초록

A semiconductor device may have a thickness, such that the semiconductor devices are not flexible, and may be bonded and electrically coupled on a flexible substrate. After this bonding, the semiconductor device may be thinned so as to be rendered flexible.

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1. A method for making a flexible electronic device comprising: forming at least one flexible substrate electrical connection on a flexible substrate;forming at least one semiconductor device comprising a substrate region, and an active region, the active region comprising at least one semiconductor

1. A method for making a flexible electronic device comprising: forming at least one flexible substrate electrical connection on a flexible substrate;forming at least one semiconductor device comprising a substrate region, and an active region, the active region comprising at least one semiconductor device electrical connection, the at least one semiconductor device having a thickness so that the at least one semiconductor device is not flexible;bonding the at least one semiconductor device onto the flexible substrate so that the at least one flexible substrate electrical connection is coupled with the at least one semiconductor device electrical connection; andthinning, after the bonding, the substrate region of the at least one semiconductor device to make the at least one semiconductor device flexible. 2. The method according to claim 1 further comprising keeping the flexible substrate stiff during the bonding and the thinning. 3. The method according to claim 1 wherein the flexible substrate is provided on a carrier substrate so as to be kept stiff. 4. The method according to claim 1 wherein the thickness of the at least one semiconductor device prior to the thinning is at least 100 micrometers, and after the thinning is 50 micrometers or less. 5. The method according to claim 1 wherein forming of the at least one semiconductor device comprises: forming a plurality of semiconductor devices on a semiconductor wafer; anddicing the semiconductor wafer to provide a plurality of die, each die providing a corresponding semiconductor device. 6. The method according to claim 1 wherein forming of the flexible substrate comprises forming a plurality of connecting bumps on the flexible substrate to define a plurality of flexible substrate electrical connections. 7. The method according to claim 1 wherein forming of the at least one semiconductor device comprises forming a plurality of connecting bumps on the at least one semiconductor device to define a plurality of semiconductor device electrical connections. 8. The method according to claim 1 wherein the substrate region of the at least one semiconductor device comprises a sacrificial layer; and wherein thinning comprises etching the sacrificial layer so as to fracture the substrate region. 9. The method according to claim 1 wherein thinning comprises at least one of wet chemical etching and spin etching of the substrate region. 10. The method according to claim 1 wherein thinning comprises making porous at least a portion of the substrate region. 11. The method according to claim 1 wherein thinning comprises protecting the active region during the thinning. 12. The method according to claim 1 wherein the at least one semiconductor device comprises a silicon on insulator (SOI) device. 13. The method according to claim 1 wherein the at least one semiconductor device comprises an integrated circuit. 14. The method according to claim 1 wherein the flexible substrate comprises at least one of polyimide, flexible steel, polyether ether ketone, polyethylene naphthalate, and polyethylene terephthalate. 15. The method according to claim 2 further comprising using a system of rollers to keep the flexible substrate stiff. 16. The method according to claim 3 further comprising removing the carrier substrate after the thinning. 17. The method according to claim 11 wherein protecting of the active region during the thinning comprises: forming a protective layer after the bonding, the protective layer encapsulating the at least one semiconductor device; andexposing a bottom of the at least one semiconductor device via a plurality of openings through the protective layer. 18. The method according to claim 11 wherein protecting of the active region during the thinning comprises: providing a container for a etch bath, the container comprising at least one opening at a bottom thereof; andplacing the container adjacent the at least one semiconductor device so that an upper surface of the substrate region of the at least one semiconductor device closes the at least one opening so as to prevent a vapor from the etch bath from reaching the active region of the at least one semiconductor device. 19. The method according to claim 12 wherein thinning comprises etching an insulator layer of the SOI device. 20. A method for making a flexible electronic device comprising: forming at least one flexible substrate electrical connection on a flexible substrate;forming at least one semiconductor device comprising a substrate region including a sacrificial layer, and an active region, the active region comprising at least one semiconductor device electrical connection, the at least one semiconductor device having a thickness so that the at least one semiconductor device is not flexible;bonding the at least one semiconductor device onto the flexible substrate so that the at least one flexible substrate electrical connection is coupled with the at least one semiconductor device electrical connection;thinning, after the bonding, the substrate region of the at least one semiconductor device by etching the sacrificial layer so as to fracture the substrate region and to make the at least one semiconductor device flexible; andkeeping the flexible substrate stiff during the bonding and the thinning. 21. The method according to claim 20 wherein the flexible substrate is provided on a carrier substrate so as to be kept stiff. 22. The method according to claim 20 wherein the thickness of the at least one semiconductor device prior to the thinning is at least 100 micrometers, and after the thinning is 50 micrometers or less. 23. The method according to claim 21 wherein forming of the at least one semiconductor device comprises: forming a plurality of semiconductor devices on a semiconductor wafer; anddicing the semiconductor wafer to provide a plurality of die, each die providing a corresponding semiconductor device. 24. The method according to claim 20 wherein forming of the flexible substrate comprises forming a plurality of connecting bumps on the flexible substrate to define a plurality of flexible substrate electrical connections. 25. The method according to claim 21 further comprising removing the carrier substrate after the thinning. 26. The method according to claim 21 further comprising using a system of rollers to keep the flexible substrate stiff.