IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0583500
(2009-08-21)
|
등록번호 |
US-8575003
(2013-11-05)
|
우선권정보 |
DE-102 03 795 (2002-01-31); DE-102 43 757 (2002-09-20) |
발명자
/ 주소 |
- Fehrer, Michael
- Hahn, Berthold
- Härle, Volker
- Kaiser, Stephan
- Otte, Frank
- Plössl, Andreas
|
출원인 / 주소 |
- OSRAM Opto Semiconductors GmbH
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
0 인용 특허 :
31 |
초록
▼
Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semicon
Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.
대표청구항
▼
1. A method for producing an optoelectronic component, comprising: separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile;wherein a plurality of individual regions of the semicondu
1. A method for producing an optoelectronic component, comprising: separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile;wherein a plurality of individual regions of the semiconductor layer are irradiated successively such that each region of the plurality of individual regions of the semiconductor layer is radiated in a single radiation step and said plurality of individual regions are arranged in a matrix,wherein the individual regions have approximately a rectangular shape and the laser beam profile has a substantially plateau-shaped central region corresponding to a dimension of the rectangular shape of the individual regions. 2. The method as claimed in claim 1, wherein the laser beam is generated by an excimer laser. 3. The method as claimed in claim 2, wherein the excimer laser comprises a noble gas-halogen compound as laser-active medium. 4. The method as claimed in claim 1, wherein the laser beam has a rectangular or trapezoidal spatial beam profile. 5. The method as claimed in claim 1, wherein the laser beam is generated by a laser in pulsed operation. 6. The method as claimed in claim 1, wherein the wavelength of the laser beam is between 200 nm and 400 nm. 7. The method as claimed in claim 1, wherein the laser beam is focused onto the semiconductor layer in such a way that, within the irradiated region, the energy density generated by the laser beam is between 100 mJ/cm2 and 1000 mJ/cm2. 8. The method as claimed in claim 1, wherein the individual regions are arranged in area-filling fashion such that a spatially approximately constant intensity distribution results, in a manner integrated with respect to time, for a predominant part of the irradiated semiconductor layer. 9. The method as claimed in claim 1, wherein the laser beam has, at the location of the semiconductor layer, a beam area with a longitudinal dimension (a) and a transverse dimension (b), the longitudinal dimension (a) is greater than the transverse dimension (b), and the semiconductor layer is moved relative to the laser beam during the irradiation along the direction of the transverse dimension (b). 10. The method as claimed in claim 1, wherein the substrate is at least partly transmissive to the laser beam and the semiconductor layer is irradiated through the substrate. 11. The method as claimed in claim 1, wherein, prior to separation from the substrate, the semiconductor layer is applied onto a carrier on a side remote from the substrate. 12. The method as claimed in claim 11, wherein the thermal expansion coefficient of the carrier aHL is chosen in a manner coordinated with at least one of the beam profile and the pulse length of the laser beam pulses and with the thermal expansion coefficient of the semiconductor layer aHL and the thermal expansion coefficient aHL of the substrate, in order to reduce strains between the substrate, the semiconductor layer, and the carrier during production. 13. The method as claimed in claim 12, wherein the thermal expansion coefficient of the carrier aHL is chosen to be nearer to the thermal expansion coefficient of the semiconductor layer aHL than to the thermal expansion coefficient as of the substrate. 14. The method as claimed in claim 11, wherein the thermal expansion coefficient of the carrier aHL differs from the thermal expansion coefficient aHL of the substrate by 45% or less. 15. The method as claimed in claim 11, wherein the thermal expansion coefficient of the carrier differs from the thermal expansion coefficient aHL of the semiconductor layer by 35% or less. 16. The method as claimed in claim 11, wherein the carrier has a thermal expansion coefficient of approximately 4.3*10−6K−1 and approximately 5.9*10−6K−1. 17. The method as claimed in claim 11, wherein the carrier comprises at least one of gallium arsenide, silicon, copper, iron, nickel, cobalt, molybdenum, tungsten, and germanium. 18. The method as claimed in claim 11, wherein a large pulse length of the laser beam pulses is chosen for the separation of the semiconductor layer from the substrate. 