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In various embodiments, an array of discrete solar cells with associated devices such as bypass diodes is formed over a single substrate. In one instance, a method of forming a solar-cell array with integrated bypass diodes comprising: providing a semiconductor substrate, a first cell comprising a S

In various embodiments, an array of discrete solar cells with associated devices such as bypass diodes is formed over a single substrate. In one instance, a method of forming a solar-cell array with integrated bypass diodes comprising: providing a semiconductor substrate, a first cell comprising a SiGe p-n junction or SiGe p-i-n junction, one or more second cells each comprising a III-V semiconductor p-n junction or III-V semiconductor p-i-n junction; forming a bypass diode that is discrete and laterally separate from its associated solar cell and comprises an unremoved portion of the first cell, the formation comprising removing an unremoved portion of the one or more second cells thereover.

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1. A method of forming a solar-cell array with integrated bypass diodes, the method comprising: providing a structure comprising: a semiconductor substrate,disposed over the substrate, a first cell comprising a SiGe p-n junction or SiGe p-i-n junction, anddisposed over the first cell, one or more se

1. A method of forming a solar-cell array with integrated bypass diodes, the method comprising: providing a structure comprising: a semiconductor substrate,disposed over the substrate, a first cell comprising a SiGe p-n junction or SiGe p-i-n junction, anddisposed over the first cell, one or more second cells each comprising a III-V-semiconductor p-n junction or III-V-semiconductor p-i-n junction;forming over a top surface of the substrate a plurality of discrete solar cells at least in part by removing portions of the first cell and the one or more second cells to form the discrete solar cells and regions therebetween that do not produce electrical current under solar illumination, each of the discrete solar cells being a multi junction solar cell incorporating, in series, an unremoved portion of the first cell and an unremoved portion of the one or more second cells;forming, associated with each of the discrete solar cells, a bypass diode that (i) is discrete and laterally separate from its associated solar cell and (ii) comprises an unremoved portion of the first cell, the formation comprising removing an unremoved portion of the one or more second cells thereover;electrically connecting each bypass diode with its associated discrete solar cell such that the bypass diode and the discrete solar cell have opposite polarities; andelectrically connecting, on the substrate, a plurality of the discrete solar cells in series, thereby forming a series string of discrete solar cells for supplying, under solar illumination, a voltage larger than a voltage produced by any of the discrete solar cells individually. 2. The method of claim 1, wherein the structure comprises an isolation diode disposed beneath the first cell, the isolation diode comprising a p-n junction or a p-i-n junction having a polarity opposite a polarity of the first cell. 3. The method of claim 2, wherein the isolation diode comprises SiGe having a bandgap smaller than a bandgap of the first cell. 4. The method of claim 2, wherein the structure comprises a graded-composition layer disposed beneath the first cell, the graded-composition layer relieving at least a portion of a lattice-mismatch strain between the substrate and the first cell. 5. The method of claim 4, wherein (i) a first portion of the graded-composition layer comprises SiGe and is disposed between the substrate and the isolation diode and (ii) a second portion of the graded-composition layer comprises SiGe and is disposed between the isolation diode and the first cell, the first portion grading from an initial Ge content to an intermediate Ge content larger than the initial Ge content and the second portion grading from approximately the intermediate Ge content to a final Ge content larger than the intermediate Ge content. 6. The method of claim 5, wherein the structure comprises a constant-composition SiGe layer disposed between the first and second portions of the graded-composition layer, the constant-composition layer having a Ge content approximately equal to the intermediate Ge content. 7. The method of claim 1, wherein the structure comprises a silicon cap layer disposed over the one or more second cells. 8. The method of claim 7, wherein forming the plurality of discrete solar cells comprises, for each solar cell, forming a first contact to the cap layer and forming a second contact to a layer disposed beneath the first cell, each of the first and second contacts being formed over the top surface of the substrate. 9. The method of claim 8, wherein forming the first and second contacts comprises substantially simultaneously reacting a metal with a portion of the cap layer and a portion of the layer disposed beneath the first cell, the first contact comprising a silicide of the metal and the second contact comprising a germanosilicide of the metal. 10. The method of claim 1, wherein forming the bypass diodes comprises, for each bypass diode, forming a first contact to a top surface of the first cell and a second contact to a layer disposed beneath the first cell, each of the first and second contacts being formed over the top surface of the substrate. 11. The method of claim 10, wherein forming the first and second contacts comprises substantially simultaneously reacting a metal with a portion of the first cell and a portion of the layer disposed beneath the first cell, each of the first and second contacts comprising a germanosilicide of the metal. 12. The method of claim 10, wherein the first contact covers substantially all of a top surface of the first cell of the bypass diode, thereby substantially preventing solar illumination thereof. 13. The method of claim 1, further comprising: forming at least one additional series string of discrete solar cells on the substrate; andelectrically connecting the series string and the at least one additional series string in parallel. 14. The method of claim 1, wherein forming the series string comprises forming interconnection circuitry on the substrate between each of the plurality of discrete solar cells. 15. The method of claim 14, wherein the interconnection circuitry between at least two of the discrete solar cells comprises a switching element enabling reconfiguration of the electrical connection between the at least two discrete solar cells. 16. The method of claim 14, wherein the interconnection circuitry between each of the discrete solar cells comprises a switching element enabling reconfiguration of all of the electrical connections between the discrete solar cells. 17. The method of claim 1, further comprising forming over the top surface of the substrate and electrically connecting to the series string, circuitry for maximum power-point tracking, the circuitry comprising a DC/DC converter. 18. The method of claim 17, further comprising electrically connecting the circuitry to a charge-storage element not disposed over the top surface of the substrate. 19. The method of claim 18, wherein the charge-storage element is disposed under a bottom surface of the substrate opposite the top surface.