Exhaust gas treatment system
IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0610131
(2012-09-11)
|
등록번호 |
US-8591633
(2013-11-26)
|
우선권정보 |
JP-2010-055396 (2010-03-12); JP-2010-055397 (2010-03-12); JP-2010-055398 (2010-03-12) |
발명자
/ 주소 |
- Ohuchi, Tai
- Okabe, Takashi
- Asano, Tsuyoshi
|
출원인 / 주소 |
- JX Nippon Oil & Energy Corporation
|
대리인 / 주소 |
Buchanan Ingersoll & Rooney PC
|
인용정보 |
피인용 횟수 :
0 인용 특허 :
6 |
초록
▼
An exhaust gas treatment system treats a mixed gas containing at least hydrogen and monosilane discharged from a semiconductor fabrication equipment. The exhaust gas treatment system includes a pump unit which emits the mixed gas discharged from the semiconductor fabrication equipment, a compressor
An exhaust gas treatment system treats a mixed gas containing at least hydrogen and monosilane discharged from a semiconductor fabrication equipment. The exhaust gas treatment system includes a pump unit which emits the mixed gas discharged from the semiconductor fabrication equipment, a compressor which compresses the mixed gas emitted by the pump unit and sends the mixed gas to a rear stage, a gas accommodation unit which collects and accommodates the compressed mixed gas, a flow rate control unit which controls a flow rate of the mixed gas supplied from the gas accommodation unit, and a membrane separation unit which causes the hydrogen to selectively permeate therethrough and separates the monosilane and the hydrogen from the mixed gas. Accordingly, the exhaust gas treatment system may be stably operated in a state where a change in pressure of the mixed gas discharged from the semiconductor fabrication equipment is alleviated.
대표청구항
▼
1. An exhaust gas treatment system which treats a mixed gas containing at least hydrogen and monosilane discharged from a semiconductor fabrication equipment, the exhaust gas treatment system comprising: a membrane separation unit which causes the hydrogen to selectively permeate therethrough and se
1. An exhaust gas treatment system which treats a mixed gas containing at least hydrogen and monosilane discharged from a semiconductor fabrication equipment, the exhaust gas treatment system comprising: a membrane separation unit which causes the hydrogen to selectively permeate therethrough and separates the monosilane and the hydrogen from the mixed gas;a hydrogen recovery rate acquisition unit which acquires information on a recovery rate of the hydrogen separated by the membrane separation unit and calculates the recovery rate of the hydrogen; anda pressure control unit which controls a permeation side pressure of the membrane separation unit in response to a change in hydrogen recovery rate. 2. The exhaust gas treatment system according to claim 1, wherein the pressure control unit changes the permeation side pressure based on the following equation: ΔP=C1×ΔA, C1≧0.5wherein ΔA indicates a decrease rate (%) of the hydrogen recovery rate, and ΔP indicates a reduction amount (kPa) of the permeation side pressure. 3. An exhaust gas treatment system which treats a mixed gas containing at least hydrogen and monosilane discharged from a semiconductor fabrication equipment, the exhaust gas treatment system comprising: a membrane separation unit which causes the hydrogen to selectively permeate therethrough and separates the monosilane and the hydrogen from the mixed gas;a hydrogen recovery rate acquisition unit which acquires information on a recovery rate of the hydrogen separated by the membrane separation unit and calculates the recovery rate of the hydrogen; anda temperature control unit which controls a temperature of the mixed gas flowing into the membrane separation unit in response to a change in hydrogen recovery rate. 4. The exhaust gas treatment system according to claim 3, wherein the temperature control unit changes the temperature of the mixed gas flowing into the membrane separation unit based on the following equation: ΔT=C2×ΔA, C2≧0.5wherein ΔA indicates a decrease rate (%) of the hydrogen recovery rate, and ΔT indicates a temperature increase amount (° C.) of the mixed gas. 5. The exhaust gas treatment system according to claim 1, wherein the hydrogen recovery rate acquisition unit includes a mixed gas analysis unit which measures a flow rate of the mixed gas flowing and a concentration of the hydrogen and the monosilane into the membrane separation unit, anda permeation side gas analysis unit which measures a flow rate of a gas and a concentration of the hydrogen and the monosilane, the gas comprising the hydrogen, and the monosilane being separated while permeating the membrane separation unit. 6. The exhaust gas treatment system according to claim 1, wherein the hydrogen recovery rate acquisition unit includes a flow rate control unit which controls a flow rate of the mixed gas flowing into the membrane separation unit;a mixed gas analysis unit which measures a concentration of the hydrogen and the monosilane in the mixed gas of which the flow rate is controlled; anda permeation side gas analysis unit which measures a flow rate of a gas and a concentration of the hydrogen and the monosilane, the gas comprising the hydrogen, and the monosilane being separated while permeating the membrane separation unit. 7. An exhaust gas treatment system which separates respective gases, by membrane separation, from a mixed gas containing at least hydrogen and monosilane discharged from a semiconductor fabrication equipment, the exhaust gas treatment system comprising: a gas addition unit which adds a third element gas to the mixed gas discharged from the semiconductor fabrication equipment;a membrane separation device which includes a semipermeable membrane causing the hydrogen to selectively permeate therethrough and separates the monosilane and the hydrogen from the mixed gas having the third element gas added thereto; anda hydrogen recovery rate acquisition unit which acquires a recovery rate of the hydrogen separated by the membrane separation device, whereinthe gas addition unit changes an addition amount of the third element gas according to the following equation: ΔF=C1×ΔA, C1≧0.3wherein ΔA indicates a decrease rate (%) of the hydrogen recovery rate, and ΔF indicates a decrease amount (L/min) of the addition amount of the third element gas. 8. The exhaust gas treatment system according to claim 7, further comprising: a pressure control unit which controls a permeation side pressure of the membrane separation device, whereinthe pressure control unit changes the permeation side pressure of the membrane separation device according to the following equation: ΔP=C2×ΔA, C2≧0.5wherein ΔA indicates a decrease rate (%) of the hydrogen recovery rate, and ΔP indicates a decrease amount (kPa) of the permeation side pressure of the membrane separation device. 9. The exhaust gas treatment system according to claim 7, further comprising: a temperature control unit which controls a temperature of the mixed gas, whereinthe temperature control unit changes the temperature of the mixed gas according to the following equation: ΔT=C3×ΔA, C3≧0.8wherein ΔA indicates a decrease rate (%) of the hydrogen recovery rate, and ΔT indicates an increase amount (° C.) of the temperature of the mixed gas.
이 특허에 인용된 특허 (6)
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Mitariten Michael J. (Peekskill NY), Control process and apparatus for membrane separation systems.
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Hsieh Shan-Tao (Charleston WV) Keller ; II George E. (South Charleston WV), Gas separation by semi-permeable membranes.
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Erickson, Albert William; Paczewski, Richard Mark, Hydrogen purification apparatus.
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Booth ; III Ronald Earl, Method for capturing nitrogen from air using gas separation membrane.
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Behling Rolf-Dieter,DEX ; Peinemann Klaus-Viktor,DEX ; Ohlrogge Klaus,DEX ; Wind Jan,DEX ; da Silva Lidia Barreto,BRX, Multi-stage process for the separation/recovery of gases.
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Campbell Michael J. (Clarence Center NY), Turndown control method for membrane separation systems.
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