19. The method as claimed in claim 11, wherein the thermal expansion coefficient of the carrier aHL differs from the thermal expansion coefficient aHL of the semiconductor layer by 35% or more, and in which a small pulse length of the laser beam pulses is chosen for the separation of the semiconductor layer from the substrate. 20. The method as claimed in claim 11, wherein the semiconductor layer is soldered onto the carrier by means of a solder comprising at least one of gold, tin, palladium and indium. 21. The method as claimed in claim 1, wherein, before the semiconductor layer is connected to the carrier, a metallization is applied to the side of the semiconductor layer which is remote from the substrate. 22. The method as claimed in claim 21, wherein the metallization comprises at least one of gold and platinum. 23. The method as claimed in claim 1, wherein the semiconductor layer comprises a plurality of individual layers. 24. The method as claimed in claim 1, wherein the III-V compound semiconductor material is a nitride compound semiconductor material. 25. The method as claimed in claim 24, wherein the semiconductor layer or at least one of the individual layers comprises InxAlyGa1-x-yN where 0≦x≦1, 0≦y≦1 and x+y ≦1. 26. The method as claimed in claim 1, wherein the substrate comprises at least one of silicon, silicon carbide, aluminium oxide, sapphire. 27. The method as claimed in claim 1, wherein the semiconductor layer is epitaxially grown on the substrate. 28. The method as claimed in claim 1, wherein the semiconductor layer has a thickness which is less than or equal to 50 μm. 29. The method as claimed in claim 1, wherein the semiconductor component is a light emitting diode. 30. The method as claimed in claim 1, wherein an interface region between semiconductor layer and substrate is irradiated in such a way that the radiation energy is absorbed at said interface region, said absorption of radiation energy leading to a material decomposition within the semiconductor layer. 31. The method as claimed in claim 3, wherein the noble gas-halogen compound is XeF, XeBr, XeCl, KrCl, or KrF. 32. The method as claimed in claim 1, wherein the laser beam is focused onto the semiconductor layer in such a way that, within the irradiated region, the energy density generated by the laser beam is between 150 mJ/cm2 and 800 mJ/cm2. 33. The method as claimed in claim 11, wherein the thermal expansion coefficient of the carrier aHL differs from the thermal expansion coefficient aHL of the substrate by 40% or less. 34. The method as claimed in claim 11, wherein the thermal expansion coefficient of the carrier aHL differs from the thermal expansion coefficient aHL of the semiconductor layer by 25% or less. 35. The method as claimed in claim 11, wherein the carrier has a thermal expansion coefficient of approximately 4.6×10−6K−1 and approximately 5.3*10−6K−1. 36. The method as claimed in claim 25, wherein the semiconductor layer or at least one of the individual layers comprises GaN, AlGaN, InGaN, AlInGaN, AlN or InN. 37. The method as claimed in claim 11, wherein, prior to separation from the substrate, the semiconductor layer is soldered onto a carrier on a side remote from the substrate. 38. The method as claimed in claim 11, wherein a pulse length of greater than 15 ns of the laser beam pulses is chosen for the separation of the semiconductor layer from the substrate. 39. The method as claimed in claim 11, wherein the thermal expansion coefficient of the carrier aHL differs from the thermal expansion coefficient aHL of the semiconductor layer by 35% or more, and in which a pulse length of less than approximately 15 ns of the laser beam pulses is chosen for the separation of the semiconductor layer from the substrate. 40. The method as claimed in claim 1, wherein the central region of the laser beam profile is adjoined by flank regions having a lower intensity than the central region, and the plurality of individual regions overlap slightly in edge regions corresponding to the flank regions. 41. The method as claimed in claim 1, wherein rows of the matrix of said plurality of individual regions are offset with respect to each other. 42. The method as claimed in claim 1, wherein each single radiation step corresponds to a single laser pulse. 43. A method for producing an optoelectronic component, comprising: separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile;wherein a plurality of individual regions of the semiconductor layer are irradiated successively such that each region of the plurality of individual regions of the semiconductor layer is radiated in a single radiation step and said plurality of individual regions are arranged in a matrix,wherein rows of the matrix of said plurality of individual regions are offset with respect to each other.
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