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A method of epitaxially growing a SiC layer on a single crystal SiC substrate is described. The method includes heating a single-crystal SiC substrate to a first temperature of at least 1400° C. in a chamber, introducing a carrier gas, a silicon containing gas and carbon containing gas into the cham

A method of epitaxially growing a SiC layer on a single crystal SiC substrate is described. The method includes heating a single-crystal SiC substrate to a first temperature of at least 1400° C. in a chamber, introducing a carrier gas, a silicon containing gas and carbon containing gas into the chamber; and epitaxially growing a layer of SiC on a surface of the SiC substrate. The SiC substrate is heated to the first temperature at a rate of at least 30° C./minute. The surface of the SiC substrate is inclined at an angle of from 1° to 3° with respect to a basal plane of the substrate material.

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1. A method comprising: heating a single-crystal SiC substrate to a first temperature of at least 1400° C. in a chamber;introducing a carrier gas, a silicon containing gas and carbon containing gas into the chamber; andepitaxially growing a layer of SiC on a surface of the SiC substrate;wherein the

1. A method comprising: heating a single-crystal SiC substrate to a first temperature of at least 1400° C. in a chamber;introducing a carrier gas, a silicon containing gas and carbon containing gas into the chamber; andepitaxially growing a layer of SiC on a surface of the SiC substrate;wherein the SiC substrate is heated to the first temperature at a rate of at least 30° C/minute; andwherein the surface of the SiC substrate is inclined at an angle of from 1° to 3° with respect to a basal plane of the substrate material. 2. The method of claim 1, wherein the first temperature is 1570 to 1575° C. 3. The method of claim 1, wherein the carrier gas is H2, the silicon containing gas is SiH4 and wherein the carbon containing gas is C3H8. 4. The method of claim 3, wherein the H2 gas is introduced into the chamber at a flow rate of 50-75 slm, the SiH4 gas is introduced into the chamber at a flow rate of 30-40 sccm and the C3H8 is introduced into the chamber at a flow rate of 15-20 sccm. 5. The method of claim 1, wherein HC1 gas is introduced into the chamber during epitaxial growth. 6. The method of claim 1, wherein the pressure in the chamber during epitaxial growth is 90 to 110 mbar. 7. The method of claim 1, wherein the surface of the SiC substrate is inclined at an angle of from 1° to 3° with respect to the (0001) plane of the substrate material. 8. The method of claim 1, wherein the substrate is a 4H SiC substrate. 9. The method of claim 7, wherein the surface of the SiC substrate is inclined at an angle of from 1° to 3° towards one of the directions with respect to the (0001) plane of the substrate material. 10. The method of claim 1, wherein the silicon containing gas and the carbon containing gas are introduced into the chamber such that the atomic ratio of carbon to silicon in the chamber during epitaxial growth is from 1.4 to 1.6. 11. The method of claim 1, wherein the total defect count for the substrate and epitaxially grown layer is <40 cm−2. 12. The method of claim 1, wherein the average surface roughness of the epitaxially grown layer as measured in an optical profilometer is 15 Angstroms or less. 13. The method of claim 1, further comprising epitaxially growing one or more additional layers of SiC on the layer of SiC epitaxially grown on the SiC substrate. 14. The method of claim 1, wherein the silicon containing gas and the carbon containing gas are each introduced into the chamber at a constant flow rate during epitaxial growth and wherein the constant flow rate of the silicon containing gas and the carbon containing gas is established within 10 minutes of introducing the gases into the chamber. 15. The method of claim 14, wherein the constant flow rate of the silicon containing gas and the carbon containing gas is established within 6 minutes of introducing the gases into the chamber. 16. The method of claim 1, wherein epitaxially growing the layer of SiC comprises epitaxially growing the layer of SiC at the first temperature. 17. The method of claim 1, wherein epitaxially growing the layer of SiC comprises epitaxially growing the layer of SiC at a temperature in the range of 1560 to 1565° C., 1570 to 1575° C., or 1580 to 1585° C. 18. The method of claim 7, wherein the substrate is a 4H SiC substrate. 19. The method of claim 15, wherein the constant flow rate of the silicon containing gas and the carbon containing gas varies by no more than 5% during epitaxial growth. 20. The method of claim 14, wherein the constant flow rate of the silicon containing gas and the carbon containing gas varies by no more than 5% during epitaxial growth.