IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
|
| 국제특허분류(IPC7판) |
|
| 출원번호 |
US-0722789
(2010-03-12)
|
| 등록번호 |
US-8610108
(2013-12-17)
|
| 우선권정보 |
JP-2001-187351 (2001-06-20); JP-2001-270694 (2001-09-06) |
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발명자
/ 주소 |
- Yamazaki, Shunpei
- Takayama, Toru
|
| 출원인 / 주소 |
- Semiconductor Energy Laboratory Co., Ltd.
|
| 대리인 / 주소 |
|
| 인용정보 |
피인용 횟수 :
0 인용 특허 :
113 |
초록
▼
A light emitting device which is capable of suppressing deterioration by diffusion of impurities such as moisture, oxygen, alkaline metal and alkaline earth metal, and concretely, a flexible light emitting device which has light emitting element formed on a plastic substrate. On the plastic substrat
A light emitting device which is capable of suppressing deterioration by diffusion of impurities such as moisture, oxygen, alkaline metal and alkaline earth metal, and concretely, a flexible light emitting device which has light emitting element formed on a plastic substrate. On the plastic substrate, disposed are two layers and more of barrier films comprising a layer represented by AlNxOy which is capable of blocking intrusion of moisture and oxygen in a light emitting layer and blocking intrusion of impurities such as an alkaline metal and an alkaline earth metal in an active layer of TFT, and further, a stress relaxation film containing resin is disposed between two layers of barrier films.
대표청구항
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1. A light emitting device comprising: a first substrate;a first insulating layer over the first substrate;a second insulating layer over the first insulating layer;a first transistor over the second insulating layer;a driver circuit comprising a second transistor over the second insulating layer;a
1. A light emitting device comprising: a first substrate;a first insulating layer over the first substrate;a second insulating layer over the first insulating layer;a first transistor over the second insulating layer;a driver circuit comprising a second transistor over the second insulating layer;a third insulating layer over the driver circuit and the first transistor;a light emitting element over the third insulating layer, and comprising: a first electrode electrically connected to the first transistor, wherein an end portion of the first electrode is covered with a bank;an organic compound layer over the first electrode; anda second electrode over the organic compound layer,an organic material layer over and in direct contact with the second electrode; anda second substrate over the organic material layer with a space interposed between the second substrate and the organic material layer,wherein the second electrode covers an end portion of the bank. 2. The light emitting device according to claim 1, wherein the light emitting element is covered by a third layer comprising Al, N and O. 3. The light emitting device according to claim 1, further comprising a first layer comprising Al, N and O over the first substrate, and a second layer comprising Al, N and O over the first layer comprising Al, N and O, wherein at least one of the first layer comprising Al, N and O and the second layer comprising Al, N and O contains nitrogen of 2.5 atm % to 47.5 atm %. 4. The light emitting device according to claim 1, further comprising a first layer comprising Al, N and O over the first substrate, and a second layer comprising Al, N and O over the first layer comprising Al, N and O, wherein at least one of the first layer comprising Al, N and O and the second layer comprising Al, N and O contains a 13 group element or a 15 group element of 0.1 atm % to 5 atm % as impurities. 5. The light emitting device according to claim 1, further comprising a first layer comprising Al, N and O over the first substrate, and a second layer comprising Al, N and O over the first layer comprising Al, N and O, wherein at least one of the first layer comprising Al, N and O and the second layer comprising Al, N and O contains a phosphorous element or boron element of 0.1 atm % to 5 atm %. 6. The light emitting device according to claim 1, wherein at least one of the first substrate and the second substrate comprises at least one of polyethylene terephthalate (PET), polyether sulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyether ether ketone (PEEK), polysulfone (PSF), polyether imide (PEI), polyarylate (PAR), polybutylene terephthalate (PBT), and polyimide. 7. The light emitting device according to claim 1, wherein each of the first transistor and the second transistor comprises a semiconductor film comprising an amorphous silicon film or a polysilicon film. 8. The light emitting device according to claim 1, wherein the second electrode comprises ITO. 9. The light emitting device according to claim 1, wherein the organic material layer comprises organic resin. 10. The light emitting device according to claim 1, further comprising a layer comprising an organic resin in contact with an end portion of the second substrate. 11. The light emitting device according to claim 1, wherein the organic material layer is in contact with an end portion of the second electrode. 12. A light emitting device comprising: a first substrate;a first insulating layer over the first substrate;a second insulating layer over the first insulating layer;a first transistor over the second insulating layer;a driver circuit comprising a second transistor over the second insulating layer;a third insulating layer over the driver circuit and the first transistor;a light emitting element over the third insulating layer, and comprising: a first electrode electrically connected to the first transistor;an organic compound layer over the first electrode; anda second electrode over the organic compound layer;an organic material layer over and in direct contact with the second electrode, wherein the organic material layer overlaps with the second transistor;a second substrate over the organic material layer with a space interposed between the second substrate and the organic material layer. 