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A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer a

A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.

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1. A method for processing a microelectronic topography, comprising: forming a first metal layer upon the microelectronic topography;hydrating at least a portion of the first metal layer to form a hydrated metal oxide layer;depositing a second metal layer upon the hydrated metal oxide layer; anddehy

1. A method for processing a microelectronic topography, comprising: forming a first metal layer upon the microelectronic topography;hydrating at least a portion of the first metal layer to form a hydrated metal oxide layer;depositing a second metal layer upon the hydrated metal oxide layer; anddehydrating the hydrated metal oxide layer subsequent to the step of depositing the second metal layer. 2. The method of claim 1, wherein the step of hydrating at least a portion of the first metal layer comprises exposing the first metal layer to an oxidizing plasma. 3. The method of claim 1, wherein the step of hydrating at least a portion of the first metal layer comprises exposing the first metal layer to an oxidizing fluid. 4. The method of claim 1, wherein the step of hydrating at least a portion of the first metal layer comprises exposing the first metal layer to irradiating photons. 5. The method of claim 1, wherein the first metal layer comprises tantalum and the hydrated metal oxide layer comprises tantalic acid. 6. The method of claim 5, wherein the step of dehydrating the hydrated metal oxide layer forms tantalum pentoxide beneath the second metal layer. 7. The method of claim 1, wherein the step of forming the first metal layer comprises forming a metal layer selected from a group consisting of tantalum, tantalum nitride, tantalum silicon nitride, tantalum carbon nitride, titanium, titanium nitride, titanium silicon nitride, tungsten and tungsten nitride. 8. The method of claim 1, wherein the step of dehydrating the hydrated metal oxide layer comprises heating the microelectronic topography to a temperature greater than approximately 400° C. 9. The method of claim 1, wherein the step of forming the first metal layer comprises conformably depositing the first metal layer within a trench of the microelectronic topography. 10. The method of claim 1, wherein the step of forming the first metal layer comprises depositing a metal layer substantially absent of boron and phosphorus. 11. The method of claim 1, wherein the step of forming the first metal layer comprises depositing a metal layer comprising cobalt and/or nickel. 12. The method of claim 1, wherein the step of hydrating at least a portion of the first metal layer consumes less than all of the first metal layer prior to the step of depositing the second metal layer upon the hydrated metal oxide layer. 13. The method of claim 1, wherein the step of hydrating at least a portion of the first metal layer consumes all of the first metal layer. 14. The method of claim 1, wherein the step of hydrating at least a portion of the first metal layer limits the hydrated metal oxide layer to a thickness between approximately 5 angstroms and approximately 50 angstroms. 15. The method of claim 1, wherein the step of depositing the second metal layer upon the hydrated metal oxide layer comprises electrolessly plating the second metal layer upon the hydrated metal oxide layer. 16. The method of claim 15, further comprising forming an activation seed layer upon the hydrated metal oxide layer prior to electrolessly plating the second metal layer upon the hydrated metal oxide layer.