IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0263170
(2008-10-31)
|
등록번호 |
US-8599528
(2013-12-03)
|
발명자
/ 주소 |
- Bartel, Karl C.
- Penwell, Chris
|
출원인 / 주소 |
- Transtector Systems, Inc.
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
0 인용 특허 :
97 |
초록
▼
A surge protection circuit to reduce capacitance inherent of standard diode packaging and to improve voltage clamping reaction speeds under high surge conditions. The surge protection circuit has a coil having a first end and a second end and a diode cell having a top layer, a center diode junction,
A surge protection circuit to reduce capacitance inherent of standard diode packaging and to improve voltage clamping reaction speeds under high surge conditions. The surge protection circuit has a coil having a first end and a second end and a diode cell having a top layer, a center diode junction, and a bottom layer. The top layer is directly connected to the second end of the coil and the bottom layer is directly connected to a ground. The diode cell has no wire leads.
대표청구항
▼
1. A surge protection circuit to reduce capacitance inherent of standard diode packaging and to improve voltage clamping reaction speeds under high surge conditions, the surge protection circuit comprising: a housing;a cavity defined by the housing;a signal path for propagating DC currents and RF si
1. A surge protection circuit to reduce capacitance inherent of standard diode packaging and to improve voltage clamping reaction speeds under high surge conditions, the surge protection circuit comprising: a housing;a cavity defined by the housing;a signal path for propagating DC currents and RF signals, the signal path including: a first port for receiving the DC currents and the RF signals;a foil positioned within the cavity and having a first plate connected to the first port, a second plate and a third plate connecting the first plate to the second plate; anda second port for transmitting the DC currents and the RF signals, the second port being directly connected to the second plate of the foil,wherein the signal path is not directly connected to any capacitor or any diode, for minimizing attenuation of the DC currents and the RF signals; anda surge path including: the first port;a coil positioned within the cavity, the coil having a first end connected to the first port, and a second end; anda diode cell having a top layer, a center diode junction, and a bottom layer, the top layer directly connected to the second end of the coil and the bottom layer directly connected to a ground, wherein the diode cell has no wire leads. 2. The surge protection circuit of claim 1 wherein the first port is an N-type connector and the second port is a SMA-type connector and wherein the first plate has a smaller length than the second plate. 3. The surge protection circuit of claim 1 wherein the first plate is positioned substantially parallel to the second plate, and the third plate has a substantially curved shape, and the first plate, the second plate and the third plate form an integral member, the integral member having a substantially flat surface, a length, a width and a thickness, each of the length and the width of the integral member being substantially greater than the thickness of the integral member. 4. The surge protection circuit of claim 3 wherein the foil is made of a copper material that is formed in the shape of a U or a backwards U. 5. The surge protection circuit of claim 1 further comprising a capacitor connected in parallel configuration with the diode cell. 6. The surge protection circuit of claim 1 wherein the diode cell includes a plurality of diodes stacked in a series configuration. 7. The surge protection circuit of claim 1 wherein the diode cell is a bi-directional, high current transient voltage suppressor diode having a breakdown voltage of between about 5 volts and about 150 volts and a peak pulse power rating of up to 30,000 watts. 8. The surge protection circuit of claim 1 wherein the first plate of the foil is positioned substantially parallel to the second plate of the foil and the foil is configured to pass the DC currents and the RF signals. 9. The surge protection circuit of claim 1 wherein the foil is made of a copper material that is formed in the shape of a U or a backwards U. 10. The surge protection circuit of claim 1 wherein the first plate, the second plate and the third plate of the foil are formed as a single integral member. 11. A surge protection device comprising: a housing;a cavity defined by the housing;a signal path for propagating DC currents and RF signals, the signal path including: a first port positioned within the cavity for receiving the DC currents and the RF signals;a foil positioned within the cavity, the foil having: a first plate connected to the first port using a first conductive connection having a first length,a second plate positioned at a first distance from the first plate, anda third plate connecting the first plate to the second plate, the third plate being spaced apart from the housing, thereby creating a capacitive effect between the foil and the housing;a second port for transmitting the DC currents and the RF signals, the second port being directly connected to the second plate of the foil using a second conductive connection having a second length;a surge path including: the first port;a coil positioned within the cavity, the coil having a first end connected to the first port, and a second end; anda diode cell having a top layer, a center diode junction, and a bottom layer, the top layer directly connected to the second end of the coil and the bottom layer directly connected to a ground,wherein the signal path is not directly connected to any capacitor or any diode, for reducing attenuation of the DC currents and the RF signal. 12. The surge protection device of claim 11 wherein the foil is made of a copper material that is formed in the shape of a U or a backwards U, and the first plate, the second plate and the third plate form an integral member, the integral member having a substantially flat surface, a length, a width and a thickness, each of the length and the width of the integral member being substantially greater than the thickness of the integral member. 13. The surge protection device of claim 11 further comprising a capacitor connected in parallel configuration with the diode cell. 14. The surge protection device of claim 11 wherein the diode cell includes a plurality of diodes stacked in a series configuration. 15. The surge protection device of claim 11 wherein the diode cell is a bi-directional, high current transient voltage suppressor diode having a breakdown voltage of between about 5 volts and about 150 volts and a peak pulse power rating of up to 30,000 watts. 16. A surge protection device comprising: a housing;a cavity defined by the housing;a diode positioned within the cavity;a signal path for propagating DC currents and RF signals, the signal path including a first port for receiving the DC currents and the RF signals and a second port for transmitting the DC currents and the RF signals, wherein the signal path is not directly connected to any capacitor or any diode, for reducing attenuation of the DC currents and the RF signals;a foil positioned within the cavity, the foil having a first plate connected to the first port, a second plate connected to the second port, and a third curved plate connecting the first plate to the second plate, the foil being spaced apart from the housing, thereby creating a capacitive effect between the foil and the housing; andan inductor positioned within the cavity, the inductor having a first end connected to the first port and a second end connected to the diode. 17. The surge protection device of claim 16 wherein the foil is made of a copper material that is formed in the shape of a U or a backwards U. 18. The surge protection device of claim 16 further comprising a capacitor connected in parallel configuration with the diode. 19. The surge protection device of claim 16 wherein the diode includes a plurality of diodes stacked in a series configuration. 20. The surge protection device of claim 16 wherein the diode is a diode cell having a top layer, a center diode junction, and a bottom layer, the top layer directly connected to the second end of the inductor and the bottom layer directly connected to the housing.
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