13. The light emitting device according to claim 12, further comprising a layer comprising Al, N and O over the first substrate wherein the layer comprising Al, N and O contains nitrogen of 2.5 atm % to 47.5 atm %. 14. The light emitting device according to claim 12, further comprising a layer comprising Al, N and O over the first substrate, wherein the layer comprising Al, N and O contains a 13 group element or a 15 group element of 0.1 atm % to 5 atm % as impurities. 15. The light emitting device according to claim 12, further comprising a layer comprising Al, N and O over the first substrate, wherein the layer comprising Al, N and O contains a phosphorous element or boron element of 0.1 atm % to 5 atm %. 16. The light emitting device according to claim 12, wherein at least one of the first substrate and the second substrate comprises at least one of polyethylene terephthalate (PET), polyether sulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyether ether ketone (PEEK), polysulfone (PSF), polyether imide (PEI), polyarylate (PAR), polybutylene terephthalate (PBT), and polyimide. 17. The light emitting device according to claim 12, wherein each of the first transistor and the second transistor comprises a semiconductor film comprising an amorphous silicon film or a polysilicon film. 18. The light emitting device according to claim 12, wherein the second electrode comprises ITO. 19. The light emitting device according to claim 12, wherein the organic material layer comprises organic resin. 20. The light emitting device according to claim 12, wherein an end portion of the first electrode is covered by a bank. 21. The light emitting device according to claim 12, further comprising a layer comprising an organic resin in contact with an end portion of the second substrate. 22. The light emitting device according to claim 12, wherein the organic material layer is in contact with an end portion of the second electrode. 23. A light emitting device comprising: a first substrate;a first insulating layer over the first substrate;a second insulating layer over the first insulating layer;a first transistor over the second insulating layer;a driver circuit comprising a second transistor over the second insulating layer;a third insulating layer over the driver circuit and the first transistor;a light emitting element over the third insulating layer, and comprising: a first electrode electrically connected to the first transistor;an organic compound layer over the first electrode; anda second electrode over the organic compound layer, wherein the second electrode overlaps with the second transistor,an organic material layer over and in direct contact with the second electrode; anda second substrate over the organic material layer with a space interposed between the second substrate and the organic material layer. 24. The light emitting device according to claim 23, further comprising a first layer comprising Al, N and O over the first substrate, and a second layer comprising Al, N and O over the first layer comprising Al, N and O, wherein at least one of the first layer comprising Al, N and O, and the second layer comprising Al, N and O contains nitrogen of 2.5 atm % to 47.5 atm %. 25. The light emitting device according to claim 23, further comprising a first layer comprising Al, N and O over the first substrate, and a second layer comprising Al, N and O over the first layer comprising Al, N and O, wherein at least one of the first layer comprising Al, N and O, and the second layer comprising Al, N and O contains a 13 group element or a 15 group element of 0.1 atm % to 5 atm % as impurities. 26. The light emitting device according to claim 23, further comprising a first layer comprising Al, N and O over the first substrate, and a second layer comprising Al, N and O over the first layer comprising Al, N and O, wherein at least one of the first layer comprising Al, N and O, and the second layer comprising Al, N and O contains a phosphorous element or boron element of 0.1 atm % to 5 atm %. 27. The light emitting device according to claim 23, wherein at least one of the first substrate and the second substrate comprises at least one of polyethylene terephthalate (PET), polyether sulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyether ether ketone (PEEK), polysulfone (PSF), polyether imide (PEI), polyarylate (PAR), polybutylene terephthalate (PBT), and polyimide. 28. The light emitting device according to claim 23, wherein each of the first transistor and the second transistor comprises a semiconductor film comprising an amorphous silicon film or a polysilicon film. 29. The light emitting device according to claim 23, wherein the second electrode comprises ITO. 30. The light emitting device according to claim 23, wherein the organic material layer comprises organic resin. 31. The light emitting device according to claim 23, wherein an end portion of the first electrode is covered by a bank. 32. The light emitting device according to claim 23, further comprising a layer comprising an organic resin in contact with an end portion of the second substrate. 33. The light emitting device according to claim 23, wherein the organic material layer is in contact with an end portion of the second electrode.
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