a nanostructured deposit having the characteristic of a soft base. 11. The method of claim 1, wherein exposing includes exposing the gas to an array of conductometric porous silicon gas sensors, wherein the nanostructured deposit for each of the conductometric porous silicon gas sensors is selected from the group consisting of: a nanostructured deposit having the characteristic of a hard base, a nanostructured deposit having the characteristic of a intermediate base, a nanostructured deposit having the characteristic of a soft base. 12. The method of claim 1, wherein exposing includes exposing the gas to three conductometric porous silicon gas sensors, wherein one of the conductometric porous silicon gas sensors has a nanostructured deposit having the characteristic of a hard base, one of the other of the conductometric porous silicon gas sensors has a nanostructured deposit having a characteristic of a soft base, and the other of the conductometric porous silicon gas sensors has a nanostructured deposit having a characteristic of an intermediate base, the combination creating a range of impedance changes when interacting with a gas that is an acid. 13. The method of claim 1, wherein the the nanostructured deposit provides a fractional coverage of the porous silicon layer. 14. A method of detecting a gas based on the acidic or basic characteristic of the gas using a conductometric porous silicon gas sensor, comprising: exposing a gas to one or more conductometric porous silicon gas sensors, wherein each of the conductometric porous silicon gas sensors is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration,wherein the conductometric porous silicon gas sensor has a porous silicon layer, wherein one or more of the conductometric porous silicon gas sensors has a nanostructured deposit disposed on the porous silicon layer, wherein the nanostructured deposit is selected from the group consisting of: a nanostructured deposit having the characteristic of a hard acid, a nanostructured deposit having the characteristic of an intermediate acid, a nanostructured deposit having the characteristic of a soft acid, a nanostructured deposit having the characteristic of a hard base, a nanostructured deposit having the characteristic of an intermediate base, and a nanostructured deposit having the characteristic of a soft base, wherein the nanostructured deposit used is based on the concept that the nanostructured deposit and the gas have complementary characteristics based on the interactions of two of the following: a hard acid, an intermediate acid, a soft acid, a hard base, an intermediate base, and a soft base, where such interaction between the gas and the nanostructured deposit determines the measured impedance change, wherein the greatest impedance change is obtained by using a nanostructured deposit and the gas promoting an interaction that generates the maximum acid-base mismatch;measuring the impedance change using one or more of the conductometric porous silicon gas sensors relative to a standard conductometric porous silicon gas sensor; andobtaining the greatest impedance change using the conductometric porous silicon gas sensor that has the nanoparticle deposit that interact with the gas to produce the maximum acid-base mismatch. 15. The method of claim 14, wherein the gas has the characteristic of a hard acid and the nanostructured deposit has the characteristic of a soft base for maximum impedance response. 16. The method of claim 14, wherein the gas has the characteristic of a hard base and the nanostructured deposit has the characteristic of a soft acid for maximum impedance response. 17. The method of claim 14, wherein the the nanostructured deposit provides a fractional coverage of the porous silicon layer. 18. A device, comprising: a conductometric porous silicon gas sensor including a silicon substrate having a porous silicon layer, wherein a nanostructured deposit is disposed on a portion of the porous silicon layer,wherein the conductometric porous silicon gas sensor is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration,wherein if the gas of interest has the characteristic of a hard base, the nanostructured deposit does not have the characteristics of a hard acid, wherein if the gas of interest has the characteristic of a soft base, the nanostructured deposit does not have the characteristics of a soft acid, wherein if the gas of interest has the characteristic of an intermediate base, the nanostructured deposit does not have the characteristic of an intermediate acid, wherein if the gas of interest has the characteristic of a hard acid, the nanostructured deposit does not have the characteristics of a hard base, wherein if the gas of interest has the characteristic of a soft acid, the nanostructured deposit does not have the characteristic of a soft base, wherein if the gas of interest has the characteristic of an intermediate acid, the nanostructured deposit does not have the characteristic of an intermediate base. 19. The device of claim 18, wherein the gas has the characteristic of a hard acid and the nanostructured deposit has the characteristic of a soft base to produce a maximum impedance change. 20. The device of claim 18, wherein the gas has the characteristic of a hard base and the nanostructured deposit has the characteristic of a soft acid to produce a maximum impedance change. 21. The device of claim 18, wherein the the nanostructured deposit provides a fractional coverage of the porous silicon layer. 22. A method of determining the acidic or basic characteristic of a gas, comprising: exposing a gas to a plurality of conductometric porous silicon gas sensors, wherein each of the conductometric porous silicon gas sensors is operative to transduce the presence of a gas into an impedance change, wherein the impedance change correlates to the gas concentration,wherein the conductometric porous silicon gas sensor has a porous silicon layer, wherein one or more of the conductometric porous silicon gas sensors has a nanostructured deposit disposed on the porous silicon layer, wherein the nanostructured deposit is selected from the group consisting of: a nanostructured deposit having the characteristic of a hard acid, a nanostructured deposit having the characteristic of an intermediate acid, a nanostructured deposit having the characteristic of a soft acid, a nanostructured deposit having the characteristic of a hard base, a nanostructured deposit having the characteristic of an intermediate base, and a nanostructured deposit having the characteristic of a soft base, wherein the nanostructured deposit used is based on the concept that the nanostructured deposit and the gas have complementary characteristics based on the interactions of two of the following: a hard acid, an intermediate acid, a soft acid, a hard base, an intermediate base, and a soft base, where such interaction between the gas and the nanostructured deposit determines the measured impedance change,measuring an impedance change using each of the conductometric porous silicon gas sensors relative to a standard conductometric porous silicon gas sensor, anddetermining if the gas has the characteristic of a hard acid, an intermediate acid, a soft acid, a hard base, an intermediate base, or a soft base, based on the impedance change of the conductometric porous silicon gas sensors. 23. The method of claim 22, wherein a) if one of the conductometric porous silicon gas sensors has a nanostructured deposit having the characteristic of a hard acid and b) wherein if one of the conductometric porous silicon gas sensors has a nanostructured deposit having the characteristic of a soft acid, and the impedance change is greater for a) then the interacting gas is not a hard base. 24. The method of claim 22, wherein a) if one of the conductometric porous silicon gas sensors has a nanostructured deposit having the characteristic of a hard acid and b) wherein if one of the conductometric porous silicon gas sensors has a nanostructured deposit having the characteristic of a soft acid, and the impedance change is greater for b) then the interacting gas is not a soft base. 25. The device of claim 22, wherein the the nanostructured deposit provides a fractional coverage of the porous silicon layer.