IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
|
| 국제특허분류(IPC7판) |
|
| 출원번호 |
US-0281598
(2011-10-26)
|
| 등록번호 |
US-8598014
(2013-12-03)
|
| 우선권정보 |
DE-102 03 795 (2002-01-31); DE-102 43 757 (2002-09-20) |
|
발명자
/ 주소 |
- Fehrer, Michael
- Hahn, Berthold
- Härle, Volker
- Kaiser, Stephan
- Otte, Frank
- Plössl, Andreas
|
| 출원인 / 주소 |
- OSRAM Opto Semiconductors GmbH
|
| 대리인 / 주소 |
|
| 인용정보 |
피인용 횟수 :
0 인용 특허 :
31 |
초록
▼
Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semicon
Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.
대표청구항
▼
1. A method for producing an optoelectronic component, in which a semiconductor layer based on a III-V-compound semiconductor material is separated from a substrate by irradiation with a laser beam, wherein individual regions of the semiconductor layer are irradiated successively such that each regi
1. A method for producing an optoelectronic component, in which a semiconductor layer based on a III-V-compound semiconductor material is separated from a substrate by irradiation with a laser beam, wherein individual regions of the semiconductor layer are irradiated successively such that each region is radiated in a single radiation step and said regions are arranged in rows and columns before irradiation or during irradiation. 2. The method of claim 1, wherein each single radiation step corresponds to a single laser pulse. 3. The method of claim 1, wherein the laser beam has a plateau-like spatial beam profile. 4. The method as claimed in claim 1, wherein the laser beam has a rectangular or trapezoidal spatial beam profile. 5. The method as claimed in claim 1, wherein the wavelength of the laser beam lies between 200 nm and 400 nm. 6. The method as claimed in claim 1, wherein the laser beam is focused onto the semiconductor layer in such a way that, within the irradiated region, the energy density generated by the laser beam lies between 100 mJ/cm2 and 1000 mJ/cm2, in particular between 150 mJ/cm2 and 800 mJ/cm2. 7. The method as claimed in claim 1, wherein the individual regions are arranged in area-filling fashion such that a spatially approximately constant intensity distribution results, in a manner integrated with respect to time, for a predominant part of the irradiated semiconductor layer. 8. The method as claimed in claim 1, wherein the laser beam has, at the location of the semiconductor layer, a beam area with a longitudinal dimension (a) and a transverse dimension (b), the longitudinal dimension (a) being greater than the transverse dimension (b) and the semiconductor layer is moved relative to the laser beam during the irradiation along the direction of the transverse dimension (b). 9. The method as claimed in claim 1, wherein the substrate is at least partly transmissive to the laser beam and the semiconductor layer is irradiated through the substrate. 10. The method as claimed claim 1, wherein prior to separation from the substrate, the semiconductor layer is applied, preferably soldered, onto a carrier by the side remote from the substrate. 11. The method as claimed in claim 10, wherein the thermal expansion coefficient of the carrier aT is chosen in a manner coordinated with the beam profile and/or the pulse length of the laser beam pulses and with the thermal expansion coefficient of the semiconductor layer aHL and the thermal expansion coefficient as of the substrate, in order to reduce strains between substrate, semiconductor layer and carrier during production. 12. The method as claimed in claim 11, wherein the thermal expansion coefficient of the carrier aT is chosen to be nearer to the thermal expansion coefficient of the semiconductor layer aHL than to the thermal expansion coefficient as of the substrate. 13. The method as claimed in claim 11, wherein the thermal expansion coefficient of the carrier aT differs from the thermal expansion coefficient aS of the substrate by 45% or less, preferably by 40% or less. 14. The method as claimed in claim 11, wherein the thermal expansion coefficient of the carrier aT differs from the thermal expansion coefficient aHL, of the semiconductor layer by 35% or less, preferably by 25% or less. 15. The method as claimed in claim 11, wherein the carrier—has a thermal expansion coefficient of between approximately 4.3*10−6K−1 and approximately 5.9*10−6K−1, preferably between approximately 4.6*10−6K−1 and approximately 5.3*10−6K−1. 16. The method as claimed in claim 11, wherein the carrier contains at least one of the following materials: gallium arsenide, silicon, copper, iron, nickel, cobalt, molybdenum, tungsten, germanium. 17. The method as claimed in claim 11, wherein a large pulse length of the laser beam pulses, in particular a pulse length of greater than 15 ns, is chosen for the separation of the semiconductor layer from the substrate. 18. The method as claimed in claim 11, wherein the thermal expansion coefficient of the carrier aT differs from the thermal expansion coefficient aHL of the semiconductor layer by 35% or more, and in which a small pulse length of the laser beam pulses, in particular a pulse length of less than approximately 15 ns, is chosen for the separation of the semiconductor layer from the substrate. 19. The method as claimed in claim 11, wherein the semiconductor layer is soldered onto the carrier by means of a solder containing gold and/or tin or palladium and/or indium. 20. The method as claimed in claim 11, wherein, before the semiconductor layer is connected to the carrier, a metallization is applied to that side of the semiconductor layer which is remote from the substrate. 21. The method as claimed in claim 20, wherein the metallization contains gold and/or platinum. 22. The method as claimed in claims 1, wherein the III-V compound semiconductor material is a nitride compound semiconductor material. 23. The method as claimed in claim 1, wherein the substrate contains at least one of the following materials: silicon, silicon carbide, aluminium oxide, sapphire. 24. The method as claimed in claim 1, wherein the semiconductor layer is epitaxially grown on the substrate. 25. The method as claimed in claim 1, wherein the semiconductor layer has a thickness which is less than or equal to 50 μm. 26. The method as claimed in claim 1, wherein the semiconductor component is a light emitting diode. 27. The method as claimed in claim 1, wherein a interface region between semiconductor layer and substrate is irradiated in such a way that the radiation energy is absorbed at said interface region, said absorption of radiation energy leading to a material decomposition within the semiconductor layer.
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