IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
|
| 국제특허분류(IPC7판) |
|
| 출원번호 |
US-0092174
(2011-04-22)
|
| 등록번호 |
US-8602290
(2013-12-10)
|
|
발명자
/ 주소 |
- Hippensteel, Gregory M.
- Peek, Lawrence F.
- Anderson, Jeffrey P.
- Gorhe, Devendra
- Allen, Steve M.
- Scrafton, Joel G.
- Harmon, Casey
|
| 출원인 / 주소 |
|
| 대리인 / 주소 |
Schwegman Lundberg & Woessner, P.A.
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| 인용정보 |
피인용 횟수 :
0 인용 특허 :
126 |
초록
▼
A method for bonding a porous tantalum structure to a substrate is provided. The method comprises providing a substrate comprising cobalt or a cobalt-chromium alloy; an interlayer consisting essentially of at least one of hafnium, manganese, niobium, palladium, zirconium, titanium, or alloys or comb
A method for bonding a porous tantalum structure to a substrate is provided. The method comprises providing a substrate comprising cobalt or a cobalt-chromium alloy; an interlayer consisting essentially of at least one of hafnium, manganese, niobium, palladium, zirconium, titanium, or alloys or combinations thereof; and a porous tantalum structure. Heat and pressure are applied to the substrate, the interlayer, and the porous tantalum structure to achieve solid-state diffusion between the substrate and the interlayer and between the interlayer and the porous tantalum structure.
대표청구항
▼
1. A method for bonding a porous tantalum structure to a substrate, comprising: providing a substrate comprising cobalt or a cobalt-chromium alloy;providing a porous tantalum structure;applying an interlayer consisting essentially of at least one of hafnium, manganese, niobium, palladium, zirconium,
1. A method for bonding a porous tantalum structure to a substrate, comprising: providing a substrate comprising cobalt or a cobalt-chromium alloy;providing a porous tantalum structure;applying an interlayer consisting essentially of at least one of hafnium, manganese, niobium, palladium, zirconium, titanium, or alloys or combinations thereof to a surface of the porous tantalum structure, wherein the interlayer is applied to the surface by at least one of thermal spraying, plasma spraying, electron beam deposition, laser deposition, chemical vapor deposition, or electrodeposition;positioning the substrate in contact with the interlayer thereby forming an assembly, wherein the interlayer is between the substrate and the porous tantalum structure; andapplying heat and pressure to the assembly for a time sufficient to concurrently achieve solid-state diffusion between the substrate and the interlayer and solid-state diffusion between the interlayer and the porous tantalum structure. 2. The method of claim 1, wherein the interlayer is at least about 0.020 inches thick. 3. The method of claim 1, wherein the interlayer is at least about 0.010 inches thick. 4. The method of claim 1, wherein the interlayer has a porosity of between about 20% and about 40%. 5. The method of claim 1, wherein applying the interlayer includes plasma spraying the interlayer onto the surface in at least a partial vacuum. 6. The method of claim 1, wherein applying pressure includes applying at least approximately 200 psi to the assembly. 7. The method of claim 1, wherein said interlayer has a top surface and a bottom surface, and wherein said applying heat and pressure to the assembly achieves solid-state diffusion between the substrate and the bottom surface of the interlayer and solid-state diffusion between the top surface of the interlayer and the porous tantalum structure. 8. The method of claim 1, wherein applying heat includes heating the assembly to less than about 1000° C. in a vacuum environment. 9. The method of claim 1, wherein the interlayer has a thickness of at least about 0.010 inches and applying heat and pressure includes applying a pressure of at least about 200 psi and heating the assembly to at least about 540° C. for at least one hour to achieve solid-state diffusion between the substrate and the interlayer and between the interlayer and the porous tantalum structure.
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